UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 218

Sortiert nach

Atomically-resolved interlayer charge ordering and its interplay with superconductivity in YBa2Cu3O6.81

Nature communications, 2021-06, Vol.12 (1), p.3893-3893, Article 3893

2021

Volltextzugriff (PDF)

Atomic resolution in tunneling induced light emission from GaAs(110)

Applied physics letters, 2010-04, Vol.96 (15), p.152107-152107-3

2010

Volltextzugriff (PDF)

Counting Point Defects at Nanoparticle Surfaces by Electron Holography

Nano letters, 2022-09, Vol.22 (17), p.6936-6941

2022

Volltextzugriff (PDF)

Non-polar group-III nitride semiconductor surfaces

Physica status solidi. PSS-RRL. Rapid research letters, 2012-10, Vol.6 (9-10), p.359-369

2012

Volltextzugriff (PDF)

Composition dependence of intrinsic surface states and Fermi-level pinning at ternary Al x Ga1− x N m -plane surfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-03, Vol.42 (2)

2024

Volltextzugriff (PDF)

Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-03, Vol.42 (2)

2024

Volltextzugriff (PDF)

Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns

ACS nano, 2018-09, Vol.12 (9), p.9355-9362

2018

Volltextzugriff (PDF)

Photodriven Dipole Reordering: Key to Carrier Separation in Metalorganic Halide Perovskites

ACS nano, 2019-04, Vol.13 (4), p.4402-4409

2019

Volltextzugriff (PDF)

Electrostatic Shaping of Magnetic Transition Regions in La 0.7 Sr 0.3 MnO 3

Physical review letters, 2022-07, Vol.129 (5), Article 057201

2022

Volltextzugriff (PDF)

Electrostatic extension of magnetic proximity effect in La 0.7 Sr 0.3 Mn O 3

Physical review. B, 2023-11, Vol.108 (18), Article L180410

2023

Volltextzugriff (PDF)

Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy

Applied physics letters, 2022-11, Vol.121 (19)

2022

Volltextzugriff (PDF)

Multi-modal and multi-scale non-local means method to analyze spectroscopic datasets

Ultramicroscopy, 2020-02, Vol.209, p.112877-112877, Article 112877

2020

Volltextzugriff (PDF)

Cover Picture: Non-polar group-III nitride semiconductor surfaces (Phys. Status Solidi RRL 9-10/2012)

Physica status solidi. PSS-RRL. Rapid research letters, 2012-10, Vol.6 (9-10), p.n/a

2012

Volltextzugriff (PDF)

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

ACS nano, 2018-02, Vol.12 (2), p.1089-1095

2018

Volltextzugriff (PDF)

Composition modulation by twinning in InAsSb nanowires

Nanotechnology, 2019-08, Vol.30 (32), p.324005-324005

2019

Volltextzugriff (PDF)

Theater als Kritik: Theorie, Geschichte und Praktiken der Ent-Unterwerfung

1, 2018

Volltextzugriff (PDF)

Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls

Nanotechnology, 2019-08, Vol.30 (32), p.324002-324002

2019

Volltextzugriff (PDF)

Valence band structure and effective masses of GaN ( 10 1 ¯ 0 )

Physical review. B, 2019-05, Vol.99 (19), p.195306, Article 195306

2019

Volltextzugriff (PDF)

Interplay of field-induced molecular dipole alignment and compensating surface polarization in low-temperature P − V hysteresis of MAPbBr 3 ( 001 )

Physical review materials, 2023-05, Vol.7 (5), Article L052401

2023

Volltextzugriff (PDF)

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Applied physics letters, 2013-09, Vol.103 (12), p.122104-1-4

2013

Volltextzugriff (PDF)

Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

Physical review materials, 2021-04, Vol.5 (4), Article 044601

2021

Volltextzugriff (PDF)

Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM

Philosophical magazine (Abingdon, England), 2018-12, Vol.98 (34), p.3072-3085

2018

Volltextzugriff (PDF)

Record Single-Mode, High-Power VCSELs by Inhibition of Spatial Hole Burning

IEEE journal of selected topics in quantum electronics, 2013-07, Vol.19 (4), p.1700913-1700913

2013

Volltextzugriff (PDF)

Electronic structure of β − Al 3 Mg 2 and Al 13 Fe 4 complex metallic alloys

Physical review. B, 2022-05, Vol.105 (20), Article 205107

2022

Volltextzugriff (PDF)

Lazarevicite-type short-range ordering in ternary III-V nanowires

Physical review. B, 2016-11, Vol.94 (19), Article 195306

2016

Volltextzugriff (PDF)

1 – 25 von 218

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(128)
Mit Volltextzugriff
(205)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(193)
Deutsch
(80)
Japanisch
(15)

Erscheinungsjahr

n.n

Thema

Science & Technology
(90)
Life Sciences & Biomedicine
(52)
Humans
(31)
Physical Sciences
(24)
Technology
(23)
Materials Science
(19)
Clinical Neurology
(18)
Neurosciences & Neurology
(18)
Physics
(17)
Female
(16)
Male
(16)
Physics, Applied
(15)
Science & Technology - Other Topics
(15)
Magnetic Resonance Imaging
(14)
Materials Science, Multidisciplinary
(14)
Patients
(12)
Theatre Studies
(12)
Adult
(11)
Gastroenterology & Hepatology
(11)
Middle Aged
(11)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Atomically-resolved interlayer charge ordering and its interplay with superconductivity in YBa2Cu3O6.81

Atomic resolution in tunneling induced light emission from GaAs(110)

Counting Point Defects at Nanoparticle Surfaces by Electron Holography

Non-polar group-III nitride semiconductor surfaces

Composition dependence of intrinsic surface states and Fermi-level pinning at ternary Al x Ga1− x N m -plane surfaces

Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces

Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns

Photodriven Dipole Reordering: Key to Carrier Separation in Metalorganic Halide Perovskites

Electrostatic Shaping of Magnetic Transition Regions in La 0.7 Sr 0.3 MnO 3

Electrostatic extension of magnetic proximity effect in La 0.7 Sr 0.3 Mn O 3

Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy

Multi-modal and multi-scale non-local means method to analyze spectroscopic datasets

Cover Picture: Non-polar group-III nitride semiconductor surfaces (Phys. Status Solidi RRL 9-10/2012)

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Composition modulation by twinning in InAsSb nanowires

Theater als Kritik: Theorie, Geschichte und Praktiken der Ent-Unterwerfung

Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls

Valence band structure and effective masses of GaN ( 10 1 ¯ 0 )

Interplay of field-induced molecular dipole alignment and compensating surface polarization in low-temperature P − V hysteresis of MAPbBr 3 ( 001 )

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM

Record Single-Mode, High-Power VCSELs by Inhibition of Spatial Hole Burning

Electronic structure of β − Al 3 Mg 2 and Al 13 Fe 4 complex metallic alloys

Lazarevicite-type short-range ordering in ternary III-V nanowires

Suchergebnisse filtern