UB Paderborn / Katalog / Suche / in CDI

Deconvolution of very low primary energy SIMS depth profiles

Applied surface science, 2006-07, Vol.252 (19), p.6478-6481

2006

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Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (2), Article 020501

2010

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Deconvolution of SIMS depth profiles: Towards simple and faster techniques

Applied surface science, 2008-12, Vol.255 (5), p.1946-1958

2008

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Quantification of germanium and boron in heterostructures Si/Si1−xGex/Si by SIMS

Thin solid films, 1997-02, Vol.294 (1-2), p.54-58

1997

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SIMS quantification of thick Si1-xGex films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+ beam

Surface and interface analysis, 2013, Vol.45

2013

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Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at

Surface and interface analysis, 2013-01, Vol.45 (1), p.369-372

2013

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The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.

Surface and interface analysis, 2011-01, Vol.43 (1-2), p.36-40

2011

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AFM study of the SIMS beam induced roughness in monocrystalline silicon in presence of initial surface or bulk defects of nanometric size

Applied surface science, 2006-07, Vol.252 (19), p.6448-6451

2006

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Silicon nitride films deposited by Hg-photosensitization chemical vapor deposition

Journal of non-crystalline solids, 1992, Vol.144 (2-3), p.261-268

1992

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Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon

Applied surface science, 2004-06, Vol.231, p.678-683

2004

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Ultra-low energy SIMS analysis of boron deltas in silicon

Journal of crystal growth, 2002-11, Vol.245 (1), p.1-8

2002

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Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments

Applied surface science, 2004-06, Vol.231, p.668-672

2004

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New functionalized macrocyclic and macroacyclic Schiff bases: f-metal ions complexation and separation

Materials chemistry and physics, 1992-03, Vol.31 (1), p.181-198

1992

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Comparison between Xe+ and O2+ primary ions, at low impact energy, on B delta-doping, SiGe–Si superlattice and Al/Ti multilayer structures

Applied surface science, 2003-01, Vol.203-204, p.348-353

2003

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The Superconducting Transition in Boron Doped Silicon Films

Acta physica Polonica, A, 2010-11, Vol.118 (5), p.1026-1027

2010

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Comparison between Xe + and O 2+ primary ions, at low impact energy, on B delta-doping, SiGe–Si superlattice and Al/Ti multilayer structures

Applied surface science, 2003-01, Vol.203, p.348-353

2003

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Mirror Electron Microscopy (MEM): Work function and imaging of an electron beam biased junction of silicon (100)

Surface science, 1984-01, Vol.147 (1), p.191-202

1984

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SIMS depth profile correction for the study of the first step of the diffusion of boron in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-07, Vol.142 (3), p.361-376

1998

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The influence of growth techniques on the structure of epitaxial ErSi1.7 on Si(111)

Applied surface science, 1993-03, Vol.65-66, p.704-711

1993

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Quantification of germanium and boron in heterostructures Si/Si 1− xGe x/Si by SIMS

Thin solid films, 1997, Vol.294 (1), p.54-58

1997

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Depth resolution in SIMS study of boron δ-doping in epitaxial silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1994-03, Vol.85 (1-4), p.379-382

1994

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Low-energy (3–100 eV) electron-bombardment-induced nitridation of thin SiO 2 films: physicochemical and electrical analyses

Thin solid films, 1994, Vol.238 (1), p.31-36

1994

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Study of the thermal stability at the interface

Microelectronic engineering, 1997, Vol.33 (1), p.369-375

1997

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Electron powder ribbon polycrystalline silicon plates used for porous layer fabrication

Thin solid films, 1995-01, Vol.255 (1), p.159-162

1995

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Low-energy (3–100 eV) electron-bombardment-induced nitridation of thin SiO2 films: physicochemical and electrical analyses

Thin solid films, 1994-01, Vol.238 (1), p.31-36

1994

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Deconvolution of very low primary energy SIMS depth profiles

Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Deconvolution of SIMS depth profiles: Towards simple and faster techniques

Quantification of germanium and boron in heterostructures Si/Si1−xGex/Si by SIMS

SIMS quantification of thick Si1-xGex films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+ beam

Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at

The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.

AFM study of the SIMS beam induced roughness in monocrystalline silicon in presence of initial surface or bulk defects of nanometric size

Silicon nitride films deposited by Hg-photosensitization chemical vapor deposition

Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon

Ultra-low energy SIMS analysis of boron deltas in silicon

Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments

New functionalized macrocyclic and macroacyclic Schiff bases: f-metal ions complexation and separation

Comparison between Xe+ and O2+ primary ions, at low impact energy, on B delta-doping, SiGe–Si superlattice and Al/Ti multilayer structures

The Superconducting Transition in Boron Doped Silicon Films

Comparison between Xe + and O 2+ primary ions, at low impact energy, on B delta-doping, SiGe–Si superlattice and Al/Ti multilayer structures

Mirror Electron Microscopy (MEM): Work function and imaging of an electron beam biased junction of silicon (100)

SIMS depth profile correction for the study of the first step of the diffusion of boron in silicon

The influence of growth techniques on the structure of epitaxial ErSi1.7 on Si(111)

Quantification of germanium and boron in heterostructures Si/Si 1− xGe x/Si by SIMS

Depth resolution in SIMS study of boron δ-doping in epitaxial silicon

Low-energy (3–100 eV) electron-bombardment-induced nitridation of thin SiO 2 films: physicochemical and electrical analyses

Study of the thermal stability at the interface

Electron powder ribbon polycrystalline silicon plates used for porous layer fabrication

Low-energy (3–100 eV) electron-bombardment-induced nitridation of thin SiO2 films: physicochemical and electrical analyses

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