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State of the art and future of electronic sources at terahertz frequencies

Electronics letters, 2010-12, Vol.46 (26), p.S8-S8

Eisele, H

2010

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480 GHz oscillator with an InP Gunn device

Electronics letters, 2010-03, Vol.46 (6), p.422-423

EISELE, H

2010

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From surface data to bulk properties: a case study for antiphase boundaries in GaP on Si(001)

Journal of physics. D, Applied physics, 2021-05, Vol.54 (20), p.205302

2021

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Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

Applied physics express, 2024-01, Vol.17 (1), p.16505

2024

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Third-Harmonic Power Extraction From InP Gunn Devices up to 455 GHz

IEEE microwave and wireless components letters, 2009-06, Vol.19 (6), p.416-418

Eisele, H.

2009

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Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Journal of applied physics, 2020-11, Vol.128 (18)

2020

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InP Gunn devices for 400-425 GHz

Electronics letters, 2006-03, Vol.42 (6), p.358-359

EISELE, H

2006

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High-ozone layers in the middle and upper troposphere above Central Europe: potential import from the stratosphere along the subtropical jet stream

Atmospheric chemistry and physics, 2011-09, Vol.11 (17), p.9343-9366

2011

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Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires

Nano letters, 2019-12, Vol.19 (12), p.8801-8805

2019

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355 GHz oscillator with GaAs TUNNETT diode

Electronics letters, 2005-03, Vol.41 (6), p.329-331

EISELE, H

2005

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Change of InAs/GaAs quantum dot shape and composition during capping

Journal of applied physics, 2008-12, Vol.104 (12), p.124301-124301-5

2008

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Submillimeter-wave InP Gunn devices

IEEE transactions on microwave theory and techniques, 2004-10, Vol.52 (10), p.2371-2378

2004

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Composition modulation by twinning in InAsSb nanowires

Nanotechnology, 2019-08, Vol.30 (32), p.324005-324005

2019

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Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs 1- x Sb x Shell on InAs Nanowires

Nano letters, 2019-12, Vol.19 (12), p.8801-8805

2019

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Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

Journal of applied physics, 2015-07, Vol.118 (3)

2015

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Dual Gunn device oscillator with 10 mW at 280 GHz

Electronics letters, 2007, Vol.43 (11), p.636-638

EISELE, H

2007

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Self-organized formation of GaSb/GaAs quantum rings

Physical review letters, 2008-12, Vol.101 (25), p.256101-256101, Article 256101

2008

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Drivers of reef fish assemblages in an upwelling region from the Eastern Tropical Pacific Ocean

Journal of fish biology, 2021-04, Vol.98 (4), p.1074-1090

2021

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Meandering of overgrown v-shaped defects in epitaxial GaN layers

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Lazarevicite-type short-range ordering in ternary III-V nanowires

Physical review. B, 2016-11, Vol.94 (19), Article 195306

2016

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Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation

Physical review. B, 2018-03, Vol.97 (11), Article 115433

2018

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Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy

Physical review. B, Condensed matter and materials physics, 2015-06, Vol.91 (23), Article 235418

2015

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Reverse mass transport during capping of In0.5Ga0.5As/GaAs quantum dots

Applied physics letters, 2012-12, Vol.101 (23)

2012

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State of the art and future of electronic sources at terahertz frequencies

480 GHz oscillator with an InP Gunn device

From surface data to bulk properties: a case study for antiphase boundaries in GaP on Si(001)

Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires

Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

Third-Harmonic Power Extraction From InP Gunn Devices up to 455 GHz

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

InP Gunn devices for 400-425 GHz

High-ozone layers in the middle and upper troposphere above Central Europe: potential import from the stratosphere along the subtropical jet stream

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires

355 GHz oscillator with GaAs TUNNETT diode

Change of InAs/GaAs quantum dot shape and composition during capping

Submillimeter-wave InP Gunn devices

Composition modulation by twinning in InAsSb nanowires

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs 1- x Sb x Shell on InAs Nanowires

Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

Dual Gunn device oscillator with 10 mW at 280 GHz

Self-organized formation of GaSb/GaAs quantum rings

Drivers of reef fish assemblages in an upwelling region from the Eastern Tropical Pacific Ocean

Meandering of overgrown v-shaped defects in epitaxial GaN layers

Lazarevicite-type short-range ordering in ternary III-V nanowires

Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures

Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation

Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy

Reverse mass transport during capping of In0.5Ga0.5As/GaAs quantum dots

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