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Grating spectrograph integrated with photodiode array in InGaAsP/InGaAs/InP

IEEE photonics technology letters, 1992-01, Vol.4 (1), p.108-110

1992

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Studies on the butt-coupling of InGaAsP-waveguides realized with selective area metalorganic vapour phase epitaxy

Journal of crystal growth, 1995-09, Vol.154 (1), p.27-33

1995

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Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration

Journal of crystal growth, 1992-05, Vol.120 (1), p.140-144

1992

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High quality epitaxial GaAs and InP wafers by isoelectronic doping

Applied physics letters, 1985-01, Vol.47 (8), p.828-830

1985

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Growth of GaInAs(P)/InP heterostructures on nonplanar substrates using MOMBE (CBE)

Journal of crystal growth, 1993-02, Vol.127 (1), p.175-178

1993

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High speed waveguide-integrated photodiodes grown by metal organic molecular beam epitaxy

Electronics letters, 1992, Vol.28 (4), p.344-345

1992

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High-speed monolithic InP/InGaAs pin-photodiode array with small pitch

Electronics letters, 1991-08, Vol.27 (17), p.1550

1991

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Minority carrier lifetime improvement by single strained layer epitaxy of InP

IEEE electron device letters, 1986-02, Vol.7 (2), p.98-100

1986

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Bipolar diodes fabricated on isoelectronically doped InP: Improvement of device performances and uniformity

Journal of crystal growth, 1987-05, Vol.83 (2), p.286-289

1987

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Fabrication of widegap-emitter Schottky-collector transistor using GaInAs/InP

Electronics letters, 1985, Vol.21 (3), p.85

1985

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InP/GaInAs heterojunction bipolar transistors with improved electrical characteristics grown on strained buffer layers

Electronics letters, 1987-03, Vol.23 (6), p.295-296

1987

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Reduction of dislocations in GaAs and InP epitaxial layers by quasi ternary growth and its effect on device performance

Journal of electronic materials, 1986-07, Vol.15 (4), p.247-250

1986

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Schottky-barriers on p-type GaInAs

IEEE transactions on electron devices, 1985-03, Vol.32 (3), p.605-609

1985

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High-speed GaInAs Schottky photodetector

Electronics letters, 1985, Vol.21 (5), p.180-181

1985

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Monolithically integrated DWDM receiver

IEE proceedings. Part J, Optoelectronics, 1993-02, Vol.140 (1), p.71

1993

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Fabrication of an NpM GaInAs/InP bipolar transistor by a two-step epitaxial process

Electronics letters, 1986-05, Vol.22 (11), p.590-591

1986

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Fabrication of an NpM GalnAs/InO bipolar transistor by a two-step epitaxial process

Electronics letters, 1986, Vol.22 (11), p.590-591

1986

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Fabrication of widegap-emitter Schottky-collector transistor using GalnAs/InP

Electronics letters, 1985, Vol.21 (3)

1985

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Monolithic integration of a waveguide InGaAs/InP pin photodiode with a locally ion implanted JFET for receiver OEIC applications

IEE proceedings. Part J, Optoelectronics, 1993, Vol.140 (1), p.66

1993

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High speed waveguide-integrated photodiodes grown bymetal organic molecular beam epitaxy

Electronics letters, 1992, Vol.28 (4), p.344-345

1992

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High-spead monolithic InP/InGaAs pin-photodiode array with small pitch

Electronics letters, 1991, Vol.27 (17), p.1550-1551

1991

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Diagenetic control of nitrogen isotope ratios in Holocene sapropels and recent sediments from the Eastern Mediterranean Sea

Biogeosciences, 2010-11, Vol.7 (11), p.3901-3914

2010

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What can we learn from amino acids about oceanic organic matter cycling and degradation?

Biogeosciences, 2022-02, Vol.19 (3), p.807-830

2022

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Signals of Holocene climate transition amplified by anthropogenic land-use changes in the westerly–Indian monsoon realm

Climate of the past, 2021-08, Vol.17 (4), p.1735-1749

2021

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Glacial–interglacial changes and Holocene variations in Arabian Sea denitrification

Biogeosciences, 2018-01, Vol.15 (2), p.507-527

2018

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Grating spectrograph integrated with photodiode array in InGaAsP/InGaAs/InP

Studies on the butt-coupling of InGaAsP-waveguides realized with selective area metalorganic vapour phase epitaxy

Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration

High quality epitaxial GaAs and InP wafers by isoelectronic doping

Growth of GaInAs(P)/InP heterostructures on nonplanar substrates using MOMBE (CBE)

High speed waveguide-integrated photodiodes grown by metal organic molecular beam epitaxy

High-speed monolithic InP/InGaAs pin-photodiode array with small pitch

Minority carrier lifetime improvement by single strained layer epitaxy of InP

Bipolar diodes fabricated on isoelectronically doped InP: Improvement of device performances and uniformity

Fabrication of widegap-emitter Schottky-collector transistor using GaInAs/InP

InP/GaInAs heterojunction bipolar transistors with improved electrical characteristics grown on strained buffer layers

Reduction of dislocations in GaAs and InP epitaxial layers by quasi ternary growth and its effect on device performance

Schottky-barriers on p-type GaInAs

High-speed GaInAs Schottky photodetector

Monolithically integrated DWDM receiver

Fabrication of an NpM GaInAs/InP bipolar transistor by a two-step epitaxial process

Fabrication of an NpM GalnAs/InO bipolar transistor by a two-step epitaxial process

Fabrication of widegap-emitter Schottky-collector transistor using GalnAs/InP

Monolithic integration of a waveguide InGaAs/InP pin photodiode with a locally ion implanted JFET for receiver OEIC applications

High speed waveguide-integrated photodiodes grown bymetal organic molecular beam epitaxy

High-spead monolithic InP/InGaAs pin-photodiode array with small pitch

Diagenetic control of nitrogen isotope ratios in Holocene sapropels and recent sediments from the Eastern Mediterranean Sea

What can we learn from amino acids about oceanic organic matter cycling and degradation?

Signals of Holocene climate transition amplified by anthropogenic land-use changes in the westerly–Indian monsoon realm

Glacial–interglacial changes and Holocene variations in Arabian Sea denitrification

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