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Procedure to derive analytical models for microwave noise performances of Si SiGe:C and InP InGaAs heterojunction bipolar transistors

Semiconductor science and technology, 2013-04, Vol.28 (4), p.45003

2013

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Analysis of Electromagnetic Propagation from MHz to THz with a Memory-Optimised CPML-FDTD Algorithm

International journal of antennas and propagation, 2018-01, Vol.2018, p.1-20

2018

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Development and characterization of cyclic olefin copolymer thin films and their dielectric characteristics as CPW substrate by means of Terahertz Time Domain Spectroscopy

Microelectronic engineering, 2018-05, Vol.191, p.84-90

2018

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Influence of temperature on transit times and microwave noise performances of SiGe HBT

Semiconductor science and technology, 2016-03, Vol.31 (3), p.35020

2016

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A new proposal to convertnear-field into far-field for parabolic reflectors

Microwave and optical technology letters, 2016-07, Vol.58 (7), p.1595-1599

2016

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Structure and mechanism formation of polyelectrolyte complex obtained from PSS/PAH system: effect of molar mixing ratio, base–acid conditions, and ionic strength

Colloid and polymer science, 2013-03, Vol.291 (3), p.683-690

2013

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Experimental and modelling investigation of the influence of noise transit time and self-heating on microwave noise of Si SiGe:C and InP InGaAs HBTs

Semiconductor science and technology, 2012-06, Vol.27 (6), p.65016

2012

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Apparent base resistance decomposition by means of small-signal and high-frequency noise analyses of submicron InP InGaAs HBTs

Semiconductor science and technology, 2012-08, Vol.27 (8), p.85005

2012

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Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

Semiconductor science and technology, 2014-09, Vol.29 (9), p.95020

2014

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SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time

Solid-state electronics, 2011-07, Vol.61 (1), p.58-64

2011

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SiGe heterojunction bipolar transistor issues towards high cryogenic performances

Cryogenics (Guildford), 2009-11, Vol.49 (11), p.620-625

2009

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DC Current-crowding estimation for SiGe:C heterojunction bipolar transistors

Solid-state electronics, 2019-03, Vol.153, p.1-7

2019

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Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET

Solid-state electronics, 2007-03, Vol.51 (3), p.449-459

2007

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High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

Solid-state electronics, 2003-02, Vol.47 (2), p.283-289

2003

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Strained Si HFETs for microwave applications: state-of-the-art and further approaches

Solid-state electronics, 2004-08, Vol.48 (8), p.1443-1452

2004

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Parametric Analysis of Perfect Matched Layer Model of Finite Difference Time Domain Method

Applied Mechanics and Materials, 2009-08, Vol.15, p.139-144

2009

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Gate Length Scaling in High fMAX Si/SiGe n-MODFET

32nd European Solid-State Device Research Conference, 2002, p.167-170

2002

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Structure and mechanism formation of polyelectrolyte complex obtained from PSS/PAH system: effect of molar mixing ratio, baseaacid conditions, and ionic strength

Colloid and polymer science, 2013-03, Vol.291 (3), p.683-690

2013

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Near field analysis and field transformation applied to a parabolic profile at 5GHz

Revista mexicana de física, 2019-05, Vol.65 (3 May-Jun), p.268-273

2019

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Use of the perfect electric conductor boundary conditions to discretize a diffractor in FDTD/PML environment

Revista mexicana de física, 2015-10, Vol.61 (5), p.344-350

2015

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Microwave noise sources contributions to SiGe: C/Si and InP/InGaAs HBT's performances

Revista mexicana de física, 2013-04, Vol.59 (2), p.148-152

2013

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Full comparison between analytical results, electrical modeling and measurements for the noise behavior of a SiGe HBT

2010 IEEE ANDESCON, 2010, p.1-5

2010

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Modeling high-frequency noise behavior in a SiGe Heterojunction Bipolar Transistor for different bias

2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC 2011), 2011, p.901-904

2011

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DC and high frequency performance of 0.1 µm n-type Si/Si^sub 0.6^Ge^sub 0.4^ MODFET with f^sub MAX^ = 188 GHz at 300K and f^sub MAX^ = 230 GHz at 50K

Electronics letters, 2003-01, Vol.39 (1), p.1

2003

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DC and high frequency performance of 0.1 [micro sign]m n-type Si∕Si0.6Ge0.4 MODFET with fMAX=188 GHz at 300K and fMAX=230 GHz at 50K

Electronics letters, 2003, Vol.39 (1), p.149

2003

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Procedure to derive analytical models for microwave noise performances of Si SiGe:C and InP InGaAs heterojunction bipolar transistors

Analysis of Electromagnetic Propagation from MHz to THz with a Memory-Optimised CPML-FDTD Algorithm

Development and characterization of cyclic olefin copolymer thin films and their dielectric characteristics as CPW substrate by means of Terahertz Time Domain Spectroscopy

Influence of temperature on transit times and microwave noise performances of SiGe HBT

A new proposal to convertnear-field into far-field for parabolic reflectors

Structure and mechanism formation of polyelectrolyte complex obtained from PSS/PAH system: effect of molar mixing ratio, base–acid conditions, and ionic strength

Experimental and modelling investigation of the influence of noise transit time and self-heating on microwave noise of Si SiGe:C and InP InGaAs HBTs

Apparent base resistance decomposition by means of small-signal and high-frequency noise analyses of submicron InP InGaAs HBTs

Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time

SiGe heterojunction bipolar transistor issues towards high cryogenic performances

DC Current-crowding estimation for SiGe:C heterojunction bipolar transistors

Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET

High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

Strained Si HFETs for microwave applications: state-of-the-art and further approaches

Parametric Analysis of Perfect Matched Layer Model of Finite Difference Time Domain Method

Gate Length Scaling in High fMAX Si/SiGe n-MODFET

Structure and mechanism formation of polyelectrolyte complex obtained from PSS/PAH system: effect of molar mixing ratio, baseaacid conditions, and ionic strength

Near field analysis and field transformation applied to a parabolic profile at 5GHz

Use of the perfect electric conductor boundary conditions to discretize a diffractor in FDTD/PML environment

Microwave noise sources contributions to SiGe: C/Si and InP/InGaAs HBT's performances

Full comparison between analytical results, electrical modeling and measurements for the noise behavior of a SiGe HBT

Modeling high-frequency noise behavior in a SiGe Heterojunction Bipolar Transistor for different bias

DC and high frequency performance of 0.1 µm n-type Si/Si^sub 0.6^Ge^sub 0.4^ MODFET with f^sub MAX^ = 188 GHz at 300K and f^sub MAX^ = 230 GHz at 50K

DC and high frequency performance of 0.1 [micro sign]m n-type Si∕Si0.6Ge0.4 MODFET with fMAX=188 GHz at 300K and fMAX=230 GHz at 50K

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