UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 425

Sortiert nach

Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors

Journal of applied physics, 2010-12, Vol.108 (12)

2010

Volltextzugriff (PDF)

Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1826-1829

2009

Volltextzugriff (PDF)

Bordetella pertussis iron regulated proteins as potential vaccine components

Vaccine, 2013-08, Vol.31 (35), p.3543-3548

2013

Volltextzugriff (PDF)

Die Bedeutung des HR-Risikomanagements

Zeitschrift Führung + Organisation, 2024-05 (3), p.180-186

2024

Volltextzugriff (PDF)

Synthesis, conformational studies and NBO analysis of (4-chloro-3,5-dimethyl-1H-pyrazol- 1-yl)(p-tolyl)methanone

Journal of molecular structure, 2019-09, Vol.1191, p.152-157

2019

Volltextzugriff (PDF)

Inline-Characterization and Step Coverage Optimization of Deposited Dielectrics in DRAM Structures

IEEE transactions on semiconductor manufacturing, 2013-05, Vol.26 (2), p.253-259

2013

Volltextzugriff (PDF)

Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layers

Journal of applied physics, 2009-08, Vol.106 (3)

2009

Volltextzugriff (PDF)

Reliability of Al 2 O 3 -doped ZrO 2 high- k dielectrics in three-dimensional stacked metal-insulator-metal capacitors

Journal of applied physics, 2010-12, Vol.108 (12), p.124104-124104-5

2010

Volltextzugriff (PDF)

Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), 2014, p.86-89

2014

Volltextzugriff (PDF)

First Insight Into the Lifetime Acceleration Model of High-[Formula Omitted] [Formula Omitted] Stacks for Advanced DRAM Technology Nodes

IEEE electron device letters, 2009-04, Vol.30 (4), p.340

2009

Volltextzugriff (PDF)

First Insight Into the Lifetime Acceleration Model of High- k \hbox/\hbox/\hbox Stacks for Advanced DRAM Technology Nodes

IEEE electron device letters, 2009-04, Vol.30 (4), p.340-342

2009

Volltextzugriff (PDF)

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.2.2.1-2.2.4

2016

Volltextzugriff (PDF)

Influence of N 2 and NH 3 annealing on the nitrogen incorporationand k -value of thin ZrO 2 layers

Journal of applied physics, 2009-08, Vol.106 (3), p.034107-034107-7

2009

Volltextzugriff (PDF)

First Insight Into the Lifetime Acceleration Model of High- k hbox ZrO 2 / hbox SiO 2 / hbox ZrO 2 Stacks for Advanced DRAM Technology Nodes

IEEE electron device letters, 2009-01, Vol.30 (4)

2009

Volltextzugriff (PDF)

Impact of interface variations on @@iJ@-@@iV@ and @@iC@-@@iV@ polarity asymmetry of MIM capacitors with amorphous and crystalline Zr@@d(1-@@@i@@dx@@@@d)@Al@@i@@dx@@O@@d2@ films

Microelectronic engineering, 2009-09, Vol.86 (7-9), p.1826-1829

2009

Volltextzugriff (PDF)

Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1826-1829

2009

Volltextzugriff (PDF)

Impact of interface variations on J– V and C– V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr (1− x )Al x O 2 films

Microelectronic engineering, 2009, Vol.86 (7), p.1826-1829

2009

Volltextzugriff (PDF)

Uber die Reinigung von Silicium durch Transportreaktionen

Zeitschrift für anorganische und allgemeine Chemie (1950), 1961-04, Vol.309 (5-6), p.297-303

1961

Volltextzugriff (PDF)

Methyl Fluorocarbonyl Disulfide (FC(O)SSMe): A Theoretical Study on the Structural and Conformational Properties of Its Neutral Ground State and Lowest-Lying Cationic State

Helvetica chimica acta, 2003-07, Vol.86 (7), p.2379-2395

2003

Volltextzugriff (PDF)

Selection of a black chrome bath for continuous tube-plating and the properties of the coatings deposited from it

Solar energy, 1981, Vol.27 (2), p.115-120

1981

Volltextzugriff (PDF)

Skin technology—An industrial application of space processing

Acta astronautica, 1978-01, Vol.5 (9), p.625-635

1978

Volltextzugriff (PDF)

Development of new selective absorber coatings for high-temperature applications

Solar energy materials, 1983-10, Vol.9 (3), p.281-292

1983

Volltextzugriff (PDF)

Solar-selective absorber coatings for high-temperature application

Industrial & engineering chemistry product research and development, 1984-10, Vol.23 (4), p.659-661

1984

Volltextzugriff (PDF)

Impact of process parameters of TiN cap formation on threshold voltage and gate leakage in HKMG last integration

2012 International Semiconductor Conference Dresden-Grenoble (ISCDG), 2012, p.173-174

2012

Volltextzugriff (PDF)

Uber die Reinigung von Silicium durch Transportreaktionen

Zeitschrift für anorganische und allgemeine Chemie (1950), 1961-04, Vol.309 (5-6), p.297-303

1961

Volltextzugriff (PDF)

1 – 25 von 425

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(340)
Mit Volltextzugriff
(391)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

2 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors

Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films

Bordetella pertussis iron regulated proteins as potential vaccine components

Die Bedeutung des HR-Risikomanagements

Synthesis, conformational studies and NBO analysis of (4-chloro-3,5-dimethyl-1H-pyrazol- 1-yl)(p-tolyl)methanone

Inline-Characterization and Step Coverage Optimization of Deposited Dielectrics in DRAM Structures

Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layers

Reliability of Al 2 O 3 -doped ZrO 2 high- k dielectrics in three-dimensional stacked metal-insulator-metal capacitors

Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors

First Insight Into the Lifetime Acceleration Model of High-[Formula Omitted] [Formula Omitted] Stacks for Advanced DRAM Technology Nodes

First Insight Into the Lifetime Acceleration Model of High- k \hbox/\hbox/\hbox Stacks for Advanced DRAM Technology Nodes

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

Influence of N 2 and NH 3 annealing on the nitrogen incorporationand k -value of thin ZrO 2 layers

First Insight Into the Lifetime Acceleration Model of High- k hbox ZrO 2 / hbox SiO 2 / hbox ZrO 2 Stacks for Advanced DRAM Technology Nodes

Impact of interface variations on @@iJ@-@@iV@ and @@iC@-@@iV@ polarity asymmetry of MIM capacitors with amorphous and crystalline Zr@@d(1-@@@i@@dx@@@@d)@Al@@i@@dx@@O@@d2@ films

Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films

Impact of interface variations on J– V and C– V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr (1− x )Al x O 2 films

Uber die Reinigung von Silicium durch Transportreaktionen

Methyl Fluorocarbonyl Disulfide (FC(O)SSMe): A Theoretical Study on the Structural and Conformational Properties of Its Neutral Ground State and Lowest-Lying Cationic State

Selection of a black chrome bath for continuous tube-plating and the properties of the coatings deposited from it

Skin technology—An industrial application of space processing

Development of new selective absorber coatings for high-temperature applications

Solar-selective absorber coatings for high-temperature application

Impact of process parameters of TiN cap formation on threshold voltage and gate leakage in HKMG last integration

Uber die Reinigung von Silicium durch Transportreaktionen

Suchergebnisse filtern