UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

Proceedings of the IEEE, 1991-05, Vol.79 (5), p.677-701

1991

Volltextzugriff (PDF)

Progress in SiC: from material growth to commercial device development

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.1-8

1999

Volltextzugriff (PDF)

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

Electronics letters, 1997-08, Vol.33 (18), p.1556

1997

Volltextzugriff (PDF)

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Journal of crystal growth, 1997-05, Vol.175-176, p.72-78

1997

Volltextzugriff (PDF)

Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

Materials science & engineering. B, Solid-state materials for advanced technology, 1988-08, Vol.1 (1), p.77-104

1988

Volltextzugriff (PDF)

Impact of sulfur substituents on the C–H⋯O interaction of terminal alkynes in crystal engineering

CrystEngComm, 2007, Vol.9 (11), p.1041

2007

Volltextzugriff (PDF)

MBE growth and properties of GaN on GaN/SiC substrates

Solid-state electronics, 1997-02, Vol.41 (2), p.213-218

1997

Volltextzugriff (PDF)

6H-silicon carbide devices and applications

Physica. B, Condensed matter, 1993-04, Vol.185 (1), p.461-465

1993

Volltextzugriff (PDF)

Silicon carbide UV photodiodes

IEEE transactions on electron devices, 1993-02, Vol.40 (2), p.325-333

1993

Volltextzugriff (PDF)

Optical reflectivity of 3C and 4H-SiC polytypes : theory and experiment

Applied physics letters, 1993-11, Vol.63 (20), p.2747-2749

1993

Volltextzugriff (PDF)

Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide

Diamond and related materials, 1992-03, Vol.1 (2), p.109-120

1992

Volltextzugriff (PDF)

4-Ethynyl-1,2-methylenedioxybenzene at 150 K

Acta crystallographica. Section C, Crystal structure communications, 2001-04, Vol.57 (4), p.412-413

2001

Volltextzugriff (PDF)

Demonstrating the potential of 6-H silicon carbide for power devices

IEEE transactions on electron devices, 1993-11, Vol.40 (11), p.2129-2130

1993

Volltextzugriff (PDF)

A Critical Comparison Between Movpe and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications

MRS proceedings, 1998, Vol.537, Article G5.10

1998

Volltextzugriff (PDF)

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

MRS proceedings, 1998, Vol.537, Article G4.3

1998

Volltextzugriff (PDF)

A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.594-599

1999

Volltextzugriff (PDF)

Demonstrating the potential of 6h-silicon carbide for power devices

51st Annual Device Research Conference, 1993, p.114-115

1993

Volltextzugriff (PDF)

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.447-452

1999

Volltextzugriff (PDF)

Amorphization And Recrystallization Processes In Monocrystaline Beta Silicon Carbide Thin Films

MRS proceedings, 1985, Vol.51, Article 395

1985

Volltextzugriff (PDF)

Optimized conditions for flow modulation epitaxy of GaN

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application, 1997, p.13-14

1997

Volltextzugriff (PDF)

The Iron Age Enclosures and Prehistoric Landscape of Sutton Common, South Yorkshire

Proceedings of the Prehistoric Society, 1997, Vol.63, p.221-259

1997

Volltextzugriff (PDF)

Cross-Sectional Transmission Electron Microscopy of Defects in Beta Silicon Carbide Thin Films

MRS proceedings, 1985, Vol.46, Article 593

1985

Volltextzugriff (PDF)

A review of the status of diamond and silicon carbide devices for high-power, -temperature, and -frequency applications

International Technical Digest on Electron Devices, 1990, p.785-788

1990

Volltextzugriff (PDF)

6H–silicon carbide devices and applications

Wide-Band-Gap Semiconductors, 1993, p.461-465

1993

Volltextzugriff (PDF)

Blue/UV Emitters From SiC And Its Alloys

LEOS 1993 Summer Topical Meeting Digest on Optical Microwave Interactions/Visible Semiconductor Lasers/Impact of Fiber Nonlinearities on Lightwave Systems/Hybrid Optoelectronic Integration and Packagi, 1993, p.V16-V17

1993

Volltextzugriff (PDF)

1 – 25 von 61

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(44)
Mit Volltextzugriff
(48)

Publikationsform

Sprache

Englisch
(61)

Erscheinungsjahr

n.n

Thema

Science & Technology
(41)
Technology
(19)
Life Sciences & Biomedicine
(17)
Physical Sciences
(17)
Humans
(13)
Engineering
(11)
Physics
(11)
Silicon Carbide
(11)
Exact Sciences And Technology
(10)
Female
(9)
Materials Science
(9)
Chemistry
(8)
Engineering, Electrical & Electronic
(8)
Materials Science, Multidisciplinary
(7)
Temperature
(7)
Biological And Medical Sciences
(6)
Conductivity
(5)
Substrates
(5)
Animals
(4)
Applied Sciences
(4)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

Progress in SiC: from material growth to commercial device development

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

Impact of sulfur substituents on the C–H⋯O interaction of terminal alkynes in crystal engineering

MBE growth and properties of GaN on GaN/SiC substrates

6H-silicon carbide devices and applications

Silicon carbide UV photodiodes

Optical reflectivity of 3C and 4H-SiC polytypes : theory and experiment

Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide

4-Ethynyl-1,2-methylenedioxybenzene at 150 K

Demonstrating the potential of 6-H silicon carbide for power devices

A Critical Comparison Between Movpe and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications

Demonstrating the potential of 6h-silicon carbide for power devices

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

Amorphization And Recrystallization Processes In Monocrystaline Beta Silicon Carbide Thin Films

Optimized conditions for flow modulation epitaxy of GaN

The Iron Age Enclosures and Prehistoric Landscape of Sutton Common, South Yorkshire

Cross-Sectional Transmission Electron Microscopy of Defects in Beta Silicon Carbide Thin Films

A review of the status of diamond and silicon carbide devices for high-power, -temperature, and -frequency applications

6H–silicon carbide devices and applications

Blue/UV Emitters From SiC And Its Alloys

Suchergebnisse filtern