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High performance thin-film flip-chip InGaN-GaN light-emitting diodes

Applied physics letters, 2006-08, Vol.89 (7), p.071109-071109-3

2006

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Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes

Applied physics letters, 2006-12, Vol.89 (24)

2006

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Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient

Applied physics letters, 1993-01, Vol.62 (2), p.143-145

1993

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Monolithically integrated optical differential amplifiers for applications in smart pixel arrays

IEEE journal of quantum electronics, 1996-05, Vol.32 (5), p.770-777

1996

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Surface topography and step orientation during metalorganic vapor phase epitaxy of InP

Applied physics letters, 1995-03, Vol.66 (12), p.1472-1474

1995

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Investigation of optical losses in photoelastic and ridge waveguides in GaAs-AlGaAs heterostructures

IEEE photonics technology letters, 1996-06, Vol.8 (6), p.806-808, Article 806

1996

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Evolution of monolayer terrace topography during metalorganic chemical vapor deposition of (100) GaAs

Applied physics letters, 1993-08, Vol.63 (9), p.1228-1230

1993

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Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering

Applied physics letters, 1988-04, Vol.52 (17), p.1371-1373

1988

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Laser induced disordering of GaAs-AlGaAs superlattice and incorporation of Si impurity

Applied physics letters, 1986-11, Vol.49 (21), p.1447-1449

1986

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A monolithically integrated optical differential amplifier for applications in smart pixel arrays

IEEE photonics technology letters, 1995-07, Vol.7 (7), p.757-759

1995

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Effects of microcracking on AlxGa1-xAs-GaAs quantum well lasers grown on Si

Applied physics letters, 1988-09, Vol.53 (10), p.874-876

1988

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AlGaAs multiple-wavelength light-emitting bar grown by laser-assisted metalorganic chemical vapor deposition

Applied physics letters, 1988-05, Vol.52 (18), p.1499-1501

1988

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Mode behavior and high resolution spectra of circularly-symmetric GaAs-AlGaAs air-post vertical cavity surface emitting lasers

Applied physics letters, 1996-08, Vol.69 (6), p.722-724

1996

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Low-temperature operating life of continuous 300-K AlxGa1-xAs-GaAs quantum-well heterostructure lasers grown on Si

Journal of applied physics, 1991-05, Vol.69 (10), p.6844-6849

1991

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Monolithically integrated DBR laser, detector, and transparent waveguide fabricated in a single growth step

IEEE photonics technology letters, 1995-09, Vol.7 (9), p.1022-1024

1995

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Low threshold buried heterostructure quantum well diode lasers by laser-assisted disordering

Applied physics letters, 1987-06, Vol.50 (23), p.1637-1639

1987

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Low-threshold gain-guided coupled-stripe quantum well diode lasers by laser-assisted processing

Applied physics letters, 1987-08, Vol.51 (8), p.558-560

1987

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Multiple-wavelength diode laser superarray

IEEE journal of quantum electronics, 1990-04, Vol.26 (4), p.663-668

1990

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Far-field supermode patterns of a multiple-stripe quantum well heterostructure laser operated (∼7330 Å, 300 K) in an external grating cavity

Applied physics letters, 1984-08, Vol.45 (4), p.406-408

1984

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Low-threshold disorder-defined buried-heterostructure AlGaAs diode lasers by anisotropic diffusion of laser-incorporated Si

Applied physics letters, 1987-09, Vol.51 (10), p.731-733

1987

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Layer disordering of GaAs-AlGaAs superlattices by diffusion of laser-incorporated Si

Journal of applied physics, 1988-10, Vol.64 (7), p.3439-3444

1988

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Multiple wavelength Fabry–Pérot lasers fabricated by vacancy-enhanced quantum well disordering

Applied physics letters, 1995-10, Vol.67 (14), p.1978-1980

1995

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Supermodes of multiple-stripe quantum-well heterostructure laser diodes operated (cw, 300 K) in an external-grating cavity

Journal of applied physics, 1985-01, Vol.57 (5), p.1489-1494

1985

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Broad-band gain in optically pumped S2

IEEE journal of quantum electronics, 1983-11, Vol.19 (11), p.1686-1691

1983

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Mode-locked coupled-stripe quantum well laser operation (λ∼7350Å) in a tunable (△ħω∼37 meV>kT) external grating cavity

Applied physics letters, 1985-11, Vol.47 (10), p.1022-1023

1985

Volltextzugriff (PDF)

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High performance thin-film flip-chip InGaN-GaN light-emitting diodes

Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes

Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient

Monolithically integrated optical differential amplifiers for applications in smart pixel arrays

Surface topography and step orientation during metalorganic vapor phase epitaxy of InP

Investigation of optical losses in photoelastic and ridge waveguides in GaAs-AlGaAs heterostructures

Evolution of monolayer terrace topography during metalorganic chemical vapor deposition of (100) GaAs

Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering

Laser induced disordering of GaAs-AlGaAs superlattice and incorporation of Si impurity

A monolithically integrated optical differential amplifier for applications in smart pixel arrays

Effects of microcracking on AlxGa1-xAs-GaAs quantum well lasers grown on Si

AlGaAs multiple-wavelength light-emitting bar grown by laser-assisted metalorganic chemical vapor deposition

Mode behavior and high resolution spectra of circularly-symmetric GaAs-AlGaAs air-post vertical cavity surface emitting lasers

Low-temperature operating life of continuous 300-K AlxGa1-xAs-GaAs quantum-well heterostructure lasers grown on Si

Monolithically integrated DBR laser, detector, and transparent waveguide fabricated in a single growth step

Low threshold buried heterostructure quantum well diode lasers by laser-assisted disordering

Low-threshold gain-guided coupled-stripe quantum well diode lasers by laser-assisted processing

Multiple-wavelength diode laser superarray

Far-field supermode patterns of a multiple-stripe quantum well heterostructure laser operated (∼7330 Å, 300 K) in an external grating cavity

Low-threshold disorder-defined buried-heterostructure AlGaAs diode lasers by anisotropic diffusion of laser-incorporated Si

Layer disordering of GaAs-AlGaAs superlattices by diffusion of laser-incorporated Si

Multiple wavelength Fabry–Pérot lasers fabricated by vacancy-enhanced quantum well disordering

Supermodes of multiple-stripe quantum-well heterostructure laser diodes operated (cw, 300 K) in an external-grating cavity

Broad-band gain in optically pumped S2

Mode-locked coupled-stripe quantum well laser operation (λ∼7350Å) in a tunable (△ħω∼37 meV>kT) external grating cavity

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