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Admittance measurements in the temperature range (8−77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers

The Journal of physics and chemistry of solids, 2017-03, Vol.102, p.42-48

2017

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Admittance measurements in the temperature range (8−77) K for characterization of MIS structures based on MBE n -Hg 0.78 Cd 0.22 Te with and without graded-gap layers

The Journal of physics and chemistry of solids, 2017-03, Vol.102, p.42-48

2017

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ADMITTANCE OF PENTACENE-BASED MIS-STRUCTURES WITH TWO-LAYER INSULATOR Si[O.sub.2]-[Al.sub.2][O.sub.3]

Russian physics journal, 2021-11, Vol.64 (7), p.1281

2021

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Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates

Infrared physics & technology, 2019-11, Vol.102, p.103035, Article 103035

2019

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Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators

Thin solid films, 2012-11, Vol.522, p.261-266

2012

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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-07, Vol.393, p.125721, Article 125721

2020

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Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

Vacuum, 2018-12, Vol.158, p.136-140

2018

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PECULIARITIES OF MODELING THE FREQUENCY DEPENDENCES OF ADMITTANCE OF MIS STRUCTURE BASED ON ORGANIC P3HT FILM WITH AN INSULATOR [Al.sub.2][O.sub.3] LAYER

Russian physics journal, 2019-03, Vol.61 (11), p.2126

2019

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-06, Vol.392, p.1-5, Article 125760

2020

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Photoelectrical characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy

Thin solid films, 2014-01, Vol.551, p.92-97

2014

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Admittance of MIS Structures Based on MBE Te (x = 0.21-0.23) in a Wide Temperature Range

Journal of communications technology & electronics, 2018-09, Vol.63 (9), p.1112

2018

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Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

Infrared physics & technology, 2017-12, Vol.87, p.129-133

2017

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Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors

Russian physics journal, 2021-09, Vol.64 (5), p.763-769

2021

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Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-[Hg.sub.0.775][Cd.sub.0.225]Te in the strong inversion mode

Russian physics journal, 2016-11, Vol.59 (7), p.920

2016

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Unipolar superlattice structures based on MBE HgCdTe for infrared detection

Applied nanoscience, 2020-12, Vol.10 (12), p.4571-4576

2020

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Peculiarities of determining the dopant concentration in the near-surface layer of a semiconductor by measuring the admittance of mis structures based on p-[Hg.sub.0.78][Cd.sub.0.22]te grown by molecular beam epitaxy

Russian physics journal, 2016-06, Vol.59 (2), p.284

2016

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Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride

Russian physics journal, 2020-10, Vol.63 (6), p.907-916

2020

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Admittance of Barrier Structures Based on Mercury Cadmium Telluride

Russian physics journal, 2020-07, Vol.63 (3), p.432-445

2020

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ELECTROPHYSICAL CHARACTERISTICS OF THE PENTACENE-BASED MIS STRUCTURES WITH A Si[O.sub.2] INSULATOR

Russian physics journal, 2019-05, Vol.62 (1), p.90

2019

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Electron concentration in the near-surface graded-gap layer of MBE n-[Hg.sub.1-x][Cd.sub.x][T.sub.e] determined from the capacitance measurements of mis-structures

Russian physics journal, 2017-05, Vol.60 (1), p.128

2017

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Hysteresis phenomena in MIS structures based on graded-gap MBE HgCdTe with a two-layer plasma-chemical insulator Si[O.sub.2]/[Si.sub.3][N.sub.4]

Russian physics journal, 2015-08, p.540

2015

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Admittance of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates

Infrared physics & technology, 2015-07, Vol.71, p.236-241

2015

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Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy

Russian physics journal, 2019-09, Vol.62 (5), p.818-826

2019

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Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films

Russian physics journal, 2019-10, Vol.62 (6), p.1054-1061

2019

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Admittance in MIS structures based on graded-gap MBE p-[Hg.sub.1-x][Cd.sub.x]Te in the strong inversion mode

Russian physics journal, 2014-12, Vol.57 (8), p.1070

2014

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Admittance measurements in the temperature range (8−77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers

Admittance measurements in the temperature range (8−77) K for characterization of MIS structures based on MBE n -Hg 0.78 Cd 0.22 Te with and without graded-gap layers

ADMITTANCE OF PENTACENE-BASED MIS-STRUCTURES WITH TWO-LAYER INSULATOR Si[O.sub.2]-[Al.sub.2][O.sub.3]

Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates

Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators

Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

PECULIARITIES OF MODELING THE FREQUENCY DEPENDENCES OF ADMITTANCE OF MIS STRUCTURE BASED ON ORGANIC P3HT FILM WITH AN INSULATOR [Al.sub.2][O.sub.3] LAYER

Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Photoelectrical characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy

Admittance of MIS Structures Based on MBE Te (x = 0.21-0.23) in a Wide Temperature Range

Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors

Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-[Hg.sub.0.775][Cd.sub.0.225]Te in the strong inversion mode

Unipolar superlattice structures based on MBE HgCdTe for infrared detection

Peculiarities of determining the dopant concentration in the near-surface layer of a semiconductor by measuring the admittance of mis structures based on p-[Hg.sub.0.78][Cd.sub.0.22]te grown by molecular beam epitaxy

Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride

Admittance of Barrier Structures Based on Mercury Cadmium Telluride

ELECTROPHYSICAL CHARACTERISTICS OF THE PENTACENE-BASED MIS STRUCTURES WITH A Si[O.sub.2] INSULATOR

Electron concentration in the near-surface graded-gap layer of MBE n-[Hg.sub.1-x][Cd.sub.x][T.sub.e] determined from the capacitance measurements of mis-structures

Hysteresis phenomena in MIS structures based on graded-gap MBE HgCdTe with a two-layer plasma-chemical insulator Si[O.sub.2]/[Si.sub.3][N.sub.4]

Admittance of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates

Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy

Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films

Admittance in MIS structures based on graded-gap MBE p-[Hg.sub.1-x][Cd.sub.x]Te in the strong inversion mode

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