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Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

Chemical communications (Cambridge, England), 2015-11, Vol.51 (86), p.15692-15695

2015

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Metal gate work function tuning by Al incorporation in TiN

Journal of applied physics, 2014-02, Vol.115 (7)

2014

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[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications

Applied physics letters, 2016-03, Vol.108 (13)

2016

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Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, p.260-263

2013

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Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

Applied physics letters, 2014-02, Vol.104 (8)

2014

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Chemisorption of ALD precursors in and on porous low-k films

Microelectronic engineering, 2013-06, Vol.106, p.81-84

2013

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Deposition of HfO2 on germanium and the impact of surface pretreatments

Applied physics letters, 2004-10, Vol.85 (17), p.3824-3826

2004

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Impact of Ta and W-based spacers in double MgO STT-MRAM free layers on perpendicular anisotropy and damping

Applied physics letters, 2017-10, Vol.111 (15)

2017

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Estimation of fixed charge densities in hafnium-silicate gate dielectrics

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2627-2633

2006

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Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

Applied physics letters, 2006-04, Vol.88 (14)

2006

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Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high- k oxides by attenuated total reflectance infrared spectroscopy

Applied surface science, 2009-06, Vol.255 (17), p.7812-7817

2009

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HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.256-260

2006

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Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates

Thin solid films, 2008-11, Vol.517 (1), p.172-177

2008

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BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

Applied physics letters, 2015-06, Vol.106 (26)

2015

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Strontium niobate high- k dielectrics: Film deposition and material properties

Acta materialia, 2010, Vol.58 (1), p.216-225

2010

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Seed layer impact on structural and magnetic properties of [Co/Ni] multilayers with perpendicular magnetic anisotropy

Journal of applied physics, 2017-01, Vol.121 (4)

2017

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Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

Applied physics letters, 2016-01, Vol.108 (4)

2016

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Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Journal of non-crystalline solids, 2005-07, Vol.351 (21-23), p.1902-1905

2005

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Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

Journal of applied physics, 2014-10, Vol.116 (16)

2014

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Study of CVD high- k gate oxides on high-mobility Ge and Ge/Si substrates

Thin solid films, 2006-06, Vol.508 (1), p.1-5

2006

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Synthetic-Ferromagnet Pinning Layers Enabling Top-Pinned Magnetic Tunnel Junctions for High-Density Embedded Magnetic Random-Access Memory

Physical review applied, 2018-11, Vol.10 (5), Article 054054

2018

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Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

Applied physics letters, 2005-04, Vol.86 (17)

2005

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Infrared molar absorption coefficient of H2O stretching modes in SiO2

Thin solid films, 2013-09, Vol.542, p.8-13

2013

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Interface control of high- k gate dielectrics on Ge

Applied surface science, 2008-07, Vol.254 (19), p.6094-6099

2008

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Injection and trapping of electrons in Y2O3 layers on Si

IOP conference series. Materials Science and Engineering, 2010-01, Vol.8 (1), p.012028-012028

2010

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Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

Metal gate work function tuning by Al incorporation in TiN

[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications

Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

Chemisorption of ALD precursors in and on porous low-k films

Deposition of HfO2 on germanium and the impact of surface pretreatments

Impact of Ta and W-based spacers in double MgO STT-MRAM free layers on perpendicular anisotropy and damping

Estimation of fixed charge densities in hafnium-silicate gate dielectrics

Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high- k oxides by attenuated total reflectance infrared spectroscopy

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates

BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

Strontium niobate high- k dielectrics: Film deposition and material properties

Seed layer impact on structural and magnetic properties of [Co/Ni] multilayers with perpendicular magnetic anisotropy

Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

Study of CVD high- k gate oxides on high-mobility Ge and Ge/Si substrates

Synthetic-Ferromagnet Pinning Layers Enabling Top-Pinned Magnetic Tunnel Junctions for High-Density Embedded Magnetic Random-Access Memory

Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

Infrared molar absorption coefficient of H2O stretching modes in SiO2

Interface control of high- k gate dielectrics on Ge

Injection and trapping of electrons in Y2O3 layers on Si

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