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Sufficient condition for a quantum state to be genuinely quantum non-Gaussian

New journal of physics, 2018-02, Vol.20 (2), p.23046

2018

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Representation-free description of atom interferometers in time-dependent linear potentials

New journal of physics, 2019-07, Vol.21 (7), p.73031

2019

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Synthesis of Electromagnetic Pulses with Different Frequency Bands in Free Space

Journal of communications technology & electronics, 2020-05, Vol.65 (5), p.480-494

2020

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T3 Stern-Gerlach Matter-Wave Interferometer

Physical review letters, 2019-08, Vol.123 (8), p.1

2019

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T 3 Stern-Gerlach Matter-Wave Interferometer

Physical review letters, 2019-08, Vol.123 (8), Article 083601

2019

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Observation of nonspreading wave packets in an imaginary potential

Physical review letters, 2005-09, Vol.95 (11), p.110405-110405, Article 110405

2005

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Four-Channel Former of Bipolar Pulses of Various Durations in a Circuit with One Spark Gap

Russian physics journal, 2023-12, Vol.66 (8), p.906-913

2023

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On the applicability of self-consistent global model for the characterization of Cl2/Ar inductively coupled plasma

Microelectronic engineering, 2007, Vol.84 (1), p.136-143

2007

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Melatonin and its bioisosteres as potential therapeutic agents for the treatment of retinopathy of prematurity

Chemical biology & drug design, 2024-03, Vol.103 (3), p.e14504-n/a

2024

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A low-impedance high-voltage bipolar pulse former

Instruments and experimental techniques (New York), 2017-07, Vol.60 (4), p.541-544

Efremov, A. M.

2017

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Parameters of Gaseous Phase and Kinetics of Reactive Ion Etching of SiO2 in CF4/C4F8/Ar/He Plasma

Russian microelectronics, 2022-12, Vol.51 (6), p.480-487

2022

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The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma

Russian microelectronics, 2023-10, Vol.52 (5), p.372-378

2023

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Parameters and Composition of Plasma in a CF4 + H2 + Ar Mixture: Effect of CF4/H2 Ratio

Russian microelectronics, 2024-02, Vol.53 (1), p.70-78

2024

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Erratum: Sufficient condition for a quantum state to be genuinely quantum non-Gaussian (2018 New J. Phys. 20 023046)

New journal of physics, 2018-03, Vol.20 (3), p.39601

2018

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Excitation Pulse Selection for UWB Antenna

Russian physics journal, 2023-12, Vol.66 (9), p.1005-1010

2023

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Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures

Russian microelectronics, 2023-08, Vol.52 (4), p.267-275

2023

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Kinetics of Reactive Ion Etching of Si, SiO2, and Si3N4 in C4F8 + O2 + Ar Plasma: Effect of the C4F8/O2 Mixing Ratio

Russian microelectronics, 2021-03, Vol.50 (2), p.92-101

2021

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On the Effect of the Cl2 + O2 + Ar Mixture Composition on the Concentrations of Chlorine and Oxygen Atoms in a Plasma

Russian microelectronics, 2022, Vol.51 (6), p.497-504

2022

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Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture

Russian microelectronics, 2023-04, Vol.52 (2), p.99-106

2023

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A High-Power Source of Ultrawideband Radiation of Subnanosecond Duration with Controllable Characteristics

Instruments and experimental techniques (New York), 2023-06, Vol.66 (3), p.394-401

2023

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Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy

Russian microelectronics, 2023, Vol.52 (1), p.1-8

2023

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On the Mechanisms Regulating the Plasma Composition and Kinetics of Heterogeneous Processes in a CF4 + CHF3 + Ar Mixture

Russian microelectronics, 2022-10, Vol.51 (5), p.302-310

2022

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Plasma Parameters and Kinetics of Reactive-Ion Etching of Silicon in a C6F12O + Ar Mixture

Russian microelectronics, 2022-08, Vol.51 (4), p.247-254

2022

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Peculiarities of the Kinetics of Heterogeneous Processes during the Etching of Silicon in CF4 and C2Br2F4 Plasma

Russian microelectronics, 2022, Vol.51 (6), p.505-511

2022

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Mechanisms of Plasma Etching of Titanium, Indium, Tin, and Zinc Oxides in a Mixture of HBr + Ar

Russian microelectronics, 2021-11, Vol.50 (6), p.379-386

2021

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Sufficient condition for a quantum state to be genuinely quantum non-Gaussian

Representation-free description of atom interferometers in time-dependent linear potentials

Synthesis of Electromagnetic Pulses with Different Frequency Bands in Free Space

T3 Stern-Gerlach Matter-Wave Interferometer

T 3 Stern-Gerlach Matter-Wave Interferometer

Observation of nonspreading wave packets in an imaginary potential

Four-Channel Former of Bipolar Pulses of Various Durations in a Circuit with One Spark Gap

On the applicability of self-consistent global model for the characterization of Cl2/Ar inductively coupled plasma

Melatonin and its bioisosteres as potential therapeutic agents for the treatment of retinopathy of prematurity

A low-impedance high-voltage bipolar pulse former

Parameters of Gaseous Phase and Kinetics of Reactive Ion Etching of SiO2 in CF4/C4F8/Ar/He Plasma

The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma

Parameters and Composition of Plasma in a CF4 + H2 + Ar Mixture: Effect of CF4/H2 Ratio

Erratum: Sufficient condition for a quantum state to be genuinely quantum non-Gaussian (2018 New J. Phys. 20 023046)

Excitation Pulse Selection for UWB Antenna

Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures

Kinetics of Reactive Ion Etching of Si, SiO2, and Si3N4 in C4F8 + O2 + Ar Plasma: Effect of the C4F8/O2 Mixing Ratio

On the Effect of the Cl2 + O2 + Ar Mixture Composition on the Concentrations of Chlorine and Oxygen Atoms in a Plasma

Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture

A High-Power Source of Ultrawideband Radiation of Subnanosecond Duration with Controllable Characteristics

Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy

On the Mechanisms Regulating the Plasma Composition and Kinetics of Heterogeneous Processes in a CF4 + CHF3 + Ar Mixture

Plasma Parameters and Kinetics of Reactive-Ion Etching of Silicon in a C6F12O + Ar Mixture

Peculiarities of the Kinetics of Heterogeneous Processes during the Etching of Silicon in CF4 and C2Br2F4 Plasma

Mechanisms of Plasma Etching of Titanium, Indium, Tin, and Zinc Oxides in a Mixture of HBr + Ar

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