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Incorporation and activation of group V elements in MOVPE-grown CdxHg1-xTe

Journal of crystal growth, 1989-10, Vol.97 (3-4), p.833-844

1989

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Amorphous silicon-silicon nitride thin-film transistors

Applied physics letters, 1981-05, Vol.38 (10), p.794-796

1981

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MOVPE growth and characterization of doped CdxHg1-xTe structures

Semiconductor science and technology, 1991-12, Vol.6, p.C26

1991

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Growth and characterisation of CdxHg1-xTe grown by LPE using a novel sliding boat

Semiconductor science and technology, 1987-11, Vol.2 (11), p.710-715

1987

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Computer controlled deposition of cmt heterostructures by Movpe

Journal of crystal growth, 1986-12, Vol.79 (1), p.935-939

1986

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Extrinsic doping at low concentrations for CDxHg1- xTe layers grown by MOVPE

Journal of crystal growth, 1990-04, Vol.101 (1), p.300-304

1990

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Group V acceptor doping of CdxHg1-xTe layers grown by metal-organic vapour phase epitaxy

Materials letters, 1988-06, Vol.6 (10), p.365-368

1988

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Arsenic diffusion effects in CdxHg1-xTe layers grown by metal-organic vapour phase epitaxy

Materials letters, 1989-06, Vol.8 (5), p.190-193

1989

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Arsenic diffusion effects in CdxHg1-xTe layers grown by metal-organic vapour phase epitaxy

Materials letters, 1989-09, Vol.8 (9), p.385-388

1989

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Annealing and light induced changes in the field effect conductance of amorphous silicon

Journal of applied physics, 1982-07, Vol.53 (7), p.5068-5078

1982

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Temperature variations during MOVPE growth of CdxHg1-xTe

Journal of crystal growth, 1987-03, Vol.82 (3), p.495-500

1987

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Substrate orientation effects in CdxHg1−xTe grown by MOVPE

Journal of crystal growth, 1989-07, Vol.96 (3), p.519-532

1989

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The plasma-enhanced deposition of hydrogenated amorphous silicon

Vacuum, 1984-01, Vol.34 (3), p.371-376

1984

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276. The optical rotatory dispersion of hydrocarbons. (+)-3-Methylhexane

Journal of the Chemical Society, 1959, p.1413

1959

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Electrical properties and annealing behaviour of CdxHg1− xTe grown by LPE and MOVPE

Journal of crystal growth, 1986-12, Vol.79 (1), p.508-514

1986

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THE EFFECT OF ANNEALING AND ILLUMINATION ON THE FIELD EFFECT CONDUCTANCE OF AMORPHOUS SILICON

Le Journal de Physique Colloques, 1981-10, Vol.42 (C4), p.C4-C4-382

1981

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Amorphous-silicon TFT array for LCD addressing

Electronics letters, 1982-01, Vol.18 (20), p.858

1982

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Band edge absorption in CdxHg1− xTe grown by metal-organic vapour phase epitaxy

Infrared physics, 1989, Vol.29 (6), p.961-964

1989

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An investigation of the pyrolysis of dimethylcadmium and diethyltelluride by in-situ gas sampling and analysis

Journal of crystal growth, 1984-09, Vol.68 (1), p.128-135

1984

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MOVPE growth and characterization of doped Cd x Hg 1-x Te structures

Semiconductor science and technology, 1991-12, Vol.6 (12C), p.C26-C30

1991

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Substrate orientation effects in Cd(x)Hg(1-x)Te grown by MOVPE

Journal of crystal growth, 1989-07, Vol.96 (3), p.519-532

1989

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Substrate orientation effects in CdxHg1-xTe grownby MOVPE

Journal of crystal growth, 1989, Vol.96 (3), p.519-532

1989

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Growth and characterisation of Cd x Hg 1-x Te grown by LPE using a novel sliding boat

Semiconductor science and technology, 1987-11, Vol.2 (11), p.710-715

1987

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Impurities and metalorganic chemical-vapor deposition growth of mercury cadmium telluride

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1991-05, Vol.9 (3), p.1682-1686

1991

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The isolation of (-)-sec.-butylcarbinol from fusel oil

Journal of applied chemistry (London), 1957-04, Vol.7 (4), p.198-204

1957

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Incorporation and activation of group V elements in MOVPE-grown CdxHg1-xTe

Amorphous silicon-silicon nitride thin-film transistors

MOVPE growth and characterization of doped CdxHg1-xTe structures

Growth and characterisation of CdxHg1-xTe grown by LPE using a novel sliding boat

Computer controlled deposition of cmt heterostructures by Movpe

Extrinsic doping at low concentrations for CDxHg1- xTe layers grown by MOVPE

Group V acceptor doping of CdxHg1-xTe layers grown by metal-organic vapour phase epitaxy

Arsenic diffusion effects in CdxHg1-xTe layers grown by metal-organic vapour phase epitaxy

Arsenic diffusion effects in CdxHg1-xTe layers grown by metal-organic vapour phase epitaxy

Annealing and light induced changes in the field effect conductance of amorphous silicon

Temperature variations during MOVPE growth of CdxHg1-xTe

Substrate orientation effects in CdxHg1−xTe grown by MOVPE

The plasma-enhanced deposition of hydrogenated amorphous silicon

276. The optical rotatory dispersion of hydrocarbons. (+)-3-Methylhexane

Electrical properties and annealing behaviour of CdxHg1− xTe grown by LPE and MOVPE

THE EFFECT OF ANNEALING AND ILLUMINATION ON THE FIELD EFFECT CONDUCTANCE OF AMORPHOUS SILICON

Amorphous-silicon TFT array for LCD addressing

Band edge absorption in CdxHg1− xTe grown by metal-organic vapour phase epitaxy

An investigation of the pyrolysis of dimethylcadmium and diethyltelluride by in-situ gas sampling and analysis

MOVPE growth and characterization of doped Cd x Hg 1-x Te structures

Substrate orientation effects in Cd(x)Hg(1-x)Te grown by MOVPE

Substrate orientation effects in CdxHg1-xTe grownby MOVPE

Growth and characterisation of Cd x Hg 1-x Te grown by LPE using a novel sliding boat

Impurities and metalorganic chemical-vapor deposition growth of mercury cadmium telluride

The isolation of (-)-sec.-butylcarbinol from fusel oil

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