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Influence of Dopants on Defect Formation in GaN

Physica status solidi. B. Basic research, 2001-11, Vol.228 (2), p.345-352

2001

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High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

Electronics letters, 1997-11, Vol.33 (23), p.1980

1997

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Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition

Applied physics letters, 2000-10, Vol.77 (16), p.2503-2505

2000

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Ordering in bulk GaN : Mg samples: defects caused by Mg doping

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.124-129

1999

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AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition

Electronics letters, 2000-01, Vol.36 (1), p.80-81

2000

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Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C60 and Si effusion cells

Journal of crystal growth, 2002, Vol.234 (2-3), p.369-372

2002

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High-speed pin ultraviolet photodetectors fabricated on GaN

Electronics letters, 1998-09, Vol.34 (18), p.1779

1998

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Growth of low resistivity p-type GaN by metal organic chemical vapour deposition

Electronics letters, 1997-11, Vol.33 (23), p.1987

1997

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Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C 60 and Si effusion cells

Journal of crystal growth, 2002, Vol.234 (2), p.369-372

2002

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Low dark current pin ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition

Electronics letters, 1998-04, Vol.34 (7), p.692

1998

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Modeling rhenium metallization of a silicon-rich (0 0 1) 6H-SiC surface

Materials science in semiconductor processing, 2005-08, Vol.8 (4), p.497-501

2005

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Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition

Journal of crystal growth, 1998-12, Vol.195 (1), p.340-345

1998

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Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2000-12, Vol.221 (1-4), p.362-367

2000

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Optical properties of undoped and modulation-doped Al xGa 1− xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2000, Vol.221 (1), p.362-367

2000

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Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2000-12, Vol.221 (1), p.240-245

2000

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Mg-doped GaN: Similar defects in bulk crystals and layers grown onAl2O3 by metal-organic chemical-vapor deposition

Applied physics letters, 1999-07, Vol.75 (26)

1999

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Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth

MRS proceedings, 1999, Vol.595, Article F99W11.55

1999

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Characterization of AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapor Deposition

physica status solidi (b), 1999-11, Vol.216 (1), p.193-197

1999

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Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al x Ga 1-x N Layers Grown by MOCVD

MRS proceedings, 1999, Vol.595, Article F99W3.77

1999

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Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1-xN Layers Grown by MOCVD

MRS proceedings, 1999, Vol.595

1999

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Mg Segregation, Difficulties of P-Doping in GaN

MRS proceedings, 1999, Vol.595, Article F99W9.7

1999

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Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth

MRS Internet journal of nitride semiconductor research, 2000, Vol.5 (S1), p.782-788

2000

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Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al x Ga 1−x N Layers Grown by MOCVD

MRS Internet journal of nitride semiconductor research, 2000, Vol.5 (S1), p.294-300

2000

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Mg Segregation, Difficulties of P-Doping in GaN

MRS Internet journal of nitride semiconductor research, 2000, Vol.5 (S1), p.500-506

2000

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Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.231-234

1997

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Influence of Dopants on Defect Formation in GaN

High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition

Ordering in bulk GaN : Mg samples: defects caused by Mg doping

AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition

Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C60 and Si effusion cells

High-speed pin ultraviolet photodetectors fabricated on GaN

Growth of low resistivity p-type GaN by metal organic chemical vapour deposition

Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C 60 and Si effusion cells

Low dark current pin ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition

Modeling rhenium metallization of a silicon-rich (0 0 1) 6H-SiC surface

Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition

Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Optical properties of undoped and modulation-doped Al xGa 1− xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition

Mg-doped GaN: Similar defects in bulk crystals and layers grown onAl2O3 by metal-organic chemical-vapor deposition

Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth

Characterization of AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapor Deposition

Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al x Ga 1-x N Layers Grown by MOCVD

Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1-xN Layers Grown by MOCVD

Mg Segregation, Difficulties of P-Doping in GaN

Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth

Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al x Ga 1−x N Layers Grown by MOCVD

Mg Segregation, Difficulties of P-Doping in GaN

Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

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