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Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

Nano letters, 2013-07, Vol.13 (7), p.3237-3242

2013

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Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer

Nanoscale, 2020-03, Vol.12 (1), p.6121-6129

2020

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Comprehensive Analysis of Graphene Geometric Diodes: Role of Geometrical Asymmetry and Electrostatic Effects

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1294-1301

2024

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Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

Physical review. B, 2018-03, Vol.97 (12), Article 125310

2018

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On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field

IEEE transactions on electron devices, 2004-03, Vol.51 (3), p.394-401

Esseni, D.

2004

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IEEE_Xplore

Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions

Journal of applied physics, 2023-12, Vol.134 (21)

2023

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Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

Journal of applied physics, 2017-06, Vol.121 (24)

2017

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Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3646-3653

2018

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IEEE_Xplore

Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application

Physical review. B, 2020-07, Vol.102 (4), p.1, Article 045410

2020

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Correction: Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer

Nanoscale, 2020-06, Vol.12 (22), p.12177-12178

2020

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Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors

Solid-state electronics, 2014-08, Vol.98, p.63-69

2014

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Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1665-1674

2003

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IEEE_Xplore

Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3694-3699

2022

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IEEE_Xplore

Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2085-2092

2012

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IEEE_Xplore

Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs

IEEE electron device letters, 2012-06, Vol.33 (6), p.806-808

2012

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IEEE_Xplore

Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2445-2455

2003

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IEEE_Xplore

Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.593-599

2022

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Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2086-2096

2008

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IEEE_Xplore

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Journal of applied physics, 2012-08, Vol.112 (3)

2012

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Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions

2023 35th International Conference on Microelectronic Test Structure (ICMTS), 2023, p.1-6

2023

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IEEE_Xplore

On the Apparent Mobility in Nanometric n-MOSFETs

IEEE electron device letters, 2007-11, Vol.28 (11), p.1036-1039

2007

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IEEE_Xplore

Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model

Solid-state electronics, 2013-11, Vol.89, p.161-166

2013

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Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.255-258

2021

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Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2736-2743

2005

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IEEE_Xplore

Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.1980-1990

2009

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IEEE_Xplore

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Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer

Comprehensive Analysis of Graphene Geometric Diodes: Role of Geometrical Asymmetry and Electrostatic Effects

Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field

Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions

Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating

Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application

Correction: Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer

Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors

Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs

Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs

Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions

On the Apparent Mobility in Nanometric n-MOSFETs

Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model

Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions

Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

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