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A viable indicator approach for assessing sustainable forest management in terms of carbon emissions and removals

Ecological indicators, 2020-04, Vol.111, p.106057, Article 106057

2020

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Electrical properties of (Ba,Sr)TiO3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes

Journal of applied physics, 2006-06, Vol.99 (11)

2006

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Productivity of mixed versus pure stands of oak (Quercus petraea (Matt.) Liebl. and Quercus robur L.) and European beech (Fagus sylvatica L.) along an ecological gradient

European journal of forest research, 2013-03, Vol.132 (2), p.263-280

2013

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Comparison of precursors for pulsed metal–organic chemical vapor deposition of HfO2 high-K dielectric thin films

Thin solid films, 2005-05, Vol.478 (1-2), p.206-217

2005

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SrTa 2 O 6 thin films for high- K dielectric applications grown by chemical vapor deposition on different substrates

Journal of applied physics, 2005-03, Vol.97 (7), p.073521-073521-8

2005

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Electrical properties of ( Ba , Sr ) Ti O 3 thin films revisited: The caseof chemical vapor deposited films on Pt electrodes

Journal of applied physics, 2006-06, Vol.99 (11), p.114108-114108-11

2006

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Guanidinate-Stabilized Monomeric Hafnium Amide Complexes as Promising Precursors for MOCVD of HfO2

Inorganic chemistry, 2006-12, Vol.45 (26), p.11008-11018

2006

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Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition

Applied physics letters, 2006-12, Vol.89 (23), p.232902-232902-3

2006

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Synthesis and characterisation of zirconium-amido guanidinato complex: a potential precursor for ZrO2 thin films

Dalton transactions : an international journal of inorganic chemistry, 2007-05 (17), p.1671-1676

2007

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Investigation of radiation damage by X-ray diffraction

Journal of nuclear materials, 1994-10, Vol.216, p.170-198

Ehrhart, Peter

1994

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Liquid injection MOCVD of TiO2 and SrTiO3 thin films from [Ti(OPri)2 (tbaoac)2] : Film properties and compatibility with [Sr(thd)2]

Surface & coatings technology, 2007-09, Vol.201 (22-23), p.9135-9140

2007

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Thin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors

Chemical vapor deposition, 2007-03, Vol.13 (2-3), p.98-104

2007

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Mononuclear precursor for MOCVD of HfO2 thin films

Chemical communications (Cambridge, England), 2004-07 (14), p.1610-1611

2004

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LI-MOCVD of HfO2 thin films using engineered amide based Hf precursors

Surface & coatings technology, 2007-09, Vol.201 (22-23), p.9109-9116

2007

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Liquid injection MOCVD of TiO 2 and SrTiO 3 thin films from [Ti(OPr i ) 2(tbaoac) 2]: Film properties and compatibility with [Sr(thd) 2]

Surface & coatings technology, 2007, Vol.201 (22), p.9135-9140

2007

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Liquid-Injection MOCVD of ZrO2 Thin Films using Zirconium Bis(diethlyamido)-bis(di-tert-butylmalonato) as a Novel Precursor

Chemical vapor deposition, 2006-05, Vol.12 (5), p.295-300

2006

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Guanidinate-Stabilized Monomeric Hafnium Amide Complexes as Promising Precursors for MOCVD of HfO 2

Inorganic chemistry, 2006-12, Vol.45 (26), p.11008-11018

2006

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LI-MOCVD of HfO 2 thin films using engineered amide based Hf precursors

Surface & coatings technology, 2007, Vol.201 (22), p.9109-9116

2007

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Synthesis and characterisation of zirconium–amido guanidinato complex: a potential precursor for ZrO 2 thin films

Dalton transactions : an international journal of inorganic chemistry, 2007 (17), p.1671-1676

2007

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Mononuclear Mixed β-Ketoester-alkoxide Compound of Titanium as a Promising Precursor for Low-Temperature MOCVD of TiO2 Thin Films

Chemical vapor deposition, 2003-12, Vol.9 (6), p.295-298

2003

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MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors

Chemical vapor deposition, 2006-03, Vol.12 (2-3), p.172-180

2006

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Advanced chemical deposition techniques - from research to production

Integrated ferroelectrics, 2001-01, Vol.36 (1-4), p.3-20

2001

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Mononuclear precursor for MOCVD of HfO2 thin filmsElectronic supplementary information (ESI) available: TG/DTA, and isothermal studies, RBS and AFM data of HfO2 film. See http://www.rsc.org/suppdata/cc/b4/b405015k

Chemical communications (Cambridge, England), 2004-07 (14), p.1610

2004

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SrTa{sub 2}O{sub 6} thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates

Journal of applied physics, 2005-04, Vol.97 (7)

2005

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MOCVD of ZrO2 and HfO2 thin films from modified monomeric precursors: Special issue on high-permittivity dielectric oxides

Chemical vapor deposition, 2006, Vol.12 (2-3), p.172-180

2006

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A viable indicator approach for assessing sustainable forest management in terms of carbon emissions and removals

Electrical properties of (Ba,Sr)TiO3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes

Productivity of mixed versus pure stands of oak (Quercus petraea (Matt.) Liebl. and Quercus robur L.) and European beech (Fagus sylvatica L.) along an ecological gradient

Comparison of precursors for pulsed metal–organic chemical vapor deposition of HfO2 high-K dielectric thin films

SrTa 2 O 6 thin films for high- K dielectric applications grown by chemical vapor deposition on different substrates

Electrical properties of ( Ba , Sr ) Ti O 3 thin films revisited: The caseof chemical vapor deposited films on Pt electrodes

Guanidinate-Stabilized Monomeric Hafnium Amide Complexes as Promising Precursors for MOCVD of HfO2

Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition

Synthesis and characterisation of zirconium-amido guanidinato complex: a potential precursor for ZrO2 thin films

Investigation of radiation damage by X-ray diffraction

Liquid injection MOCVD of TiO2 and SrTiO3 thin films from [Ti(OPri)2 (tbaoac)2] : Film properties and compatibility with [Sr(thd)2]

Thin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors

Mononuclear precursor for MOCVD of HfO2 thin films

LI-MOCVD of HfO2 thin films using engineered amide based Hf precursors

Liquid injection MOCVD of TiO 2 and SrTiO 3 thin films from [Ti(OPr i ) 2(tbaoac) 2]: Film properties and compatibility with [Sr(thd) 2]

Liquid-Injection MOCVD of ZrO2 Thin Films using Zirconium Bis(diethlyamido)-bis(di-tert-butylmalonato) as a Novel Precursor

Guanidinate-Stabilized Monomeric Hafnium Amide Complexes as Promising Precursors for MOCVD of HfO 2

LI-MOCVD of HfO 2 thin films using engineered amide based Hf precursors

Synthesis and characterisation of zirconium–amido guanidinato complex: a potential precursor for ZrO 2 thin films

Mononuclear Mixed β-Ketoester-alkoxide Compound of Titanium as a Promising Precursor for Low-Temperature MOCVD of TiO2 Thin Films

MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors

Advanced chemical deposition techniques - from research to production

Mononuclear precursor for MOCVD of HfO2 thin filmsElectronic supplementary information (ESI) available: TG/DTA, and isothermal studies, RBS and AFM data of HfO2 film. See http://www.rsc.org/suppdata/cc/b4/b405015k

SrTa{sub 2}O{sub 6} thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates

MOCVD of ZrO2 and HfO2 thin films from modified monomeric precursors: Special issue on high-permittivity dielectric oxides

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