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Positron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in n-FZ-Si:P Crystals

Solid state phenomena, 2014, Vol.205-206, p.317-322

2014

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Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals

Materials science forum, 2013, Vol.733, p.224-227

2013

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IR Studies on VON, CIOI and CICS Defects in Ge-Doped Cz-Si

Solid state phenomena, 2011-08, Vol.178-179, p.147-153

2011

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The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures

Solid state phenomena, 2009-10, Vol.156-158, p.123-128

2009

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Electron Mobility in Moderately Doped Si1-xGex

Solid state phenomena, 2011, Vol.178-179, p.31-34

2011

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Point Defects in γ-Irradiated Germanium: High- and Low- Momentum Positron Annihilation Study Before and After n-p-Conversion

Solid state phenomena, 2009-10, Vol.156-158, p.455-460

2009

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Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals

Solid state phenomena, 2011, Vol.178-179, p.313-318

2011

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Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide

Materials Science Forum, 2005-05, Vol.483-485, p.385-388

2005

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The Effect of Germanium Doping on the Production of Carbon–Related Defects in Electron-Irradiated Czochralski Silicon

Solid state phenomena, 2009-10, Vol.156-158, p.187-192

2009

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Configuration of DV Complexes In Ge: Positron Probing of Ion Cores

Solid state phenomena, 2008-01, Vol.131-133, p.89-94

2008

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Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal

Solid state phenomena, 2005-12, Vol.108-109, p.615-620

2005

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The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon

Solid state phenomena, 2005-12, Vol.108-109, p.205-210

2005

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Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys

Solid state phenomena, 2005-12, Vol.108-109, p.253-260

2005

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"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress

Solid state phenomena, 2005-12, Vol.108-109, p.181-186

2005

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Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon

Solid state phenomena, 2004-01, Vol.95-96, p.59-64

2004

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Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing

Materials science forum, 2001-01, Vol.353-356, p.799-802

2001

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Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon

Solid state phenomena, 2001-11, Vol.82-84, p.259-266

2001

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Thermal Donors in Silicon Implanted with Rare Earth Impurities

Solid state phenomena, 2002-01, Vol.82-84, p.93-98

2002

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Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

Materials science forum, 1997-01, Vol.258-263, p.1143-1148

1997

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Surface Gettering Background Impurities and Defects in GaAs Plates

Solid state phenomena, 1999-08, Vol.69-70, p.279-284

1999

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Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures

Materials science forum, 1997-01, Vol.258-263, p.575-580

1997

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Rare Earth Impurities and Impurity-Related Centers in Silicon

Solid state phenomena, 1999-08, Vol.69-70, p.365-370

1999

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Donor Centers in Er-Implanted Silicon

Materials science forum, 1997-01, Vol.258-263, p.1515-1520

1997

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New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics

Solid state phenomena, 1995-07, Vol.47-48, p.259-266

1995

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Silicon Impurity-Related Effects on Structural Defects in III-V Nitrides

Solid state phenomena, 1999-08, Vol.69-70, p.525-530

1999

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Positron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in n-FZ-Si:P Crystals

Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals

IR Studies on VON, CIOI and CICS Defects in Ge-Doped Cz-Si

The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures

Electron Mobility in Moderately Doped Si1-xGex

Point Defects in γ-Irradiated Germanium: High- and Low- Momentum Positron Annihilation Study Before and After n-p-Conversion

Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals

Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide

The Effect of Germanium Doping on the Production of Carbon–Related Defects in Electron-Irradiated Czochralski Silicon

Configuration of DV Complexes In Ge: Positron Probing of Ion Cores

Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal

The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon

Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys

"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress

Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon

Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing

Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon

Thermal Donors in Silicon Implanted with Rare Earth Impurities

Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

Surface Gettering Background Impurities and Defects in GaAs Plates

Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures

Rare Earth Impurities and Impurity-Related Centers in Silicon

Donor Centers in Er-Implanted Silicon

New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics

Silicon Impurity-Related Effects on Structural Defects in III-V Nitrides

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