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Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect

Physical review letters, 2013-08, Vol.111 (7), p.077402-077402

2013

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Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Applied physics letters, 2013-08, Vol.103 (8), p.82110

2013

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Design of Gallium Nitride Resonant Cavity Light-Emitting Diodes on Si Substrates

Advanced materials (Weinheim), 2008-01, Vol.20 (1), p.115-118

2008

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Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas

Nano letters, 2012-04, Vol.12 (4), p.1749-1756

2012

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Effect of GaN surface treatment on Al2O3/ n -GaN MOS capacitors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-11, Vol.33 (6)

2015

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Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate

Physical review. B, 2019-02, Vol.99 (8), p.085440, Article 085440

2019

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Assembly of phosphonic acids on GaN and AlGaN

Journal of physics. D, Applied physics, 2010-01, Vol.43 (1), p.015303-015303 (5)

2010

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Plasma-based chemical modification of epitaxial graphene with oxygen functionalities

Surface & coatings technology, 2014-02, Vol.241, p.8-12

2014

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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Journal of crystal growth, 2009, Vol.311 (2), p.238-243

2009

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Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

Scripta materialia, 2014-12, Vol.93, p.44-47

2014

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Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.565-568

2014

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Graphene Formation on SiC Substrates

Materials science forum, 2009-03, Vol.615-617, p.211-214

2009

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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface

Surface science, 2013-11, Vol.617, p.113-117

2013

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Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN

Physica status solidi. C, 2014-04, Vol.11 (3-4), p.898-901

2014

Volltextzugriff (PDF)

Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate

Physical review. B, 2019-02, Vol.99 (8)

2019

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A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

Materials science forum, 2010-04, Vol.645-648, p.271-276

2010

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Investigation of three-step epilayer growth approach of GaN films to minimize compensation

Journal of electronic materials, 2005-09, Vol.34 (9), p.1187-1192

2005

Volltextzugriff (PDF)

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

Materials science forum, 2010-04, Vol.645-648, p.211-214

2010

Volltextzugriff (PDF)

Rare-earth chloride seeded growth of GaN nano- and micro-crystals

Applied surface science, 2007-05, Vol.253 (14), p.6157-6161

2007

Volltextzugriff (PDF)

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

Materials science forum, 2009, Vol.600-603, p.317-320

2009

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Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Journal of crystal growth, 2007-06, Vol.304 (1), p.103-107

2007

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Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

Materials science forum, 2010-04, Vol.645-648, p.203-206

2010

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Materials science. Silicon carbide as a platform for power electronics

Science (American Association for the Advancement of Science), 2009-06, Vol.324 (5933), p.1398-1400

2009

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Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC

Journal of electronic materials, 2008-05, Vol.37 (5), p.685-690

2008

Volltextzugriff (PDF)

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

Materials science forum, 2009-01, Vol.600-603, p.481-484

2009

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Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect

Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Design of Gallium Nitride Resonant Cavity Light-Emitting Diodes on Si Substrates

Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas

Effect of GaN surface treatment on Al2O3/ n -GaN MOS capacitors

Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate

Assembly of phosphonic acids on GaN and AlGaN

Plasma-based chemical modification of epitaxial graphene with oxygen functionalities

Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN

Graphene Formation on SiC Substrates

Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface

Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN

Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

Investigation of three-step epilayer growth approach of GaN films to minimize compensation

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

Rare-earth chloride seeded growth of GaN nano- and micro-crystals

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

Materials science. Silicon carbide as a platform for power electronics

Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

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