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High-Operating Temperature HgCdTe: A Vision for the Near Future

Journal of electronic materials, 2016-09, Vol.45 (9), p.4587-4595

2016

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Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures

Journal of electronic materials, 2022-09, Vol.51 (9), p.4714-4720

2022

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Small-Pitch HgCdTe Photodetectors

Journal of electronic materials, 2014-08, Vol.43 (8), p.3041-3046

2014

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Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates

Journal of electronic materials, 2012-10, Vol.41 (10), p.2719-2724

2012

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Measurement of Minority Carrier Lifetime in n-Type MBE HgCdTe on Variable Substrates

Journal of electronic materials, 2012-10, Vol.41 (10), p.2785-2789

2012

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Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

Journal of electronic materials, 2017-09, Vol.46 (9), p.5374-5378

2017

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Substrate-Removed HgCdTe-Based Focal-Plane Arrays for Short-Wavelength Infrared Astronomy

Journal of electronic materials, 2008-09, Vol.37 (9), p.1396-1400

2008

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Model for minority carrier lifetimes in doped HgCdTe

Journal of electronic materials, 2005-06, Vol.34 (6), p.873-879

2005

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Surface structure of molecular beam epitaxy (211)B HgCdTe

Journal of electronic materials, 2007-08, Vol.36 (8), p.949-957

2007

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Improved model for the analysis of FTIR transmission spectra from multilayer HgCdTe structures

Journal of electronic materials, 2005-06, Vol.34 (6), p.762-767

2005

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Status of LWIR HgCdTe-on-Silicon FPA Technology

Journal of electronic materials, 2008-09, Vol.37 (9), p.1184-1188

2008

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Precise arsenic doping of HgCdTe by MBE and effects on compositional interdiffusion

Journal of electronic materials, 2006-06, Vol.35 (6), p.1346-1349

2006

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A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe ir detectors and focal plane arrays

Journal of electronic materials, 2001-06, Vol.30 (6), p.590-594

2001

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Fundamental materials studies of undoped, in-doped, and as-doped Hg1-xCdxTe

Journal of electronic materials, 2004-06, Vol.33 (6), p.728-736

2004

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Optical absorption properties of HgCdTe epilayers with uniform composition

Journal of electronic materials, 2003-07, Vol.32 (7), p.646-650

2003

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MCT-on-silicon negative luminescence devices with high efficiency

Journal of electronic materials, 2007-08, Vol.36 (8), p.988-992

2007

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Role of dislocation scattering on the electron mobility of n-type long wave length infrared HgCdTe on silicon

Journal of electronic materials, 2007-08, Vol.36 (8), p.1098-1105

2007

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Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arrays

Journal of electronic materials, 2002-07, Vol.31 (7), p.669-676

2002

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Control of very-long-wavelength infrared HgCdTe detector-cutoff wavelength

Journal of electronic materials, 2002-07, Vol.31 (7), p.664-668

2002

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LWIR HgCdTe on Si detector performance and analysis

Journal of electronic materials, 2006-06, Vol.35 (6), p.1417-1422

2006

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Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance

Journal of electronic materials, 2004-06, Vol.33 (6), p.531-537

2004

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Ten-inch molecular beam epitaxy production system for HgCdTe growth

Journal of electronic materials, 2005-06, Vol.34 (6), p.891-897

2005

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Microscopic defects on MBE grown LWIR Hg1−xCdxTe material and their impact on device performance

Journal of electronic materials, 1999-06, Vol.28 (6), p.649-653

1999

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Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1-xCdxTe grown by molecular beam epitaxy

Journal of electronic materials, 2006-06, Vol.35 (6), p.1360-1368

2006

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Oral administration of a Spirulina extract enriched for Braun-type lipoproteins protects mice against influenza A (H1N1) virus infection

Phytomedicine (Stuttgart), 2015-02, Vol.22 (2), p.271-276

2015

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High-Operating Temperature HgCdTe: A Vision for the Near Future

Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures

Small-Pitch HgCdTe Photodetectors

Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates

Measurement of Minority Carrier Lifetime in n-Type MBE HgCdTe on Variable Substrates

Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

Substrate-Removed HgCdTe-Based Focal-Plane Arrays for Short-Wavelength Infrared Astronomy

Model for minority carrier lifetimes in doped HgCdTe

Surface structure of molecular beam epitaxy (211)B HgCdTe

Improved model for the analysis of FTIR transmission spectra from multilayer HgCdTe structures

Status of LWIR HgCdTe-on-Silicon FPA Technology

Precise arsenic doping of HgCdTe by MBE and effects on compositional interdiffusion

A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe ir detectors and focal plane arrays

Fundamental materials studies of undoped, in-doped, and as-doped Hg1-xCdxTe

Optical absorption properties of HgCdTe epilayers with uniform composition

MCT-on-silicon negative luminescence devices with high efficiency

Role of dislocation scattering on the electron mobility of n-type long wave length infrared HgCdTe on silicon

Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arrays

Control of very-long-wavelength infrared HgCdTe detector-cutoff wavelength

LWIR HgCdTe on Si detector performance and analysis

Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance

Ten-inch molecular beam epitaxy production system for HgCdTe growth

Microscopic defects on MBE grown LWIR Hg1−xCdxTe material and their impact on device performance

Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1-xCdxTe grown by molecular beam epitaxy

Oral administration of a Spirulina extract enriched for Braun-type lipoproteins protects mice against influenza A (H1N1) virus infection

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