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Physics and applications of Si/SiGe/Si resonant interband tunneling diodes

Thin solid films, 2000-12, Vol.380 (1), p.151-153

2000

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Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio

Applied physics letters, 2000-02, Vol.76 (7), p.879-881

2000

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Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes

Thin solid films, 2000-07, Vol.369 (1-2), p.33-38

2000

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Reliability aspects of Hf-based capacitors: Breakdown and trapping effects

Microelectronics and reliability, 2007-04, Vol.47 (4), p.497-500

2007

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Localization and physical analysis of dielectric weaknesses for state-of-the-art deep trench based DRAM products

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1520-1525

2005

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High room temperature peak-to-valley current ratio in Si based Esaki diodes

Electronics letters, 1999-06, Vol.35 (13), p.1111-1112

1999

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Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes

IEEE electron device letters, 2001-05, Vol.22 (5), p.215-217

2001

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IEEE_Xplore

Si-based resonant inter- and intraband tunneling diodes

Journal of crystal growth, 2001-07, Vol.227, p.770-776

2001

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Influence of layer structure on the current-voltage characteristics of Si∕SiGe interband tunneling diodes

Journal of applied physics, 2004-10, Vol.96 (7), p.3848-3851

2004

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Growth and thermal stability of pseudomorphic Ge1−yCy/Ge superlattices on Ge(001)

Applied physics letters, 1999-02, Vol.74 (8), p.1150-1152

1999

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"Doing the lesson" or "doing science": argument in High School genetics

Science education (Salem, Mass.), 2000-11, Vol.84 (6), p.757-792

2000

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Hole mobilities in pseudomorphic Si1-x-yGexCy alloy layers

Thin solid films, 1998-12, Vol.336 (1-2), p.336-339

1998

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La valoración de argumentaciones y explicaciones : promover estrategias de retroalimentación

Enseñanza de las ciencias, 2008-03, Vol.16 (1), p.3-20

Duschl, R. A.

2008

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Influence of gate material and stress voltage on post breakdown leakage current of high k dielectrics

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.632-633

2005

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IEEE_Xplore

Learning Introductory Quantum Physics: Sensori-motor experiences and mental models

International journal of science education, 2005, Vol.27 (13), p.1571-1594

2005

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Is the power-law model applicable beyond the direct tunneling regime?

Microelectronics and reliability, 2005-12, Vol.45 (12), p.1861-1867

2005

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Influence of charge trapping on AC reliability of high-k dielectrics

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.585-586

2004

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IEEE_Xplore

Tunnelling diode technology

Proceedings / International Symposium on Multiple-Valued Logic, 2001, p.49-58

2001

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IEEE_Xplore

Lifetime Prediction for CMOS Devices with Ultra Thin Gate Oxides Based on Progressive Breakdown

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.217-220

2007

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IEEE_Xplore

Retention and attrition of science talent: a longitudinal study of Westinghouse Science Talent Search winners

International journal of science education, 1993-01, Vol.15 (1), p.61-72

1993

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Voltage acceleration of oxide breakdown in the sub-10 nm Fowler-Nordheim and direct tunneling regime

2005 IEEE International Integrated Reliability Workshop, 2005, p.5 pp.

2005

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IEEE_Xplore

Students' Understanding of the Objectives and Procedures of Experimentation in the Science Classroom

The Journal of the learning sciences, 1995-04, Vol.4 (2), p.131-166

1995

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Hole mobilities in pseudomorphic Si sub(1-x-y)Ge sub(x)C sub(y) alloy layers

Thin solid films, 1998-12, Vol.336 (1-2), p.336-339

1998

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Room temperature [formula omitted]–[formula omitted] characteristics of [formula omitted] interband tunneling diodes

Physica. E, Low-dimensional systems & nanostructures, 2000-05, Vol.7 (3-4), p.836-839

2000

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Room temperature I–V characteristics of // interband tunneling diodes

Physica. E, Low-dimensional systems & nanostructures, 2000-05, Vol.7 (3-4), p.836-839

2000

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Physics and applications of Si/SiGe/Si resonant interband tunneling diodes

Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio

Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes

Reliability aspects of Hf-based capacitors: Breakdown and trapping effects

Localization and physical analysis of dielectric weaknesses for state-of-the-art deep trench based DRAM products

High room temperature peak-to-valley current ratio in Si based Esaki diodes

Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes

Si-based resonant inter- and intraband tunneling diodes

Influence of layer structure on the current-voltage characteristics of Si∕SiGe interband tunneling diodes

Growth and thermal stability of pseudomorphic Ge1−yCy/Ge superlattices on Ge(001)

"Doing the lesson" or "doing science": argument in High School genetics

Hole mobilities in pseudomorphic Si1-x-yGexCy alloy layers

La valoración de argumentaciones y explicaciones : promover estrategias de retroalimentación

Influence of gate material and stress voltage on post breakdown leakage current of high k dielectrics

Learning Introductory Quantum Physics: Sensori-motor experiences and mental models

Is the power-law model applicable beyond the direct tunneling regime?

Influence of charge trapping on AC reliability of high-k dielectrics

Tunnelling diode technology

Lifetime Prediction for CMOS Devices with Ultra Thin Gate Oxides Based on Progressive Breakdown

Retention and attrition of science talent: a longitudinal study of Westinghouse Science Talent Search winners

Voltage acceleration of oxide breakdown in the sub-10 nm Fowler-Nordheim and direct tunneling regime

Students' Understanding of the Objectives and Procedures of Experimentation in the Science Classroom

Hole mobilities in pseudomorphic Si sub(1-x-y)Ge sub(x)C sub(y) alloy layers

Room temperature [formula omitted]–[formula omitted] characteristics of [formula omitted] interband tunneling diodes

Room temperature I–V characteristics of // interband tunneling diodes

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