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Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers

Physical review. B, Condensed matter and materials physics, 2004-06, Vol.69 (23), p.235332.1-235332.39, Article 235332

2004

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Clinical and functional significance of STEAP4‐splice variant in CD14+ monocytes in patients with rheumatoid arthritis

Clinical and experimental immunology, 2018-03, Vol.191 (3), p.338-348

2018

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An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

IEEE photonics technology letters, 2005-08, Vol.17 (8), p.1614-1616

2005

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IEEE_Xplore

Predictors of the response to treatment in acute lupus hemophagocytic syndrome

Lupus, 2015-06, Vol.24 (7), p.659-668

2015

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Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs ∕ GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection

Journal of applied physics, 2005-02, Vol.97 (4), p.043523-043523-8

2005

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Symmetric highly efficient (/spl sim/0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers

IEEE photonics technology letters, 2002-08, Vol.14 (8), p.1139-1141

2002

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IEEE_Xplore

Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb/s and a new scheme of 3R regenerators

Measurement science & technology, 2002-11, Vol.13 (11), p.1683-1691

2002

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Artificial control of optical gain polarization by stacking quantum dot layers

Applied physics letters, 2006-05, Vol.88 (21)

2006

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Pattern-effect-free semiconductor optical amplifier achieved using quantum dots

Electronics letters, 2002-09, Vol.38 (19), p.1139-1140

2002

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Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots

Applied physics letters, 2004-03, Vol.84 (11), p.1820-1822

2004

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Extended wavelength emission to 1.3μm in nitrided InAs∕GaAs self-assembled quantum dots

Journal of applied physics, 2005-01, Vol.97 (2)

2005

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Polarization-Insensitive Quantum Dot Semiconductor Optical Amplifiers Using Strain-Controlled Columnar Quantum Dots

Journal of lightwave technology, 2012-01, Vol.30 (1), p.68-75

2012

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IEEE_Xplore

A case of relapsing neurosarcoidosis with brain nodules and hydrocephalus successfully treated by corticosteroid and methotrexate

Rheumatology (Oxford, England), 2015-07, Vol.54 (7), p.1160-1160

2015

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Photon lifetime dependence of modulation efficiency and K factor in 1.3μm self-assembled InAs∕GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth

Applied physics letters, 2004-11, Vol.85 (18), p.4145-4147

2004

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(111)A CdTe rotation growth on (111) Si with low growth rate by metalorganic chemical vapor deposition

Applied physics letters, 1995-11, Vol.67 (21), p.3138-3140

1995

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Acceptor level related Shockley–Read–Hall centers in p-HgCdTe

Journal of crystal growth, 2000-06, Vol.214, p.275-279

2000

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Dependency of p-n junction depth on ion species implanted in HgCdTe

Journal of electronic materials, 1999-06, Vol.28 (6), p.854-857

1999

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Quantum-Dot Semiconductor Optical Amplifiers With Polarization-Independent Gains in 1.5- \mu m Wavelength Bands

IEEE photonics technology letters, 2008-12, Vol.20 (23), p.1908-1910

2008

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IEEE_Xplore

Strain effects on photoluminescence polarization of InAs/GaAs self-assembled quantum dots

Physica Status Solidi (b), 2003-07, Vol.238 (2), p.229-232

2003

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Low threshold current operation of self-assembled InAs∕GaAs quantum dot lasers by metal organic chemicalvapour deposition

Electronics letters, 2003, Vol.39 (15), p.1130

2003

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Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications

Applied physics letters, 2004-11, Vol.85 (19), p.4331-4333

2004

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Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots

Japanese Journal of Applied Physics, 2002-10, Vol.41 (Part 2, No. 10B), p.L1143-L1145

2002

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Electrical fluctuations in HgCdTe introduced during quenching after annealing

Journal of crystal growth, 1997-04, Vol.174 (1), p.746-750

1997

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Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

Journal of electronic materials, 1996-08, Vol.25 (8), p.1358-1361

1996

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Controlling the size of InAs quantum dots on Si(1(-(x)Ge(x)/Si(001) by metalorganic vapor-phase epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-11, Vol.165 (1-2), p.103-106

2009

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Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers

Clinical and functional significance of STEAP4‐splice variant in CD14+ monocytes in patients with rheumatoid arthritis

An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

Predictors of the response to treatment in acute lupus hemophagocytic syndrome

Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs ∕ GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection

Symmetric highly efficient (/spl sim/0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers

Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb/s and a new scheme of 3R regenerators

Artificial control of optical gain polarization by stacking quantum dot layers

Pattern-effect-free semiconductor optical amplifier achieved using quantum dots

Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots

Extended wavelength emission to 1.3μm in nitrided InAs∕GaAs self-assembled quantum dots

Polarization-Insensitive Quantum Dot Semiconductor Optical Amplifiers Using Strain-Controlled Columnar Quantum Dots

A case of relapsing neurosarcoidosis with brain nodules and hydrocephalus successfully treated by corticosteroid and methotrexate

Photon lifetime dependence of modulation efficiency and K factor in 1.3μm self-assembled InAs∕GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth

(111)A CdTe rotation growth on (111) Si with low growth rate by metalorganic chemical vapor deposition

Acceptor level related Shockley–Read–Hall centers in p-HgCdTe

Dependency of p-n junction depth on ion species implanted in HgCdTe

Quantum-Dot Semiconductor Optical Amplifiers With Polarization-Independent Gains in 1.5- \mu m Wavelength Bands

Strain effects on photoluminescence polarization of InAs/GaAs self-assembled quantum dots

Low threshold current operation of self-assembled InAs∕GaAs quantum dot lasers by metal organic chemicalvapour deposition

Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications

Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots

Electrical fluctuations in HgCdTe introduced during quenching after annealing

Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

Controlling the size of InAs quantum dots on Si(1(-(x)Ge(x)/Si(001) by metalorganic vapor-phase epitaxy

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