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Simulation of Carrier Trapping in an Embedded Nanowire and Its Effect in the Nano-EBIC Technique

Semiconductors (Woodbury, N.Y.), 2021-01, Vol.55 (1), p.56-60

2021

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Simulated Contrast of Two Dislocations

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.442-446

2019

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Local electronic transport through InAs/InP(0 0 1) quantum dots capped with a thin InP layer studied by an AFM conductive probe

Semiconductor science and technology, 2007-07, Vol.22 (7), p.755-762, Article 755

2007

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Conductive AFM microscopy study of the carrier transport and storage in Ge nanocrystals grown by dewetting

Nanotechnology, 2010-02, Vol.21 (6), p.065706-065706

2010

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High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p +–n silicon junction

Ultramicroscopy, 2008-05, Vol.108 (6), p.605-612

2008

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Ge nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: structural, morphological, and charge trapping properties

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2012-05, Vol.14 (5), p.1-10, Article 843

2012

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Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies

Journal of physics. D, Applied physics, 1999-07, Vol.32 (13), p.1435-1442

1999

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The effect of (In, Cu) doping and co-doping on physical properties and organic pollutant photodegradation efficiency of ZnO nanoparticles for wastewater remediation

Ceramics international, 2023-11, Vol.49 (21), p.33828-33841

2023

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Simulated contrast of two dislocations -=SUP=--=/SUP

Žurnal tehničeskoj fiziki, 2019, Vol.53 (4), p.466

2019

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An unusual nonlinearity in current-voltage curves of a bidimensional electron gas at low temperatures

Journal of applied physics, 2005-12, Vol.98 (12), p.123701-123701-5

2005

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Relaxation of positive charge during bidirectional electric stress on metal–oxide–silicon capacitors

Journal of applied physics, 1999-12, Vol.86 (11), p.6234-6238

1999

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Structural, morphological and electronic study of CVD SnO2:Sb films

Materials chemistry and physics, 2013-05, Vol.139 (2-3), p.871-876

2013

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Positive charge instability during bidirectional stress on metal–oxide–silicon capacitors

Journal of applied physics, 2000-12, Vol.88 (11), p.6589-6593

2000

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An aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress

Journal of applied physics, 2005-07, Vol.98 (2), p.024501-024501-5

2005

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Three-dimensional simulation of electron beam induced current collected by a nano-contact: Diffusion and collection analysis

Journal of applied physics, 2011-12, Vol.110 (12), p.124515-124515-7

2011

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Electric bidirectional stress effects on metal–oxide–silicon capacitors

Journal of applied physics, 2001-01, Vol.89 (2), p.1405-1410

2001

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Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness

Microelectronics and reliability, 2004-03, Vol.44 (3), p.543-546

2004

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Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures

Materials science in semiconductor processing, 2010-12, Vol.13 (5), p.405-410

2010

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Nano-electron beam induced current and hole charge dynamics through uncapped Ge nanocrystals

Applied physics letters, 2012-04, Vol.100 (16), p.163117-163117-4

2012

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Bidirectional stress on a p-metal–oxide–silicon capacitor

Journal of applied physics, 1999-05, Vol.85 (9), p.6593-6597

1999

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The positive charge neutralisation after bi-directional stress on MOS capacitors

Microelectronics and reliability, 2000-04, Vol.40 (4-5), p.759-761

2000

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Impact of the band–band tunneling in silicon on electrical characteristics of Al/SiO2/p+-Si structures with the sub-3 nm oxide under positive bias

Solid-state electronics, 2003-04, Vol.47 (4), p.617-620

2003

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Germanium nanocrystal density and size effects on carrier storage and emission

Journal of applied physics, 2008-09, Vol.104 (6)

2008

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Soft breakdown as a cause of current drop in an MOS tunnel structure

Semiconductors (Woodbury, N.Y.), 2004-06, Vol.38 (6), p.724-726

2004

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Tunnel charge transport within silicon in reversely-biased MOS tunnel structures

Microelectronics, 2006-02, Vol.37 (2), p.114-120

2006

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Simulation of Carrier Trapping in an Embedded Nanowire and Its Effect in the Nano-EBIC Technique

Simulated Contrast of Two Dislocations

Local electronic transport through InAs/InP(0 0 1) quantum dots capped with a thin InP layer studied by an AFM conductive probe

Conductive AFM microscopy study of the carrier transport and storage in Ge nanocrystals grown by dewetting

High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p +–n silicon junction

Ge nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: structural, morphological, and charge trapping properties

Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies

The effect of (In, Cu) doping and co-doping on physical properties and organic pollutant photodegradation efficiency of ZnO nanoparticles for wastewater remediation

Simulated contrast of two dislocations -=SUP=--=/SUP

An unusual nonlinearity in current-voltage curves of a bidimensional electron gas at low temperatures

Relaxation of positive charge during bidirectional electric stress on metal–oxide–silicon capacitors

Structural, morphological and electronic study of CVD SnO2:Sb films

Positive charge instability during bidirectional stress on metal–oxide–silicon capacitors

An aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress

Three-dimensional simulation of electron beam induced current collected by a nano-contact: Diffusion and collection analysis

Electric bidirectional stress effects on metal–oxide–silicon capacitors

Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness

Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures

Nano-electron beam induced current and hole charge dynamics through uncapped Ge nanocrystals

Bidirectional stress on a p-metal–oxide–silicon capacitor

The positive charge neutralisation after bi-directional stress on MOS capacitors

Impact of the band–band tunneling in silicon on electrical characteristics of Al/SiO2/p+-Si structures with the sub-3 nm oxide under positive bias

Germanium nanocrystal density and size effects on carrier storage and emission

Soft breakdown as a cause of current drop in an MOS tunnel structure

Tunnel charge transport within silicon in reversely-biased MOS tunnel structures

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