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FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.332-340

2018

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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1209-1216

2016

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Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

Journal of physics. Condensed matter, 2018-04, Vol.30 (14), p.144006-144006

2018

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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.933-939

2016

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Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs

IEEE access, 2019, Vol.7, p.12790-12797

2019

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Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.601-610

2018

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Creating a next-generation phenotype library: the health data research UK Phenotype Library

JAMIA open, 2024-07, Vol.7 (2), p.ooae049

2024

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Creating a Cleaned Dataset for Ease of Use

International journal of population data science, 2024-09, Vol.9 (5)

2024

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Sensitive Data Flagging within Data Quality reports: R and Regex Integration for Effective Text Flagging in Large Datasets

International journal of population data science, 2024-09, Vol.9 (5)

2024

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3-D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET With Different Cross Sections

IEEE transactions on nanotechnology, 2015-01, Vol.14 (1), p.93-100

2015

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Evolving the HDRUK Phenotype Library: Phenotype Creation and Editing

International journal of population data science, 2024-09, Vol.9 (5)

2024

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Developing a High Velocity Dataset Quality Checking Pipeline

International journal of population data science, 2024-09, Vol.9 (5)

2024

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Repeatable Research Infrastructure Enabling Administrative Data Analysis

International journal of population data science, 2019-11, Vol.4 (3)

2019

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Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.377-380

2015

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Data Quality Automation: a Generic Approach for Large Linked Research Datasets

International journal of population data science, 2018-09, Vol.3 (4)

2018

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Cost of managing patients with venous leg ulcers

International wound journal, 2020-08, Vol.17 (4), p.1074-1082

2020

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Metal Grain Granularity Study on a Gate-All-Around Nanowire FET

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.5263-5269

2017

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Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

Solid-state electronics, 2017-02, Vol.128, p.17-24

2017

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Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations

2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, p.184-187

2017

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3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.229-232

2016

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Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors

2015 International Workshop on Computational Electronics (IWCE), 2015, p.1-4

2015

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Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2016, p.52-55

2016

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Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors

2015 International Workshop on Computational Electronics (IWCE), 2015, p.1-4

2015

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3D Monte Carlo study of scaled SOI FinFETs using 2D Schrödinger quantum corrections

2014 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014, p.97-100

2014

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FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors

Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs

Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations

Creating a next-generation phenotype library: the health data research UK Phenotype Library

Creating a Cleaned Dataset for Ease of Use

Sensitive Data Flagging within Data Quality reports: R and Regex Integration for Effective Text Flagging in Large Datasets

3-D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET With Different Cross Sections

Evolving the HDRUK Phenotype Library: Phenotype Creation and Editing

Developing a High Velocity Dataset Quality Checking Pipeline

Repeatable Research Infrastructure Enabling Administrative Data Analysis

Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs

Data Quality Automation: a Generic Approach for Large Linked Research Datasets

Cost of managing patients with venous leg ulcers

Metal Grain Granularity Study on a Gate-All-Around Nanowire FET

Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations

3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs

Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors

Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors

3D Monte Carlo study of scaled SOI FinFETs using 2D Schrödinger quantum corrections

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