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Nesting-like band gap in bismuth sulfide Bi2S3

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-01, Vol.9 (39), p.13733-13738

2021

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Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions

Scientific reports, 2016-05, Vol.6 (1), p.26663-26663, Article 26663

2016

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Electromodulation spectroscopy of direct optical transitions in Ge1−xSnx layers under hydrostatic pressure and built-in strain

Journal of applied physics, 2016-06, Vol.119 (21)

2016

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Contactless electroreflectance spectroscopy with a semitransparent capacitor made of a silver mesh of ultrathin lines

Measurement : journal of the International Measurement Confederation, 2021-02, Vol.169, p.108361, Article 108361

2021

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Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure

Applied physics letters, 2017-11, Vol.111 (19)

2017

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Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP

Journal of physics. D, Applied physics, 2022-01, Vol.55 (1), p.15107

2022

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Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning

Journal of applied physics, 2008-09, Vol.104 (6), p.063105-063105-5

2008

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High-pressure Raman scattering in bulk HfS2: comparison of density functional theory methods in layered MS2 compounds (M = Hf, Mo) under compression

Scientific reports, 2018-08, Vol.8 (1), p.1-10, Article 12757

2018

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Pressure and temperature tuning of an external cavity InGaAsP laser diode

Semiconductor science and technology, 2008-12, Vol.23 (12), p.125012

2008

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Pressure and temperature tuning of InGaP/AlGaInP laser diodes from red to yellow

Physica Status Solidi (b), 2009-03, Vol.246 (3), p.508-511

2009

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Nesting-like band gap in bismuth sulfide Bi 2 S 3

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-10, Vol.9 (39), p.13733-13738

2021

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Valley polarization investigation of GeS under high pressure

Physical review. B, 2020-06, Vol.101 (23), p.1, Article 235205

2020

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Electromodulation spectroscopy of direct optical transitions in Ge{sub 1−x}Sn{sub x} layers under hydrostatic pressure and built-in strain

Journal of applied physics, 2016-06, Vol.119 (21)

2016

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Hidden spin-polarized bands in semiconducting 2H-MoTe2

Materials research letters, 2020-02, Vol.8 (2), p.75-81

2020

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A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

Applied physics letters, 2004-02, Vol.84 (8), p.1236-1238

2004

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Pressure and temperature tuning of laser diodes

Physica Status Solidi (b), 2007-01, Vol.244 (1), p.179-186

2007

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The Effect of Pressure and Temperature on AlGaInP and AlGaAs Laser Diodes

Acta physica Polonica, A, 2003-06, Vol.103 (6), p.585-593

2003

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Tunable laser in 1575 nm-1225 nm range achieved by pressure tuning combined with grating tuning

Physica Status Solidi (b), 2007-01, Vol.244 (1), p.219-223

2007

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Pressure-tuned InGaAsSb/AlGaAsSb diode laser with 700 nm tuning range

Applied physics letters, 2004-11, Vol.85 (19), p.4292-4294

2004

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Anomalous differential resistance change at the oscillation threshold in quantum-well laser diodes

IEEE journal of quantum electronics, 2005-01, Vol.41 (1), p.9-14

2005

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Pressure tuning of external-cavity tapered laser

Physica Status Solidi (b), 2009-03, Vol.246 (3), p.516-521

2009

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Screening of built-in electric fields in group III-nitride laser diodes observed by means of hydrostatic pressure

Physica status solidi. C, 2005-01, Vol.2 (3), p.1019-1022

2005

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Tuning of the high-brightness tapered laser and its applications

Physica Status Solidi (b), 2007-01, Vol.244 (1), p.213-218

2007

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Threshold currents under pressure in InGaAsSb/AlGaAsSb laser diodes

Physica Status Solidi (b), 2007-01, Vol.244 (1), p.187-191

2007

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High-pressure Raman scattering in bulk HfS 2 : comparison of density functional theory methods in layered MS 2 compounds (M = Hf, Mo) under compression

Scientific reports, 2018-08, Vol.8 (1), p.12757

2018

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Nesting-like band gap in bismuth sulfide Bi2S3

Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions

Electromodulation spectroscopy of direct optical transitions in Ge1−xSnx layers under hydrostatic pressure and built-in strain

Contactless electroreflectance spectroscopy with a semitransparent capacitor made of a silver mesh of ultrathin lines

Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure

Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP

Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning

High-pressure Raman scattering in bulk HfS2: comparison of density functional theory methods in layered MS2 compounds (M = Hf, Mo) under compression

Pressure and temperature tuning of an external cavity InGaAsP laser diode

Pressure and temperature tuning of InGaP/AlGaInP laser diodes from red to yellow

Nesting-like band gap in bismuth sulfide Bi 2 S 3

Valley polarization investigation of GeS under high pressure

Electromodulation spectroscopy of direct optical transitions in Ge{sub 1−x}Sn{sub x} layers under hydrostatic pressure and built-in strain

Hidden spin-polarized bands in semiconducting 2H-MoTe2

A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

Pressure and temperature tuning of laser diodes

The Effect of Pressure and Temperature on AlGaInP and AlGaAs Laser Diodes

Tunable laser in 1575 nm-1225 nm range achieved by pressure tuning combined with grating tuning

Pressure-tuned InGaAsSb/AlGaAsSb diode laser with 700 nm tuning range

Anomalous differential resistance change at the oscillation threshold in quantum-well laser diodes

Pressure tuning of external-cavity tapered laser

Screening of built-in electric fields in group III-nitride laser diodes observed by means of hydrostatic pressure

Tuning of the high-brightness tapered laser and its applications

Threshold currents under pressure in InGaAsSb/AlGaAsSb laser diodes

High-pressure Raman scattering in bulk HfS 2 : comparison of density functional theory methods in layered MS 2 compounds (M = Hf, Mo) under compression

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