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Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

Electronics letters, 2007, Vol.43 (14), p.777-779

2007

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Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures

Journal of physics. Condensed matter, 2011-01, Vol.23 (3), p.035801-7

2011

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Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection

Applied physics letters, 2011-02, Vol.98 (6), p.062106-062106-3

2011

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Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 − xSb heterostructures

Semiconductor science and technology, 2010-12, Vol.25 (12), p.125005

2010

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Giant enhanced g-factors in an InSb two-dimensional gas

Physical review. B, Condensed matter and materials physics, 2009-09, Vol.80 (12), Article 125328

2009

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Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures

Semiconductor science and technology, 2006-10, Vol.21 (10), p.1408-1411

2006

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Electronic transport in modulation-doped InSb quantum well heterostructures

Physical review. B, Condensed matter and materials physics, 2008-04, Vol.77 (16), Article 165334

2008

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Lateral n–i–p junctions formed in an InSb quantum well by bevel etching

Semiconductor science and technology, 2005-02, Vol.20 (2), p.144-148

2005

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Growth morphology evolution and dislocation introduction in the InGaAs/GaAs heteroepitaxial system

Journal of crystal growth, 1996, Vol.158 (1-2), p.15-27

1996

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Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells

Applied physics letters, 1990-11, Vol.57 (19), p.1986-1988

1990

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Lateral n–i–p junction characterization using laser microscopy

Semiconductor science and technology, 2005-05, Vol.20 (5), p.406-411

2005

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Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures

New journal of physics, 2010-05, Vol.12, p.053022

2010

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Midinfrared GaInSb∕AlGaInSb quantum well laser diodes grown on GaAs

Applied physics letters, 2007-09, Vol.91 (13)

2007

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Lateral light emitting n-i-p diodes in InSb∕AlxIn1−xSb quantum wells

Applied physics letters, 2006-09, Vol.89 (11)

2006

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InSb ∕ AlInSb quantum-well light-emitting diodes

Applied physics letters, 2006-01, Vol.88 (5), p.051107-051107-3

2006

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Inter-sub-band absorption in GaAs/AlGaAs single quantum wells

Semiconductor science and technology, 1988-07, Vol.3 (7), p.722-725

1988

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Photoluminescence from single InSb quantum wells

Applied physics letters, 2006-02, Vol.88 (8), p.081909-081909-3

2006

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Misfit dislocation sources at surface ripple Troughs in continuous heteroepitaxial layers

Physical review letters, 1995-09, Vol.75 (12), p.2368-2371

1995

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Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AlGaAs by high-pressure photoluminescence

Journal of electronic materials, 1991-07, Vol.20 (7), p.509-516

1991

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Dielectric functions and critical points of strained InxGa1-xAs on GaAs

Applied physics letters, 1992-05, Vol.60 (19), p.2412-2414

1992

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Mid-infrared AlxIn1-xSb components for gas sensing

Journal of physics. Conference series, 2007-07, Vol.76 (1), p.012003

2007

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Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

Applied physics letters, 2000-02, Vol.76 (8), p.943-945

2000

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Optical and electrical investigation of an asymmetric strained-layer double-barrier resonant-tunnelling structure

Semiconductor science and technology, 1994-09, Vol.9 (9), p.1608-1615

1994

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Mid-infrared AlxIn1−xSb light-emitting diodes

Applied physics letters, 2007-06, Vol.90 (23)

2007

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A photoluminescence study of indium desorption from strained Ga1-xInxAs/GaAs

Journal of crystal growth, 1991-05, Vol.111 (1-4), p.413-418

1991

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Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures

Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection

Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 − xSb heterostructures

Giant enhanced g-factors in an InSb two-dimensional gas

Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures

Electronic transport in modulation-doped InSb quantum well heterostructures

Lateral n–i–p junctions formed in an InSb quantum well by bevel etching

Growth morphology evolution and dislocation introduction in the InGaAs/GaAs heteroepitaxial system

Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells

Lateral n–i–p junction characterization using laser microscopy

Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures

Midinfrared GaInSb∕AlGaInSb quantum well laser diodes grown on GaAs

Lateral light emitting n-i-p diodes in InSb∕AlxIn1−xSb quantum wells

InSb ∕ AlInSb quantum-well light-emitting diodes

Inter-sub-band absorption in GaAs/AlGaAs single quantum wells

Photoluminescence from single InSb quantum wells

Misfit dislocation sources at surface ripple Troughs in continuous heteroepitaxial layers

Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AlGaAs by high-pressure photoluminescence

Dielectric functions and critical points of strained InxGa1-xAs on GaAs

Mid-infrared AlxIn1-xSb components for gas sensing

Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

Optical and electrical investigation of an asymmetric strained-layer double-barrier resonant-tunnelling structure

Mid-infrared AlxIn1−xSb light-emitting diodes

A photoluminescence study of indium desorption from strained Ga1-xInxAs/GaAs

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