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Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers

Applied physics letters, 2004-02, Vol.84 (7), p.1058-1060

2004

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Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

Applied physics letters, 2000-07, Vol.77 (2), p.262-264

2000

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Orientation dependence of the optical properties in InAs quantum-dash lasers on InP

Applied physics letters, 2002-08, Vol.81 (6), p.981-983

2002

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N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

Quantum electronics (Woodbury, N.Y.), 2012-12, Vol.42 (12), p.1073-1080

Eliseev, P G

2012

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Spectral perturbations in a semiconductor laser: II. Nonlinear interaction of modes

Quantum electronics (Woodbury, N.Y.), 2005-09, Vol.35 (9), p.791-794, Article 791

Eliseev, P G

2005

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Electrical properties of InAs/InGaAs quantum-dot laser heterostructures: A threshold effect

Quantum electronics (Woodbury, N.Y.), 2009-06, Vol.39 (6), p.501-504

2009

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Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW

Surface science, 2003-06, Vol.532, p.848-851

2003

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Semiconductor lasers: from homojunctions to quantum dots

Quantum electronics (Woodbury, N.Y.), 2002-12, Vol.32 (12), p.1085-1096, Article 1085

Eliseev, P G

2002

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On the calculation of the gyro-factor in a semiconductor ring laser

Quantum electronics (Woodbury, N.Y.), 2006-08, Vol.36 (8), p.738-740

Eliseev, P G

2006

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Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

IEEE journal of selected topics in quantum electronics, 2001-03, Vol.7 (2), p.135-142

2001

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Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Applied physics letters, 2006-02, Vol.88 (7), p.071121-071121-3

2006

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Optical strength of semiconductor laser materials

Progress in quantum electronics, 1996, Vol.20 (1), p.1-82

Eliseev, P.G.

1996

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The red σ2/kT spectral shift in partially disordered semiconductors

Journal of applied physics, 2003-05, Vol.93 (9), p.5404-5415

Eliseev, P. G.

2003

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Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity

Quantum electronics (Woodbury, N.Y.), 2004-12, Vol.34 (12), p.1127-1132

2004

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Analysis of absorption and amplification in a unipolar semiconductor structure with quantum dots

Quantum electronics (Woodbury, N.Y.), 2000-02, Vol.30 (2), p.152-157

Eliseev, P G

2000

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Effects of resonant mode coupling on optical Characteristics of InGaN-GaN-AlGaN lasers

IEEE journal of quantum electronics, 2005-04, Vol.41 (4), p.517-524

2005

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Photoluminescence mapping on InAs/InGaAs quantum dot structures

Physica status solidi. C, 2005-05, Vol.2 (8), p.2951-2954

2005

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Single-mode laser diode at 778-nm wavelength: effect of p-doping

IEEE photonics technology letters, 2002-01, Vol.14 (1), p.15-17

2002

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Large S-section-ring-cavity diode lasers: directional switching, electrical diagnostics, and mode beating spectra

IEEE photonics technology letters, 2005-02, Vol.17 (2), p.282-284

2005

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Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells

Physica status solidi. A, Applied research, 2003-01, Vol.195 (1), p.209-213

2003

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Anomalous splitting in microwave mode-beating spectra of semiconductor ring lasers

Electronics letters, 2005-08, Vol.41 (17), p.963

2005

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InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1239-1245

2003

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Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire

Journal of electronic materials, 2000-03, Vol.29 (3), p.332-341

2000

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Cubic InN inclusions: Proposed explanation for the small pressure-shift anomaly of the luminescence in InGaN-based quantum wells

Solid state communications, 1998-06, Vol.106 (9), p.567-571

1998

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Emission from quantum-well InGaAs structures

Quantum electronics (Woodbury, N.Y.), 1998-03, Vol.28 (3), p.198-202

1998

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Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers

Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

Orientation dependence of the optical properties in InAs quantum-dash lasers on InP

N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

Spectral perturbations in a semiconductor laser: II. Nonlinear interaction of modes

Electrical properties of InAs/InGaAs quantum-dot laser heterostructures: A threshold effect

Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW

Semiconductor lasers: from homojunctions to quantum dots

On the calculation of the gyro-factor in a semiconductor ring laser

Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Optical strength of semiconductor laser materials

The red σ2/kT spectral shift in partially disordered semiconductors

Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity

Analysis of absorption and amplification in a unipolar semiconductor structure with quantum dots

Effects of resonant mode coupling on optical Characteristics of InGaN-GaN-AlGaN lasers

Photoluminescence mapping on InAs/InGaAs quantum dot structures

Single-mode laser diode at 778-nm wavelength: effect of p-doping

Large S-section-ring-cavity diode lasers: directional switching, electrical diagnostics, and mode beating spectra

Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells

Anomalous splitting in microwave mode-beating spectra of semiconductor ring lasers

InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers

Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire

Cubic InN inclusions: Proposed explanation for the small pressure-shift anomaly of the luminescence in InGaN-based quantum wells

Emission from quantum-well InGaAs structures

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