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Improved performance of carbon-doped GaAs base heterojunction bipolar transistors through the use of InGaP

Applied physics letters, 1992-08, Vol.61 (9), p.1092-1094

1992

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InGaP/GaAs based single and double heterojunction bipolar transistors grown by mombe

Electronics letters, 1992-06, Vol.28 (12), p.1150-1152

1992

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Damage introduction in InP and InGaAs during Ar and H2 plasma exposure

Applied physics letters, 1992-08, Vol.61 (5), p.586-588

1992

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Etching of InP by HCl in an OMVPE reactor

Journal of crystal growth, 1991, Vol.107 (1), p.203-208

1991

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Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base

IEEE electron device letters, 1988-09, Vol.9 (9), p.442-443

1988

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Long-term stability at 200 degrees C of implant-isolated GaAs

Semiconductor science and technology, 1993-04, Vol.8 (4), p.605-607

1993

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Evaluation of single ohmic metallisations for contacting both p- and n-type GaInAs

Electronics letters, 1990, Vol.26 (15), p.1127-1129

1990

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Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base

IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2443

1988

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High-speed metal-semiconductor-metal waveguide photodetector on InP

Applied physics letters, 1989, Vol.55 (21), p.2173-2175

1989

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GaAs via-hole etching and MOMBE regrowth

Semiconductor science and technology, 1992-06, Vol.7 (6), p.850-854

1992

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Waveguide integrated MSM photodetector on InP

Electronics letters, 1988, Vol.24 (24), p.1478-1480

1988

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Fully self-aligned microwave InP/GaInAs single heterojunction bipolar transistors

Electronics letters, 1989-01, Vol.25 (2), p.127-128

1989

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High-speed self-aligned InP/GaInAs double heterostructure bipolar transistor with high current-driving capability

Electronics letters, 1988, Vol.24 (20), p.1293-1294

1988

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Long-term stability at 200°C of implant-isolated GaAs

Semiconductor science and technology, 1993, Vol.8 (4), p.605-607

1993

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Long-term stability at 200 degree C of implant-isolated GaAs

Semiconductor science and technology, 1993-01, Vol.8 (4), p.605-607

1993

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InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

MRS proceedings, 1992, Vol.282, Article 33

1992

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Stereotactic hypofractionated accurate radiotherapy of the prostate (SHARP), 33.5 Gy in five fractions for localized disease: First clinical trial results

International journal of radiation oncology, biology, physics, 2007-03, Vol.67 (4), p.1099-1105

2007

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Etching of InP HCl in an OMVPE reactor

Journal of crystal growth, 1990, Vol.107 (1-4), p.203-208

1990

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Waveguide integrated MSM photodetector for the 1.3 mu m-1.6 mu m wavelength range

Technical Digest., International Electron Devices Meeting, 1988, p.483-486

1988

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Ion Implantation Technology For III-V Heterojunction Devices

Ion Implantation Technology - 92, 1993, p.421-424

1993

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Intrafractional stability of the prostate using a stereotactic radiotherapy technique

International journal of radiation oncology, biology, physics, 2003-12, Vol.57 (5), p.1285-1291

2003

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Comparison of rectal dose volume histograms for definitive prostate radiotherapy among stereotactic radiotherapy, IMRT, and 3D-CRT techniques

International journal of radiation oncology, biology, physics, 2004-09, Vol.60, p.S633-S633

2004

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Intrafractional stability of frameless fractionated stereotactic radiation therapy or IMRT using implanted cranial fiducials

International journal of radiation oncology, biology, physics, 2004-09, Vol.60, p.S618-S619

2004

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Improved performance of carbon-doped GaAs base heterojunction bipolar transistors through the use of InGaP

InGaP/GaAs based single and double heterojunction bipolar transistors grown by mombe

Damage introduction in InP and InGaAs during Ar and H2 plasma exposure

Etching of InP by HCl in an OMVPE reactor

Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base

Long-term stability at 200 degrees C of implant-isolated GaAs

Evaluation of single ohmic metallisations for contacting both p- and n-type GaInAs

Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base

High-speed metal-semiconductor-metal waveguide photodetector on InP

GaAs via-hole etching and MOMBE regrowth

Waveguide integrated MSM photodetector on InP

Fully self-aligned microwave InP/GaInAs single heterojunction bipolar transistors

High-speed self-aligned InP/GaInAs double heterostructure bipolar transistor with high current-driving capability

Long-term stability at 200°C of implant-isolated GaAs

Long-term stability at 200 degree C of implant-isolated GaAs

InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

Stereotactic hypofractionated accurate radiotherapy of the prostate (SHARP), 33.5 Gy in five fractions for localized disease: First clinical trial results

Etching of InP HCl in an OMVPE reactor

Waveguide integrated MSM photodetector for the 1.3 mu m-1.6 mu m wavelength range

Ion Implantation Technology For III-V Heterojunction Devices

Intrafractional stability of the prostate using a stereotactic radiotherapy technique

Comparison of rectal dose volume histograms for definitive prostate radiotherapy among stereotactic radiotherapy, IMRT, and 3D-CRT techniques

Intrafractional stability of frameless fractionated stereotactic radiation therapy or IMRT using implanted cranial fiducials

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