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Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.496-500

2001

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Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Physica. E, Low-dimensional systems & nanostructures, 2000-02, Vol.6 (1-4), p.297-300

2000

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Schottky gating high mobility Si/Si 1−x Ge x 2D electron systems

Thin solid films, 2000-07, Vol.369 (1-2), p.316-319

2000

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Universality at a quantum Hall – Hall insulator transition in a Si/Si 0.87Ge 0.13 2D hole system

Physica. E, Low-dimensional systems & nanostructures, 2000, Vol.6 (1), p.297-300

2000

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Si/SiGe n-type inverted modulation doping using ion implantation

Thin solid films, 2000-07, Vol.369 (1-2), p.324-327

2000

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Microwave and transport studies of the magnetically-induced insulating phase of bilayer hole systems

Physica. E, Low-dimensional systems & nanostructures, 2002, Vol.12 (1), p.296-299

2002

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Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well

Journal of applied physics, 1998-03, Vol.83 (6), p.3144-3147

1998

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Surface acoustic wave comparison of single and double layer AlGaAs/GaAs 2D hole systems

Physica. B, Condensed matter, 2002-05, Vol.316, p.219-222

2002

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The acoustoelectric effect in double layer AlGaAs/GaAs 2D hole systems

Physica. E, Low-dimensional systems & nanostructures, 2002, Vol.12 (1), p.462-465

2002

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Inverted modulation-doped n-type Si/Si 0.77Ge 0.23 heterostructures

Microelectronic engineering, 2000, Vol.53 (1), p.205-208

2000

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Surface acoustic wave study of a double layer AlGaAs/GaAs 2D hole system

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.70-73

2001

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Si/Si1-xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS process

Microelectronic engineering, 2000-06, Vol.53 (1-4), p.209-212

2000

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Si/Si 1−xGe x heterostructure field effect transistors fabricated using a low thermal budget CMOS process

Microelectronic engineering, 2000, Vol.53 (1), p.209-212

2000

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Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures

Microelectronic engineering, 2000-06, Vol.53 (1-4), p.205-208

2000

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FQHE states of high mobility n-Si/Si1-xGex heterostructures in pulsed magnetic fields

Solid state communications, 1995-10, Vol.96 (2), p.57-60

1995

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FQHE states of high mobility n-Si/Si 1−xGe x heterostructures in pulsed magnetic fields

Solid state communications, 1995, Vol.96 (2), p.57-60

1995

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Low temperature magnetotransport of 2D electron and hole systems in high-mobility SiSi1 − xGex heterostructures

Surface science, 1996-07, Vol.361-362, p.550-555

1996

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Time-resolved magneto-photoluminescence measurements of the integer QHE, fractional QHE and extreme quantum limit

Surface science, 1994-03, Vol.305 (1), p.42-49

1994

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Low temperature magnetotransport of 2D electron and hole systems in high-mobility Si Si 1 − x Ge x heterostructures

Surface science, 1996, Vol.361, p.550-555

1996

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The use of wide ballistic cavities to investigate local weak localization processes induced by geometric scattering

Semiconductor science and technology, 1996-08, Vol.11 (8), p.1189-1197

1996

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Australian national pulsed magnet laboratory for condensed matter physics research

Physica. B, Condensed matter, 1994-07, Vol.201, p.565-571

1994

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The extreme quantum regime of 2D electron and hole systems

Physica. B, Condensed matter, 1994-07, Vol.201, p.301-314

1994

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Low-temperature transport and photoconductivity response of high mobility Si-SiGe heterostructures in strong magnetic fields

Physica. B, Condensed matter, 1996, Vol.216 (3), p.388-392

1996

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High-field photoluminescence in GaAs single heterojunctions

Physica. B, Condensed matter, 1993-02, Vol.184 (1-4), p.56-65

1993

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High-field photoluminescence in GaAs single heterojunctions: Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition

Physica. B, Condensed matter, 1993, Vol.184 (1), p.56-65

1993

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Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Schottky gating high mobility Si/Si 1−x Ge x 2D electron systems

Universality at a quantum Hall – Hall insulator transition in a Si/Si 0.87Ge 0.13 2D hole system

Si/SiGe n-type inverted modulation doping using ion implantation

Microwave and transport studies of the magnetically-induced insulating phase of bilayer hole systems

Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well

Surface acoustic wave comparison of single and double layer AlGaAs/GaAs 2D hole systems

The acoustoelectric effect in double layer AlGaAs/GaAs 2D hole systems

Inverted modulation-doped n-type Si/Si 0.77Ge 0.23 heterostructures

Surface acoustic wave study of a double layer AlGaAs/GaAs 2D hole system

Si/Si1-xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS process

Si/Si 1−xGe x heterostructure field effect transistors fabricated using a low thermal budget CMOS process

Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures

FQHE states of high mobility n-Si/Si1-xGex heterostructures in pulsed magnetic fields

FQHE states of high mobility n-Si/Si 1−xGe x heterostructures in pulsed magnetic fields

Low temperature magnetotransport of 2D electron and hole systems in high-mobility SiSi1 − xGex heterostructures

Time-resolved magneto-photoluminescence measurements of the integer QHE, fractional QHE and extreme quantum limit

Low temperature magnetotransport of 2D electron and hole systems in high-mobility Si Si 1 − x Ge x heterostructures

The use of wide ballistic cavities to investigate local weak localization processes induced by geometric scattering

Australian national pulsed magnet laboratory for condensed matter physics research

The extreme quantum regime of 2D electron and hole systems

Low-temperature transport and photoconductivity response of high mobility Si-SiGe heterostructures in strong magnetic fields

High-field photoluminescence in GaAs single heterojunctions

High-field photoluminescence in GaAs single heterojunctions: Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition

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