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Robust excitons inhabit soft supramolecular nanotubes

Proceedings of the National Academy of Sciences - PNAS, 2014-08, Vol.111 (33), p.E3367-E3375

2014

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Evolution of the InAs wetting layer on GaAs(001)-c(4×4) on the atomic scale

Applied physics letters, 2009-12, Vol.95 (23)

2009

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Intercontinental transport and its influence on the ozone concentrations over central Europe: Three case studies

Journal of Geophysical Research - Atmospheres, 2003-06, Vol.108 (D12), p.8530-n/a

2003

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Adsorption behavior of cobalt phthalocyanine submonolayer coverages on B-Si(111)- 3 × 3 R 30

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-07, Vol.38 (4)

2020

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Adsorption behavior of cobalt phthalocyanine submonolayer coverages on B-Si(111)-3×3R30

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-07, Vol.38 (4)

2020

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Non-polar group-III nitride semiconductor surfaces

Physica status solidi. PSS-RRL. Rapid research letters, 2012-10, Vol.6 (9-10), p.359-369

2012

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Composition dependence of intrinsic surface states and Fermi-level pinning at ternary Al x Ga1− x N m -plane surfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-03, Vol.42 (2)

2024

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Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-03, Vol.42 (2)

2024

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Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth

Journal of crystal growth, 2012, Vol.338 (1), p.103-106

2012

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Composition modulation by twinning in InAsSb nanowires

Nanotechnology, 2019-08, Vol.30 (32), p.324005-324005

2019

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Tuning the Au-Free InSb Nanocrystal Morphologies Grown by Patterned Metal-Organic Chemical Vapor Deposition

Advanced functional materials, 2014-07, Vol.24 (27), p.4311-4316

2014

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Valence band structure and effective masses of GaN ( 10 1 ¯ 0 )

Physical review. B, 2019-05, Vol.99 (19), p.195306, Article 195306

2019

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Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM

Philosophical magazine (Abingdon, England), 2018-12, Vol.98 (34), p.3072-3085

2018

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Lazarevicite-type short-range ordering in ternary III-V nanowires

Physical review. B, 2016-11, Vol.94 (19), Article 195306

2016

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Electronic structure of the Si(111)√3×√3R30 ∘−B surface from theory and photoemission spectroscopy

Physical review. B, 2021-01, Vol.103 (3), p.035303

2021

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Electronic structure of the Si ( 111 ) 3 × 3 R 30 ∘ − B surface from theory and photoemission spectroscopy

Physical review. B, 2021-01, Vol.103 (3), Article 035303

2021

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Arrangement and electronic properties of cobalt phthalocyanine molecules on B-Si(111)- √3 × √3 R30

Physical review. B, 2019-12, Vol.100 (24), p.1

2019

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Arrangement and electronic properties of cobalt phthalocyanine molecules on B-Si(111)- 3 × 3 R 30

Physical review. B, 2019-12, Vol.100 (24), Article 245301

2019

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Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale

Applied physics letters, 2013-03, Vol.102 (12)

2013

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Robust excitons inhabit soft supramolecular nanotubes

Proceedings of the National Academy of Sciences - PNAS, 2014-08, Vol.111 (33), p.11921-11921

2014

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Atomic structure and optical properties of InAs submonolayer depositions in GaAs

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-07, Vol.29 (4)

2011

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Confined States of Individual Type-II GaSb/GaAs Quantum Rings Studied by Cross-Sectional Scanning Tunneling Spectroscopy

Nano letters, 2010-10, Vol.10 (10), p.3972-3977

2010

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Evolution of the InAs wetting layer on GaAs ( 001 ) -c ( 4 × 4 ) on theatomic scale

Applied physics letters, 2009-12, Vol.95 (23), p.233118-233118-3

2009

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20 Gb/s 85 ^C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1302-1308

2007

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Adsorbtion of Oxygen and Hydrogen Atoms on the GaAs(110) Surface

2019 Compound Semiconductor Week (CSW), 2019, p.1-1

2019

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Robust excitons inhabit soft supramolecular nanotubes

Evolution of the InAs wetting layer on GaAs(001)-c(4×4) on the atomic scale

Intercontinental transport and its influence on the ozone concentrations over central Europe: Three case studies

Adsorption behavior of cobalt phthalocyanine submonolayer coverages on B-Si(111)- 3 × 3 R 30

Adsorption behavior of cobalt phthalocyanine submonolayer coverages on B-Si(111)-3×3R30

Non-polar group-III nitride semiconductor surfaces

Composition dependence of intrinsic surface states and Fermi-level pinning at ternary Al x Ga1− x N m -plane surfaces

Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces

Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth

Composition modulation by twinning in InAsSb nanowires

Tuning the Au-Free InSb Nanocrystal Morphologies Grown by Patterned Metal-Organic Chemical Vapor Deposition

Valence band structure and effective masses of GaN ( 10 1 ¯ 0 )

Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM

Lazarevicite-type short-range ordering in ternary III-V nanowires

Electronic structure of the Si(111)√3×√3R30 ∘−B surface from theory and photoemission spectroscopy

Electronic structure of the Si ( 111 ) 3 × 3 R 30 ∘ − B surface from theory and photoemission spectroscopy

Arrangement and electronic properties of cobalt phthalocyanine molecules on B-Si(111)- √3 × √3 R30

Arrangement and electronic properties of cobalt phthalocyanine molecules on B-Si(111)- 3 × 3 R 30

Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale

Robust excitons inhabit soft supramolecular nanotubes

Atomic structure and optical properties of InAs submonolayer depositions in GaAs

Confined States of Individual Type-II GaSb/GaAs Quantum Rings Studied by Cross-Sectional Scanning Tunneling Spectroscopy

Evolution of the InAs wetting layer on GaAs ( 001 ) -c ( 4 × 4 ) on theatomic scale

20 Gb/s 85 ^C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

Adsorbtion of Oxygen and Hydrogen Atoms on the GaAs(110) Surface

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