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Experimental study and modeling of reverse-bias dark currents in PIN structures using amorphous and polymorphous silicon

Journal of applied physics, 2003-12, Vol.94 (11), p.7317-7327

2003

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A high-resolution scanning Kelvin probe microscope for contact potential measurements on the 100 nm scale

Review of scientific instruments, 1997-08, Vol.68 (8), p.3108-3111

1997

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Field-enhanced generation in hydrogenated amorphous silicon

Physical review. B, Condensed matter, 1998-06, Vol.57 (24), p.15349-15359

1998

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High electric-field amorphous silicon p - i - n diodes: Effect of the p -layer thickness

Journal of applied physics, 1994-12, Vol.76 (11), p.7415-7422

1994

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Acoustically induced optical second harmonic generation in hydrogenated amorphous silicon films

Journal of physics. D, Applied physics, 2003-03, Vol.36 (6), p.713-718

2003

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Anisotropic magnetic centres in hydrogenated microcrystalline and polymorphous silicon

Journal of non-crystalline solids, 2002, Vol.299, p.561-565

2002

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Thin-film semiconductors: new materials for future detectors

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1992-11, Vol.322 (3), p.457-463

Equer, B.

1992

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The origin of current gain under illumination in amorphous silicon n-i-p-i-n structures

Journal of applied physics, 2000-02, Vol.87 (4), p.1874-1881

2000

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High electric field forming of a-Si:H p-i-n diodes

Journal of non-crystalline solids, 1995-10, Vol.190 (1), p.67-73

1995

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Light induced defects in a-Si:H : Saturation or equilibrium?

Journal of non-crystalline solids, 1991, Vol.137, p.227-230

1991

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In-situ Kelvin probe and ellipsometry study of the doping of a-Si : H and a-SiC : H layers: : Correlation with solar cell parameters

Solar energy materials and solar cells, 1998-02, Vol.51 (2), p.145-153

1998

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Analytical compensation of stray capacitance effect in Kelvin probe measurements

Review of scientific instruments, 1995-11, Vol.66 (11), p.5272-5276

1995

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Device-quality polycrystalline silicon films deposited at low process temperatures by hot-wire chemical vapor deposition

Thin solid films, 1999-01, Vol.337 (1), p.248-252

1999

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Leakage current studies of thick a-Si:H detectors under high electric field conditions

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1996-10, Vol.380 (1), p.18-22

1996

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High electric field hole mobility in a-Si:H

Journal of non-crystalline solids, 1998-05, Vol.227-230, p.176-179

1998

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High Electric field effects on the Thermal Generation in Hydrogenated Amorphous Silicon

MRS proceedings, 1997, Vol.467, Article 185

1997

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Sensitivity measurements of thick amorphous-silicon p-i-n nuclear detectors

IEEE transactions on nuclear science, 1996-06, Vol.43 (3), p.1452-1457

1996

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Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition

Journal of non-crystalline solids, 2000-05, Vol.266, p.385-390

2000

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Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-08, Vol.41 (4), p.1014-1018

1994

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EBIC study of electron generation function in a-Si:H

Microscopy research and technique, 1994-08, Vol.28 (6), p.527-534

1994

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Contact potential measurements with a local Kelvin probe

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 2002-07, Vol.82 (11), p.1257-1266

2002

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The photoyield of CsI, amorphous silicon and organometallic reflective photocathode materials

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1994-04, Vol.343 (1), p.121-128

1994

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Deposition parameters and surface topography of a-Si:H thin films obtained by the RF glow discharge process

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-12, Vol.42 (1), p.105-109

1996

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Analysis of the Conduction Properties of a-Si:H n+-i-n+ Structures Via Accurate Computer Modelling

MRS proceedings, 1996, Vol.420, Article 233

1996

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Effect of primary ionization in amorphous silicon detectors

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1988-09, Vol.271 (3), p.574-584

1988

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Experimental study and modeling of reverse-bias dark currents in PIN structures using amorphous and polymorphous silicon

A high-resolution scanning Kelvin probe microscope for contact potential measurements on the 100 nm scale

Field-enhanced generation in hydrogenated amorphous silicon

High electric-field amorphous silicon p - i - n diodes: Effect of the p -layer thickness

Acoustically induced optical second harmonic generation in hydrogenated amorphous silicon films

Anisotropic magnetic centres in hydrogenated microcrystalline and polymorphous silicon

Thin-film semiconductors: new materials for future detectors

The origin of current gain under illumination in amorphous silicon n-i-p-i-n structures

High electric field forming of a-Si:H p-i-n diodes

Light induced defects in a-Si:H : Saturation or equilibrium?

In-situ Kelvin probe and ellipsometry study of the doping of a-Si : H and a-SiC : H layers: : Correlation with solar cell parameters

Analytical compensation of stray capacitance effect in Kelvin probe measurements

Device-quality polycrystalline silicon films deposited at low process temperatures by hot-wire chemical vapor deposition

Leakage current studies of thick a-Si:H detectors under high electric field conditions

High electric field hole mobility in a-Si:H

High Electric field effects on the Thermal Generation in Hydrogenated Amorphous Silicon

Sensitivity measurements of thick amorphous-silicon p-i-n nuclear detectors

Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition

Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

EBIC study of electron generation function in a-Si:H

Contact potential measurements with a local Kelvin probe

The photoyield of CsI, amorphous silicon and organometallic reflective photocathode materials

Deposition parameters and surface topography of a-Si:H thin films obtained by the RF glow discharge process

Analysis of the Conduction Properties of a-Si:H n+-i-n+ Structures Via Accurate Computer Modelling

Effect of primary ionization in amorphous silicon detectors

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