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Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

Journal of electronic materials, 2021-12, Vol.50 (12), p.6741-6747

2021

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On temperature-dependent experimental I - V and C - V data of Ni / n -GaN Schottky contacts

Journal of applied physics, 2010-12, Vol.108 (11), p.114506-114506-8

2010

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Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance

Materials, 2022-09, Vol.15 (19), p.6763

2022

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The electrical characterizations and illumination response of Co/N-type GaP junction device

Current Applied Physics, 2015, 15(9), , pp.1054-1061

2015

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Investigation of Donor-like State Distributions in Solution-Processed IZO Thin-Film Transistor through Photocurrent Analysis

Nanomaterials (Basel, Switzerland), 2023-11, Vol.13 (23), p.2986

2023

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Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

Journal of materials science. Materials in electronics, 2023-09, Vol.34 (27), p.1846, Article 1846

2023

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Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures

Journal of molecular structure, 2021-01, Vol.1224, p.129057, Article 129057

2021

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The Characteristic Parameters of Ni/n-6H-SiC Devices Over a Wide Measurement Temperature Range

SILICON, 2017-05, Vol.9 (3), p.395-401

2017

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Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range

SILICON, 2022-05, Vol.14 (7), p.3493-3500

2022

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Effect of different sound atmospheres on SnO 2 :Sb thin films prepared by dip coating technique

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2017-11, Vol.31 (31), p.1750288

2017

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Characterization of CuO/n-Si heterojunction solar cells produced by thermal evaporation

Materials science--Poland, 2018-12, Vol.36 (4), p.668-674

2018

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THE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE

Surface review and letters, 2017-06, Vol.24 (4), p.1750052

2017

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Temperature dependence of interface-state density distributions in Cu/CuO/n-type Si structures

Materials today : proceedings, 2021, Vol.46, p.7030-7032

2021

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Temperature-dependent current-voltage characteristics in thermally annealed ferromagnetic Co/n-GaN Schottky contacts

European physical journal. Applied physics, 2014-11, Vol.68 (2), p.20101

2014

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Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions

Journal of radioanalytical and nuclear chemistry, 2011-07, Vol.289 (1), p.145-148

2011

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Frequency and Temperature Dependent Electrical Characterization of Ni/N-Gap/Al Schottky Barrier Diodes

SSRN Electronic Journal

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Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

On temperature-dependent experimental I - V and C - V data of Ni / n -GaN Schottky contacts

Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance

The electrical characterizations and illumination response of Co/N-type GaP junction device

Investigation of Donor-like State Distributions in Solution-Processed IZO Thin-Film Transistor through Photocurrent Analysis

Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures

The Characteristic Parameters of Ni/n-6H-SiC Devices Over a Wide Measurement Temperature Range

Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range

Effect of different sound atmospheres on SnO 2 :Sb thin films prepared by dip coating technique

Characterization of CuO/n-Si heterojunction solar cells produced by thermal evaporation

THE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE

Temperature dependence of interface-state density distributions in Cu/CuO/n-type Si structures

Temperature-dependent current-voltage characteristics in thermally annealed ferromagnetic Co/n-GaN Schottky contacts

Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions

Frequency and Temperature Dependent Electrical Characterization of Ni/N-Gap/Al Schottky Barrier Diodes

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