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Silicon Carbide as a Platform for Power Electronics

Science (American Association for the Advancement of Science), 2009-06, Vol.324 (5933), p.1398-1400

2009

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Electronics letters, 2014-01, Vol.50 (3), p.197-198

2014

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Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

Journal of crystal growth, 2012-07, Vol.350 (1), p.21-26

2012

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Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas

Nano letters, 2012-04, Vol.12 (4), p.1749-1756

2012

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Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Applied physics letters, 2013-08, Vol.103 (8), p.82110

2013

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Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

IEEE electron device letters, 2011-03, Vol.32 (3), p.270-272

2011

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Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

IEEE electron device letters, 2010-04, Vol.31 (4), p.260-262

2010

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Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

Applied physics letters, 2014-06, Vol.104 (22)

2014

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Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect

Physical review letters, 2013-08, Vol.111 (7), p.077402-077402

2013

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Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC

Carbon (New York), 2014-12, Vol.80, p.75-81

2014

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GaN vertical and lateral polarity heterostructures on GaN substrates

Journal of crystal growth, 2011-10, Vol.332 (1), p.43-47

2011

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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface

Surface science, 2013-11, Vol.617, p.113-117

2013

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Assembly of phosphonic acids on GaN and AlGaN

Journal of physics. D, Applied physics, 2010-01, Vol.43 (1), p.015303-015303 (5)

2010

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Plasma-based chemical modification of epitaxial graphene with oxygen functionalities

Surface & coatings technology, 2014-02, Vol.241, p.8-12

2014

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Approach for dislocation free GaN epitaxy

Journal of crystal growth, 2010-10, Vol.312 (21), p.3143-3146

2010

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Investigation of the Epitaxial Graphene/p-SiC Heterojunction

IEEE electron device letters, 2012-11, Vol.33 (11), p.1610-1612

2012

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Hall effect mobility of epitaxial graphene grown on silicon carbide

Applied physics letters, 2009-09, Vol.95 (12), p.122102-122102-3

2009

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Investigation of three-step epilayer growth approach of GaN films to minimize compensation

Journal of electronic materials, 2005-09, Vol.34 (9), p.1187-1192

2005

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Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate

Physical review. B, 2019-02, Vol.99 (8), p.085440, Article 085440

2019

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Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene

MRS bulletin, 2012-12, Vol.37 (12), p.1149-1157

2012

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Surface depletion effects in semiconducting nanowires

Journal of applied physics, 2008-05, Vol.103 (10), p.104313-104313-6

2008

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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Journal of crystal growth, 2009, Vol.311 (2), p.238-243

2009

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Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

Journal of crystal growth, 2018-09, Vol.498, p.352-356

2018

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Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.565-568

2014

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

Journal of crystal growth, 2006-01, Vol.287 (2), p.610-614

2006

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Silicon Carbide as a Platform for Power Electronics

Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas

Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect

Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC

GaN vertical and lateral polarity heterostructures on GaN substrates

Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface

Assembly of phosphonic acids on GaN and AlGaN

Plasma-based chemical modification of epitaxial graphene with oxygen functionalities

Approach for dislocation free GaN epitaxy

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

Hall effect mobility of epitaxial graphene grown on silicon carbide

Investigation of three-step epilayer growth approach of GaN films to minimize compensation

Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate

Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene

Surface depletion effects in semiconducting nanowires

Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN

MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

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