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Controlling disorder in the ZnGa2O4:Cr3+ persistent phosphor by Mg2+ substitution

Physical chemistry chemical physics : PCCP, 2017, Vol.19 (2), p.1369-1377

2017

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Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures

Applied physics letters, 2008-02, Vol.92 (6), p.062505-062505-3

2008

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Investigation of inorganic compounds on the surface of cathode materials using Li and O K-edge XANES

Journal of power sources, 2007-12, Vol.174 (2), p.774-778

2007

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Stabilization of temperature dependence of band Gap by introducing nitrogen ion into GaInNP alloy

AIP Conference Proceedings, 2013, Vol.1566 (1), p.388

2013

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Rare-earth doped III-nitride semiconductors for semiconductor spintronics

Journal of luminescence, 2012-12, Vol.132 (12), p.3136-3140

2012

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Observation of large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices

Solid state communications, 2012-07, Vol.152 (14), p.1270-1273

2012

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Structural, magnetic and optical studies of ultrathin GaGdN/AlGaN multiquantum well structure

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.737-740

2012

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Role of nitrogen ion on photoluminescence variation observed in III-N-V semiconductors

AIP Conference Proceedings, 2013, Vol.1566 (1), p.92

2013

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Tunnel magnetoresistance in GaCrN∕AlN∕GaCrN ferromagnetic semiconductor tunnel junctions

Applied physics letters, 2006-12, Vol.89 (23)

2006

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Multiple Scattering Approach to GaN:Gd Gd L3-Edge XANES

e-Journal of Surface Science and Nanotechnology, 2012/12/22, Vol.10, pp.661-665

2012

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Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE

Physica status solidi. C, 2011-02, Vol.8 (2), p.491-493

2011

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Characterization of Specific N2-Adsorption Site Existing on CuZSM-5 Type Zeolite: Effect of Ion-Exchange Level on Adsorption Properties

The journal of physical chemistry. B, 1999-03, Vol.103 (12), p.2155-2164

1999

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Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy

Physica status solidi. C, 2011-02, Vol.8 (2), p.497-499

2011

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Co-ordination alignments at the vicinity of the dopant Cr ions in AlN

Physica status solidi. C, 2011-02, Vol.8 (2), p.473-475

2011

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High Gd concentration GaGdN grown at low temperatures

Journal of superconductivity and novel magnetism, 2007-08, Vol.20 (6), p.429-432

2007

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Photoluminescence related to Gd3+:N-vacancy complex in GaN:Gd multi-quantum wells

Journal of alloys and compounds, 2015-04, Vol.628, p.401-406

2015

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Combination of short-range periodicity and interfacial stress effects on valence band scheme in strained MQW (GaN/AlGaN)n

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.1919-1921

2010

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A New Metal-Ion Source with An Electron-Beam Evaporator for Surface Modification

e-Journal of Surface Science and Nanotechnology, 2010/03/13, Vol.8, pp.131-135

2010

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XAFS study on site occupation of cobalt and iron in Z-type ferrite, Ba3Co2-xFe24+xO41

Journal of magnetism and magnetic materials, 2005-03, Vol.288, p.366-373

2005

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Lattice vibrations and the bonding nature of boron carbide

Journal of physics. Condensed matter, 1996-12, Vol.8 (50), p.10919-10929

1996

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Structural characterization of MBE grown InGaGdN/GaN and InGaN/GaGdN structures

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2245-2247

2011

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Investigation on lithium de-intercalation mechanism for Li1-yNi1/3Mn1/3Co1/3O2

Journal of power sources, 2005-08, Vol.146 (1-2), p.640-644

2005

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Controlling disorder in the ZnGa 2 O 4 :Cr 3+ persistent phosphor by Mg 2+ substitution

Physical chemistry chemical physics : PCCP, 2017, Vol.19 (2), p.1369-1377

2017

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Structural and magnetic properties of GaGdN/GaN superlattice structures

Thin solid films, 2010-08, Vol.518 (20), p.5659-5661

2010

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Structural Analysis of Ag–In–Sb–Te Phase-Change Material

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 6A), p.3758-3759

2002

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Controlling disorder in the ZnGa2O4:Cr3+ persistent phosphor by Mg2+ substitution

Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures

Investigation of inorganic compounds on the surface of cathode materials using Li and O K-edge XANES

Stabilization of temperature dependence of band Gap by introducing nitrogen ion into GaInNP alloy

Rare-earth doped III-nitride semiconductors for semiconductor spintronics

Observation of large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices

Structural, magnetic and optical studies of ultrathin GaGdN/AlGaN multiquantum well structure

Role of nitrogen ion on photoluminescence variation observed in III-N-V semiconductors

Tunnel magnetoresistance in GaCrN∕AlN∕GaCrN ferromagnetic semiconductor tunnel junctions

Multiple Scattering Approach to GaN:Gd Gd L3-Edge XANES

Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE

Characterization of Specific N2-Adsorption Site Existing on CuZSM-5 Type Zeolite: Effect of Ion-Exchange Level on Adsorption Properties

Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy

Co-ordination alignments at the vicinity of the dopant Cr ions in AlN

High Gd concentration GaGdN grown at low temperatures

Photoluminescence related to Gd3+:N-vacancy complex in GaN:Gd multi-quantum wells

Combination of short-range periodicity and interfacial stress effects on valence band scheme in strained MQW (GaN/AlGaN)n

A New Metal-Ion Source with An Electron-Beam Evaporator for Surface Modification

XAFS study on site occupation of cobalt and iron in Z-type ferrite, Ba3Co2-xFe24+xO41

Lattice vibrations and the bonding nature of boron carbide

Structural characterization of MBE grown InGaGdN/GaN and InGaN/GaGdN structures

Investigation on lithium de-intercalation mechanism for Li1-yNi1/3Mn1/3Co1/3O2

Controlling disorder in the ZnGa 2 O 4 :Cr 3+ persistent phosphor by Mg 2+ substitution

Structural and magnetic properties of GaGdN/GaN superlattice structures

Structural Analysis of Ag–In–Sb–Te Phase-Change Material

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