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Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration

Cumhuriyet Science Journal, 2020-09, Vol.41 (3), p.565-570

2020

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A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

Cumhuriyet Science Journal, 2024-06, Vol.45 (2), p.400-406

2024

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Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures

Physica. B, Condensed matter, 2015-01, Vol.457, p.48-53

2015

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XRD, XPS, and optical characterizations of Al-doped ZnO film grown on GaAs substrate

Turkish journal of physics, 2014, Vol.38, p.111-117

2014

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Polygonum cognatum Meissn. Ve Funguslu Ortamda Sentezlenen Gümüş Nanopartiküllerinin (AgNP) Antimikrobiyal Özelliklerinin Araştırılması

Türk tarım ve doğa bilimleri dergisi, 2020-01, Vol.7 (1), p.221-230

2020

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Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width

Cumhuriyet science journal (Online), 2019-02, Vol.40 (2), p.471-476

2019

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Optical and structural properties of MOCVD grown inxGa1-xAs apilayers

Cumhuriyet science journal (Online), 2017-04, Vol.38 (4), p.681-689

2017

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The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

International Journal of Innovative Engineering Applications, 2021-06, Vol.5 (1), p.6-10

2021

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Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes

Physica. E, Low-dimensional systems & nanostructures, 2014-09, Vol.63, p.186-192

2014

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GaAs Alttaş Üzerine Büyütülen GaAs/GaAlAs Heteroyapılarının Yüksek Çözünürlüklü X- Işını Kırınım Yöntemi Kullanılarak Karakterizasyonu

Afyon Kocatepe University Journal of Sciences and Engineering, 2020-09, Vol.20 (4), p.558-564

2020

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Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (100) InP for SWIR detectors

Materials science & engineering. B, Solid-state materials for advanced technology, 2020-12, Vol.262, p.114769, Article 114769

2020

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Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

Semiconductor science and technology, 2018-05, Vol.33 (5), p.55005

2018

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AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH 4 and TMIn

Semiconductor science and technology, 2019-07, Vol.34 (7), p.75028

2019

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High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate

Materials science in semiconductor processing, 2019-02, Vol.90, p.87-91

2019

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Structural and electrical properties of nitrogen-doped ZnO thin films

Applied surface science, 2014-11, Vol.318, p.157-163

2014

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Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width

Cumhuriyet Science Journal, 2019-06, Vol.40 (2), p.471-476

2019

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AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn

Semiconductor science and technology, 2019-06, Vol.34 (7)

2019

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The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition

Journal of physics. D, Applied physics, 2018-01, Vol.51 (3), p.35105

2018

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Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy: Direct growth of thick AlN layers on nanopatterned Si substrates

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.1600363

2017

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Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy: Direct growth of thick AlN layers on nanopatterned Si substrates

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.1770120

2017

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Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-np

2017

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Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

European physical journal. Applied physics, 2020-05, Vol.90 (2), p.20301

2020

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V/III ratio effects on high quality InAlAs for quantum cascade laser structures

Superlattices and microstructures, 2017-04, Vol.104, p.140-148

2017

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Optical and Structural Properties of MOCVD Grown InxGa1-xAs Epilayers

Cumhuriyet Science Journal, 2017-12, Vol.38 (4), p.681-689

2017

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Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration

A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures

XRD, XPS, and optical characterizations of Al-doped ZnO film grown on GaAs substrate

Polygonum cognatum Meissn. Ve Funguslu Ortamda Sentezlenen Gümüş Nanopartiküllerinin (AgNP) Antimikrobiyal Özelliklerinin Araştırılması

Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width

Optical and structural properties of MOCVD grown inxGa1-xAs apilayers

The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes

GaAs Alttaş Üzerine Büyütülen GaAs/GaAlAs Heteroyapılarının Yüksek Çözünürlüklü X- Işını Kırınım Yöntemi Kullanılarak Karakterizasyonu

Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (100) InP for SWIR detectors

Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH 4 and TMIn

High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate

Structural and electrical properties of nitrogen-doped ZnO thin films

Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width

AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn

The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition

Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy: Direct growth of thick AlN layers on nanopatterned Si substrates

Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy: Direct growth of thick AlN layers on nanopatterned Si substrates

Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

V/III ratio effects on high quality InAlAs for quantum cascade laser structures

Optical and Structural Properties of MOCVD Grown InxGa1-xAs Epilayers

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