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Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.991-997

2017

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Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

Journal of applied physics, 2016-04, Vol.119 (13)

2016

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Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075013

2010

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InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

IEEE electron device letters, 2011-11, Vol.32 (11), p.1537-1539

2011

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Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

Journal of applied physics, 2011-10, Vol.110 (8), p.084501-084501-5

2011

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Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

Semiconductor science and technology, 2009-07, Vol.24 (7), p.075014-075014 (5)

2009

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RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

Electronics letters, 2011-02, Vol.47 (3), p.212-214

2011

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The effect of AlN nucleation growth conditions on the inversion channel formation at the AlN/silicon interface

2015 73rd Annual Device Research Conference (DRC), 2015, p.175-176

2015

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In situ SiN passivation of AlInN/GaN heterostructures by MOVPE

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.2104-2106

2010

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MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates

Journal of crystal growth, 2007, Vol.298, p.843-847

2007

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Optimisation of AlInN/GaN HEMT structures

Physica status solidi. C, 2008-05, Vol.5 (6), p.2041-2043

2008

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AlInN/GaN HEMTs on sapphire: dc and pulsed characterisation

Physica status solidi. C, 2008-05, Vol.5 (6), p.1926-1928

2008

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Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates

Physica status solidi. C, 2006-06, Vol.3 (6), p.2342-2345

2006

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Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates FREE ARTICLE

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075013-075013

2010

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RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

Electronics letters, 2011-02, Vol.47 (3), p.1-1

2011

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Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S1041-S1044

2009

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75-nm-T-shaped-gate InAlN/AlN/GaN HEMT on sapphire with 100 GHz cutoff frequency

2011 6th European Microwave Integrated Circuit Conference, 2011, p.136-139

2011

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Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers

2008 European Microwave Integrated Circuit Conference, 2008, p.179-182

2008

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A quality improvement initiative for neonatal hypoglycemia screening and management in a level III neonatal intensive care unit

Journal of perinatology, 2023-10, Vol.43 (10), p.1321-1329

2023

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Electrically detected magnetic resonance in photoexcited fullerenes

Molecular physics, 1998-12, Vol.95 (5), p.967-972

1998

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Trierucoylglycerol biosynthesis in transgenic plants of rapeseed (Brassica napus L.)

Fett (Weinheim), 1997, Vol.99 (5), p.160-165

1997

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Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers

Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

The effect of AlN nucleation growth conditions on the inversion channel formation at the AlN/silicon interface

In situ SiN passivation of AlInN/GaN heterostructures by MOVPE

MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates

Optimisation of AlInN/GaN HEMT structures

AlInN/GaN HEMTs on sapphire: dc and pulsed characterisation

Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates

Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates FREE ARTICLE

RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties

75-nm-T-shaped-gate InAlN/AlN/GaN HEMT on sapphire with 100 GHz cutoff frequency

Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers

A quality improvement initiative for neonatal hypoglycemia screening and management in a level III neonatal intensive care unit

Electrically detected magnetic resonance in photoexcited fullerenes

Trierucoylglycerol biosynthesis in transgenic plants of rapeseed (Brassica napus L.)

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