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Two-dimensional long-range–ordered growth of uniform cobalt nanostructures on a Au(111) vicinal template

Europhysics letters, 2002-06, Vol.58 (5), p.730-736

2002

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Ordered growth of cobalt nanostructures on a Au(111) vicinal surface: nucleation mechanisms and temperature behavior

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-11, Vol.96 (2), p.178-187

2002

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Self-ordering in two dimensions: nitrogen adsorption on copper (1 0 0) followed by STM at elevated temperature

Surface science, 2001-03, Vol.476 (1), p.95-106

2001

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Pre-structured metallic template for the growth of ordered, square-based nanodots

Surface science, 2002-06, Vol.511 (1-3), p.183-189

2002

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Temperature dependence of ordered cobalt nanodots growth on Au(7 8 8)

Applied surface science, 2003-05, Vol.212-213, p.360-366

2003

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Self-ordering on crystal surfaces: fundamentals and applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-11, Vol.96 (2), p.169-177

2002

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Optical Er-doping of Si during sublimational molecular beam epitaxy

Journal of crystal growth, 1999-05, Vol.201, p.534-537

1999

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Nuclear fission time measurements as a function of excitation energy: A crystal blocking experiment

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-06, Vol.193 (1), p.852-859

2002

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Determination of crystal lattice defects by investigation of the channeling shoulder

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999-09, Vol.155 (4), p.479-488

1999

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Crystal adjustment by means of blocking pattern

Review of scientific instruments, 2000-07, Vol.71 (7), p.2693-2697

2000

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Upgrading RBS analysis of single crystals by application of triple correlation

AIP conference proceedings, 1999, Vol.475 (1)

1999

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Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2001-08, Vol.35 (8), p.918-923

2001

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Low-temperature phases of Xe on Pd(111)

Physical review. B, Condensed matter, 2003-07, Vol.68 (4), Article 045406

2003

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Optically Active Si:Er Layers Grown by the Sublimation MBE Method

Acta physica Polonica, A, 1998-09, Vol.94 (3), p.549-554

1998

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Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 1999-02, Vol.33 (2), p.131-134

1999

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Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy

Technical physics letters, 2000-01, Vol.26 (1), p.41-43

2000

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Properties of optically active Si:Er and Si 1− xGe x layers grown by the sublimation MBE method : [Thin Solid Films 369 (2000) 320–323] 1,2

Thin solid films, 2001, Vol.381 (1), p.164-169

2001

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Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method

Thin solid films, 2001-01, Vol.381 (1), p.164-169

2001

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Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method

Thin solid films, 2000-07, Vol.369 (1-2), p.426-430

2000

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Assembly for Rutherford backscattering at exactly 180

Review of scientific instruments, 1996-05, Vol.67 (5), p.1794-1799

1996

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Properties of optically active Si:Er and Si sub(1-x)Ge sub(x) layers grown by the sublimation MBE method [Thin Solid Films 369 (2000) 320-323

Thin solid films, 2001-01, Vol.381 (1), p.164-169

2001

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Properties of optically active Si:Er and Si sub(1-x)Ge sub(x) layers grown by the sublimation MBE method

Thin solid films, 2000-07, Vol.369 (1), p.426-430

2000

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Temperature dependence of ordered cobalt nanodots growth on Au(7 8 8)

Applied surface science, 2003, Vol.212-13, p.360-366

2003

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Properties of optically active Si:Er and Si1-xGex layers grown by the sublimation MBE method

Thin solid films, 2000, Vol.369 (1-2), p.426-430

2000

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Experimental findings in 180° backscattering enhancement from solids

Physical review. B, Condensed matter, 1997-02, Vol.55 (5), p.2867-2873

1997

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Two-dimensional long-range–ordered growth of uniform cobalt nanostructures on a Au(111) vicinal template

Ordered growth of cobalt nanostructures on a Au(111) vicinal surface: nucleation mechanisms and temperature behavior

Self-ordering in two dimensions: nitrogen adsorption on copper (1 0 0) followed by STM at elevated temperature

Pre-structured metallic template for the growth of ordered, square-based nanodots

Temperature dependence of ordered cobalt nanodots growth on Au(7 8 8)

Self-ordering on crystal surfaces: fundamentals and applications

Optical Er-doping of Si during sublimational molecular beam epitaxy

Nuclear fission time measurements as a function of excitation energy: A crystal blocking experiment

Determination of crystal lattice defects by investigation of the channeling shoulder

Crystal adjustment by means of blocking pattern

Upgrading RBS analysis of single crystals by application of triple correlation

Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy

Low-temperature phases of Xe on Pd(111)

Optically Active Si:Er Layers Grown by the Sublimation MBE Method

Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy

Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy

Properties of optically active Si:Er and Si 1− xGe x layers grown by the sublimation MBE method : [Thin Solid Films 369 (2000) 320–323] 1,2

Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method

Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method

Assembly for Rutherford backscattering at exactly 180

Properties of optically active Si:Er and Si sub(1-x)Ge sub(x) layers grown by the sublimation MBE method [Thin Solid Films 369 (2000) 320-323

Properties of optically active Si:Er and Si sub(1-x)Ge sub(x) layers grown by the sublimation MBE method

Temperature dependence of ordered cobalt nanodots growth on Au(7 8 8)

Properties of optically active Si:Er and Si1-xGex layers grown by the sublimation MBE method

Experimental findings in 180° backscattering enhancement from solids

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