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Observation of three-dimensional massless Kane fermions in a zinc-blende crystal
Nature physics, 2014-03, Vol.10 (3), p.233-238
2014
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THz laser generation on a hybrid surface plasmon in a HgCdTe-based structure
Quantum electronics (Woodbury, N.Y.), 2021-02, Vol.51 (2), p.158-163
2021
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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air
Surface & coatings technology, 2020-04, Vol.387, p.125527-5, Article 125527
2020
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Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
Infrared physics & technology, 2017-12, Vol.87, p.129-133
2017
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Magnetospectroscopy of double HgTe/CdHgTe QWs with inverted band structure in high magnetic fields up to 30 T
Opto-electronics review, 2019-06, Vol.27 (2), p.213-218
2019
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Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/Cd x Hg 1 – x Te quantum wells, emitting at a wavelength of 18 μm
Quantum electronics (Woodbury, N.Y.), 2019-06, Vol.49 (6), p.556-558
2019
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Transmission Spectra of HgTe-Based Quantum Wells and Films in the Far-Infrared Range
Physics of the solid state, 2018-04, Vol.60 (4), p.778-782
2018
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Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/CdxHg1 - xTe quantum wells, emitting at a wavelength of 18 μm
Quantum electronics (Woodbury, N.Y.), 2019-06, Vol.49 (6), p.556-558
2019
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Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission
Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1557-1561
2017
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Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/Cd{sub x}Hg{sub 1 – x}Te quantum wells, emitting at a wavelength of 18 μm
Quantum electronics (Woodbury, N.Y.), 2019-06, Vol.49 (6)
2019
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Magnetospectroscopy of double HgTe/CdHgTe quantum wells
Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1532-1538
2016
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Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells
Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1651-1656
2016
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Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE
Russian physics journal, 2020-06, Vol.63 (2), p.290-295
2020
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Temperature dependences of the product of the differential resistance by the area in misstructures based on [Cd.sub.x][Hg.sub.1-x]Te grown by molecular-beam epitaxy on alternative Si and GaAs substrates
Russian physics journal, 2017-06, Vol.60 (2), p.360
2017
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Magnetoabsorption in narrow-gap HgCdTe epitaxial layers in the terahertz range
Semiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (12), p.1545-1550
2013
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Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells
Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1438-1441
2013
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HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays
Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3), p.385-391
2011
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High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy
Technical physics, 2013-10, Vol.58 (10), p.1536-1539
2013
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Total conductance of MIS structures based on graded-gap p-[Hg.sub.1-x][Cd.sub.x]Te grown by molecular beam epitaxy
Russian physics journal, 2014-10, Vol.57 (6), p.707
2014
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Special features of admittance in MIS structures based on graded-gap MBE n-[Hg.sub.1-x][Cd.sub.x]Te in a temperature range of 8-300 K
Russian physics journal, 2014-09, Vol.57 (5), p.633
2014
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Differential resistance of space charge region in mis structures based on graded-gap mbe n-[Hg.sub.1-x][Cd.sub.x]Te in a wide temperature range
Russian physics journal, 2014-08, Vol.57 (4), p.536
2014
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Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe
Opto-electronics review, 2010, Vol.18 (3), p.259-262
2010
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An Investigation into the Admittance of MIS-Structures Based on MBE HgCdTe with Quantum Wells
Russian physics journal, 2013-12, Vol.56 (7), p.778-784
2013
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The effect of low-temperature annealing on the electrical properties of the p-type cadmium–mercury–tellurium heterostructures grown by molecular beam epitaxy
Russian physics journal, 2013-08, Vol.56 (3), p.313-318
2013
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The photoelectrical properties of MIS structures based on heteroepitaxial n-[Hg.sub.1-x][Cd.sub.x]Te
Russian physics journal, 2013-01, Vol.55 (8), p.917
2013
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