UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-8

2023

Volltextzugriff (PDF)

Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1608-1611

2022

Volltextzugriff (PDF)

Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6465-6472

2023

Volltextzugriff (PDF)

Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6602-6609

2022

Volltextzugriff (PDF)

Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs-Part I

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.72-79

2021

Volltextzugriff (PDF)

Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5720-5727

2021

Volltextzugriff (PDF)

On the Channel Hot-Electron's Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4869-4876

2021

Volltextzugriff (PDF)

Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs-Part II

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.80-87

2021

Volltextzugriff (PDF)

Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs-Part II

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5728-5735

2021

Volltextzugriff (PDF)

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6934-6939

2022

Volltextzugriff (PDF)

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6035-6042

2022

Volltextzugriff (PDF)

Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6211-6216

2023

Volltextzugriff (PDF)

Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6175-6182

2023

Volltextzugriff (PDF)

Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6183-6189

2023

Volltextzugriff (PDF)

Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors

Journal of applied physics, 2021-07, Vol.130 (1)

2021

Volltextzugriff (PDF)

UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-5

2019

Volltextzugriff (PDF)

Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-4

2023

Volltextzugriff (PDF)

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2544-2550

2019

Volltextzugriff (PDF)

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-5

2023

Volltextzugriff (PDF)

Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic \textit} Behavior in AlGaN/GaN HEMTs-Part II

IEEE transactions on electron devices, 2023-12, p.1-0

2023

Volltextzugriff (PDF)

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic \textit} of AlGaN/GaN HEMTs Under Semi-On State

IEEE transactions on electron devices, 2022, p.1-0

2022

Volltextzugriff (PDF)

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022, p.1-8

2022

Volltextzugriff (PDF)

Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5720-5727

2021

Volltextzugriff (PDF)

Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic Ron Behavior in AlGaN/GaN HEMTs-Part I

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6175-6182

2023

Volltextzugriff (PDF)

Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.341-344

2020

Volltextzugriff (PDF)

1 – 25 von 40

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(23)
Mit Volltextzugriff
(35)

Publikationsform

Sprache

Englisch
(40)

Erscheinungsjahr

n.n

Thema

Science & Technology
(24)
Engineering
(23)
Technology
(23)
Engineering, Electrical & Electronic
(22)
Aluminum Gallium Nitrides
(21)
Gallium Nitrides
(21)
Hemts
(20)
High Electron Mobility Transistors
(19)
Physical Sciences
(18)
Physics
(18)
Physics, Applied
(17)
Electric Fields
(15)
Modfets
(15)
Wide Band Gap Semiconductors
(15)
Stress
(14)
Aluminum Gallium Nitride
(13)
Buffers
(13)
Algan/gan Hemts
(11)
Hot Electrons
(11)
Logic Gates
(11)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

3 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Menü

Weitere Dienste

Einstellungen

Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance

Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG

Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si

Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer

Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs-Part I

Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

On the Channel Hot-Electron's Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs-Part II

Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs-Part II

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes

Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I

Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II

Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors

UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities

Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences

Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic \textit} Behavior in AlGaN/GaN HEMTs-Part II

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic \textit} of AlGaN/GaN HEMTs Under Semi-On State

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic Ron Behavior in AlGaN/GaN HEMTs-Part I

Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure

Suchergebnisse filtern