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Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer

Nature communications, 2015-07, Vol.6 (1), p.7817-7817, Article 7817

2015

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Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition

Chemistry of materials, 2015-01, Vol.27 (1), p.148-156

2015

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Comparative study of two atomic layer etching processes for GaN

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-05, Vol.38 (3)

2020

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Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

Applied physics letters, 2011-07, Vol.99 (2)

2011

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Atomic layer deposition and characterization of vanadium oxide thin films

RSC advances, 2013-01, Vol.3 (4), p.1179-1185

2013

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High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

Nanomaterials (Basel, Switzerland), 2022-12, Vol.12 (23), p.4125

2022

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Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas

Chemistry of materials, 2010-10, Vol.22 (20), p.5700-5706

2010

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Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

Journal of the Electrochemical Society, 2011-01, Vol.158 (8), p.G169

2011

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Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor

Japanese Journal of Applied Physics, 2010-05, Vol.49 (5), p.05FA10-05FA10-5

2010

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High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate Dielectric

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3382-3386

2019

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NF3 and F2 gas fluorination of GaN surface and Pt/GaN interface analyzed by hard X-ray photoelectron spectroscopy

Applied surface science, 2024-06, Vol.659, p.159941, Article 159941

2024

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Boosted growth rate using discrete reactant feeding method and novel precursor of indium oxide by atomic layer deposition

Applied surface science, 2024-05, Vol.654, p.159508, Article 159508

2024

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Extra Low-Temperature SiO2 Deposition Using Aminosilanes

ECS transactions, 2007-07, Vol.3 (15), p.119-128

2007

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Design, Synthesis and ALD Assessment of Organometallic Precursors for Semiconductor Applications

ECS transactions, 2014, Vol.64 (9), p.233-241

Dussarrat, Christian

2014

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Sequential Design of PEALD In-Ga-Zn-O Active Layer for Enhancing TFT Stability

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6347-6353

2023

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High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO 2 Gate Dielectric

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3382-3386

2019

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Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium

Chemistry of materials, 2011-05, Vol.23 (10), p.2650-2656

2011

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Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It

ACS Materials Au, 2023-07, Vol.3 (4), p.274-298

2023

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Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone

ACS applied materials & interfaces, 2018-01, Vol.10 (2), p.2143-2150

2018

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High-Quality SiO 2 /O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

Nanomaterials (Basel, Switzerland), 2022-11, Vol.12 (23)

2022

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High-Quality ISiO/I[sub.2]/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

Nanomaterials (Basel, Switzerland), 2022-11, Vol.12 (23)

2022

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Thermal Atomic Layer Deposition of Yttrium Oxide Films and Their Properties in Anticorrosion and Water Repellent Coating Applications

Coatings (Basel), 2021-05, Vol.11 (5), p.497

2021

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Novel Heteroleptic Precursors for Atomic Layer Deposition of TiO 2

Chemistry of materials, 2012-09, Vol.24 (17), p.3420-3424

2012

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Deposition of highly pure ruthenium thin films with a new metal-organic precursor

Surface & coatings technology, 2007-09, Vol.201 (22), p.9146-9148

2007

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Novel Heteroleptic Precursors for Atomic Layer Deposition of TiO2

Chemistry of materials, 2012-09, Vol.24 (17), p.3420-3424

2012

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Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer

Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition

Comparative study of two atomic layer etching processes for GaN

Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

Atomic layer deposition and characterization of vanadium oxide thin films

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas

Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor

High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate Dielectric

NF3 and F2 gas fluorination of GaN surface and Pt/GaN interface analyzed by hard X-ray photoelectron spectroscopy

Boosted growth rate using discrete reactant feeding method and novel precursor of indium oxide by atomic layer deposition

Extra Low-Temperature SiO2 Deposition Using Aminosilanes

Design, Synthesis and ALD Assessment of Organometallic Precursors for Semiconductor Applications

Sequential Design of PEALD In-Ga-Zn-O Active Layer for Enhancing TFT Stability

High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO 2 Gate Dielectric

Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium

Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It

Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone

High-Quality SiO 2 /O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

High-Quality ISiO/I[sub.2]/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

Thermal Atomic Layer Deposition of Yttrium Oxide Films and Their Properties in Anticorrosion and Water Repellent Coating Applications

Novel Heteroleptic Precursors for Atomic Layer Deposition of TiO 2

Deposition of highly pure ruthenium thin films with a new metal-organic precursor

Novel Heteroleptic Precursors for Atomic Layer Deposition of TiO2

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