UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

Optical materials express, 2015-02, Vol.5 (2), p.380-392

2015

Volltextzugriff (PDF)

Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

Journal of crystal growth, 2011, Vol.314 (1), p.92-96

2011

Volltextzugriff (PDF)

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Applied physics letters, 2013-01, Vol.102 (4)

2013

Volltextzugriff (PDF)

Thermal characterization of gallium nitride p-i-n diodes

Applied physics letters, 2018-02, Vol.112 (7)

2018

Volltextzugriff (PDF)

Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode

Applied physics letters, 2002-05, Vol.80 (20), p.3754-3756

2002

Volltextzugriff (PDF)

Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

Applied physics letters, 2008-07, Vol.93 (2)

2008

Volltextzugriff (PDF)

High performance GaN pin rectifiers grown on free-standing GaN substrates

Electronics letters, 2006, Vol.42 (22), p.1313-1314

2006

Volltextzugriff (PDF)

MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Journal of crystal growth, 2015-03, Vol.414, p.119-122

2015

Volltextzugriff (PDF)

Epitaxial tilting of GaN grown on vicinal surfaces of sapphire

Applied physics letters, 2005-05, Vol.86 (21), p.211916-211916-3

2005

Volltextzugriff (PDF)

GaN avalanche photodiodes

Applied physics letters, 2000-02, Vol.76 (7), p.924-926

2000

Volltextzugriff (PDF)

Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN

Journal of applied physics, 1998-06, Vol.83 (11), p.6148-6160

1998

Volltextzugriff (PDF)

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

Applied physics letters, 2012-01, Vol.100 (5), p.051101-051101-4

2012

Volltextzugriff (PDF)

Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N

Journal of electronic materials, 2004-05, Vol.33 (5), p.418-421

2004

Volltextzugriff (PDF)

Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

Electronics letters, 2016-01, Vol.52 (2), p.157-159

2016

Volltextzugriff (PDF)

High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition

Journal of crystal growth, 2007, Vol.298, p.852-856

2007

Volltextzugriff (PDF)

Bandgap bowing in BGaN thin films

Applied physics letters, 2008-08, Vol.93 (8), p.083118-083118-3

2008

Volltextzugriff (PDF)

Low dark current GaN avalanche photodiodes

IEEE journal of quantum electronics, 2000-12, Vol.36 (12), p.1389-1391

2000

Volltextzugriff (PDF)

Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices

Journal of electronic materials, 2006-04, Vol.35 (4), p.705-710

2006

Volltextzugriff (PDF)

Back illuminated AlGaN solar-blind photodetectors

Applied physics letters, 2000-09, Vol.77 (12), p.1900-1902

2000

Volltextzugriff (PDF)

Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

Journal of crystal growth, 2015-12, Vol.432, p.37-44

2015

Volltextzugriff (PDF)

Hydrogen-related, deeply bound excitons in Mg-doped GaN films

Applied physics letters, 2013-08, Vol.103 (8)

2013

Volltextzugriff (PDF)

Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition

Applied physics letters, 1999-12, Vol.75 (26), p.4159-4161

1999

Volltextzugriff (PDF)

Low-noise photodetectors based on heterojunctions of AlGaN–GaN

Applied physics letters, 2001-05, Vol.78 (21), p.3340-3342

2001

Volltextzugriff (PDF)

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

Journal of applied physics, 2005-06, Vol.97 (11), p.116101-116101-3

2005

Volltextzugriff (PDF)

High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching

Applied physics letters, 2000-10, Vol.77 (18), p.2918-2920

2000

Volltextzugriff (PDF)

1 – 25 von 1.244

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(1.017)
Mit Volltextzugriff
(986)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(1.057)
Französisch
(175)
Japanisch
(168)
Deutsch
(8)
Norwegisch
(2)

Erscheinungsjahr

n.n

Thema

Science & Technology
(694)
Physical Sciences
(309)
Physics
(304)
Life Sciences & Biomedicine
(295)
Humans
(290)
Physics, Applied
(216)
Technology
(201)
Female
(174)
Male
(164)
Biological And Medical Sciences
(138)
Engineering
(125)
Exact Sciences And Technology
(123)
Medical Sciences
(115)
Engineering, Electrical & Electronic
(110)
Materials Science
(99)
Middle Aged
(97)
Adult
(84)
Aged
(77)
Animals
(74)
Materials Science, Multidisciplinary
(71)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Ingenta
(449)
MEDLINE
(353)
NUS Single-Journal Subscriptions
(327)
EZB Electronic Journals Library
(325)
American Institute of Physics
(220)
Journals@Ovid Ovid Full Text
(215)
Elsevier ScienceDirect Journals Complete
(212)
IEEE/IET Electronic Library (IEL)
(194)
Wiley Journals
(134)
SpringerLink Journals - AutoHoldings
(121)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(114)
IngentaConnect Journals
(112)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(85)
Wiley Online Library
(61)
Nexis Uni
(52)
JSTOR
(42)
Oxford Journals
(39)
Nature
(37)
Oxford Journals 2020 Medicine
(32)
American Physical Society
(17)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(5)

Menü

Weitere Dienste

Einstellungen

AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Thermal characterization of gallium nitride p-i-n diodes

Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode

Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

High performance GaN pin rectifiers grown on free-standing GaN substrates

MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Epitaxial tilting of GaN grown on vicinal surfaces of sapphire

GaN avalanche photodiodes

Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N

Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition

Bandgap bowing in BGaN thin films

Low dark current GaN avalanche photodiodes

Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices

Back illuminated AlGaN solar-blind photodetectors

Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

Hydrogen-related, deeply bound excitons in Mg-doped GaN films

Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition

Low-noise photodetectors based on heterojunctions of AlGaN–GaN

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching

Suchergebnisse filtern