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Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure

Applied physics letters, 2022-11, Vol.121 (20)

2022

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2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2

Journal of semiconductors, 2023-07, Vol.44 (7), p.28-31

2023

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Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model

Journal of applied physics, 2014-04, Vol.115 (16)

2014

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Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs

Solid-state electronics, 2014-10, Vol.100, p.15-19

2014

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Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutron transmutation doping

Progress in natural science, 2014-06, Vol.24 (3), p.226-231

2014

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High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.106-109

2018

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Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Science China. Technological sciences, 2013-04, Vol.56 (4), p.957-962

2013

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AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

Journal of semiconductors, 2016-04, Vol.37 (4), p.69-72

宋旭波吕元杰顾国栋王元刚谭鑫周幸叶敦少博徐鹏尹甲运魏碧华冯志红蔡树军

2016

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Design and realization of a X-band graphene amplifier MMIC

2017 IEEE 12th International Conference on ASIC (ASICON), 2017, p.694-697

2017

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Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

Physica status solidi. A, Applications and materials science, 2012-06, Vol.209 (6), p.1174-1178

2012

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Low ohmic contact AlN/GaN HEMTs grown by MOCVD

Journal of semiconductors, 2013-11, Vol.34 (11), p.114004-1-114004-3

2013

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DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment

Journal of semiconductors, 2014-04, Vol.35 (4), p.44002-1-044002-4

2014

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10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation

IEEE electron device letters, 2023-07, Vol.44 (7), p.1048-1051

2023

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Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

Journal of semiconductors, 2014-11, Vol.35 (11), p.23-26

刘波尹甲运吕元杰敦少博张雄文冯志红蔡树军

2014

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Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

Journal of semiconductors, 2015-03, Vol.36 (3), p.34009

2015

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Dependency of current collapse on the device structure of GaN-based HEMTs

2015 IEEE 11th International Conference on ASIC (ASICON), 2015, p.1-4

2015

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600 V/7 A Large-Size RESURF β-Ga2O3 Schottky Barrier Diode With High-Temperature Storage Test

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1320

2024

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Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1199

2023

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600 V/7 A Large-Size RESURF β-Ga 2 O 3 Schottky Barrier Diode With High-Temperature Storage Test

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1320-1324

2024

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600 V/7 A Large-Size RESURF \beta -Ga } O } Schottky Barrier Diode With High-Temperature Storage Test

IEEE transactions on electron devices, 2023-12, p.1-5

2023

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Superior Performance β-Ga 2 O 3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1199-1205

2023

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W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

Journal of semiconductors, 2015-08, Vol.36 (8), p.171-173

徐鹏宋旭波吕元杰王元刚敦少博尹甲运房玉龙顾国栋冯志红蔡树军

2015

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Superior Performance \beta -Ga \text O } Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft-Walton Voltage Multiplier

IEEE transactions on electron devices, 2023-02, p.1-7

2023

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2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2

IEEE transactions on power electronics, 2022-04, Vol.37 (4), p.3743-3746

2022

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2.41 kV Vertical P-Nio/n-Ga 2 O 3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm 2

IEEE transactions on power electronics, 2022-04, Vol.37 (4), p.3743-3746

2022

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Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure

2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2

Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model

Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs

Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutron transmutation doping

High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

Polycrystalline diamond MESFETs by Au-mask technology for RF applications

AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

Design and realization of a X-band graphene amplifier MMIC

Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

Low ohmic contact AlN/GaN HEMTs grown by MOCVD

DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment

10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation

Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

Dependency of current collapse on the device structure of GaN-based HEMTs

600 V/7 A Large-Size RESURF β-Ga2O3 Schottky Barrier Diode With High-Temperature Storage Test

Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

600 V/7 A Large-Size RESURF β-Ga 2 O 3 Schottky Barrier Diode With High-Temperature Storage Test

600 V/7 A Large-Size RESURF \beta -Ga } O } Schottky Barrier Diode With High-Temperature Storage Test

Superior Performance β-Ga 2 O 3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

Superior Performance \beta -Ga \text O } Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft-Walton Voltage Multiplier

2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2

2.41 kV Vertical P-Nio/n-Ga 2 O 3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm 2

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