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Investigation of N(4S) kinetics during the transients of a strongly emissive pulsed ECR plasma using ns-TALIF

Plasma sources science & technology, 2021-09, Vol.30 (9), p.95001

2021

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Plasma diagnostics of an Ar/NH3 direct-current reactive magnetron sputtering discharge for SiNx deposition

Thin solid films, 2012-08, Vol.520 (20), p.6386-6392

2012

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Comparison of three optical diagnostic techniques for the measurement of boron atom density in a H2/B2H6 microwave plasma

Plasma sources science & technology, 2017-11, Vol.26 (11)

2017

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Comparison of three optical diagnostic techniques for the measurement of boron atom density in a H 2 /B 2 H 6 microwave plasma

Plasma sources science & technology, 2017-11, Vol.26 (11), p.115011

2017

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Neutral species in inductively coupled SF6/SiCl4 plasmas

Journal of physics. D, Applied physics, 2009-06, Vol.42 (11), p.115206-115206 (9)

2009

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Cryogenic etching of n-type silicon with p + doped walls with the TGZM process through the Al/Si eutectic alloy

Microelectronic engineering, 2009-11, Vol.86 (11), p.2262-2269

2009

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SO2 passivating chemistry for silicon cryogenic deep etching

Plasma sources science & technology, 2008-11, Vol.17 (4), p.045008

2008

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Effect of the addition of SF6 and N2 in inductively coupled SiCl4 plasma for GaN etching

Semiconductor science and technology, 2009-07, Vol.24 (7), p.075022-075022 (8)

2009

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Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching

Journal of micromechanics and microengineering, 2011-06, Vol.21 (6), p.065015

2011

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Influence of ambient air on the flowing afterglow of an atmospheric pressure Ar/O2 radiofrequency plasma

Journal of applied physics, 2013-03, Vol.113 (9)

2013

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In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process

Applied physics letters, 2009-02, Vol.94 (7)

2009

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In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

Applied physics letters, 2009-02, Vol.94 (7)

2009

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Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution

Solid-state electronics, 2009-07, Vol.53 (7), p.735-740

2009

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Influence of ambient air on the flowing afterglow of an atmospheric pressure Ar/O2 radiofrequency plasma

Journal of applied physics, 2013-03, Vol.113

2013

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Electrical study of ferromagnet-oxide-semiconductor diode for a magnetic memory device integrated on silicon

Applied physics letters, 2007-05, Vol.90 (19), p.192508-192508-3

2007

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Alternating SiCl 4 /O 2 passivation steps with SF 6 etch steps for silicon deep etching

Journal of micromechanics and microengineering, 2011-06, Vol.21 (6), p.65015

2011

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Neutral species in inductively coupled SF 6 /SiCl 4 plasmas

Journal of physics. D, Applied physics, 2009-06, Vol.42 (11), p.115206

2009

Volltextzugriff (PDF)

In situ x-ray photoelectron spectroscopy analysis of SiO x F y passivation layer obtained in a SF 6 / O 2 cryoetching process

Applied physics letters, 2009-02, Vol.94 (7), p.071501-071501-3

2009

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Effect of the addition of SF 6 and N 2 in inductively coupled SiCl 4 plasma for GaN etching

Semiconductor science and technology, 2009-07, Vol.24 (7), p.75022

2009

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In situ x-ray photoelectron spectroscopy analysis of SiO{sub x}F{sub y} passivation layer obtained in a SF{sub 6}/O{sub 2} cryoetching process

Applied physics letters, 2009-02, Vol.94 (7)

2009

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Magnetic and electrical characterization of "ferromagnet/insulator/silicon" diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2006, Vol.123, n° 2-3, p.168-171

2006

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Folded fully depleted Bulk+ technology as a highly W-scaled planar solution

ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008, p.210-213

2008

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Functionalized superhydrophobic coatings with micro-/nanostructured ZnO particles in a sol–gel matrix

Journal of materials science, 2017-11, Vol.52 (21), p.12677-12688

2017

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Comparative analysis of the anticorrosive properties of trivalent chromium conversion coatings formed on 2024-T3 and 2024-T351 aluminium alloys

Corrosion science, 2020-05, Vol.167, p.108508, Article 108508

2020

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Spin-orbit coupling effect by minority interface resonance states in single-crystal magnetic tunnel junctions

Physical review. B, Condensed matter and materials physics, 2012-11, Vol.86 (18), Article 184420

2012

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Investigation of N(4S) kinetics during the transients of a strongly emissive pulsed ECR plasma using ns-TALIF

Plasma diagnostics of an Ar/NH3 direct-current reactive magnetron sputtering discharge for SiNx deposition

Comparison of three optical diagnostic techniques for the measurement of boron atom density in a H2/B2H6 microwave plasma

Comparison of three optical diagnostic techniques for the measurement of boron atom density in a H 2 /B 2 H 6 microwave plasma

Neutral species in inductively coupled SF6/SiCl4 plasmas

Cryogenic etching of n-type silicon with p + doped walls with the TGZM process through the Al/Si eutectic alloy

SO2 passivating chemistry for silicon cryogenic deep etching

Effect of the addition of SF6 and N2 in inductively coupled SiCl4 plasma for GaN etching

Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching

Influence of ambient air on the flowing afterglow of an atmospheric pressure Ar/O2 radiofrequency plasma

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution

Influence of ambient air on the flowing afterglow of an atmospheric pressure Ar/O2 radiofrequency plasma

Electrical study of ferromagnet-oxide-semiconductor diode for a magnetic memory device integrated on silicon

Alternating SiCl 4 /O 2 passivation steps with SF 6 etch steps for silicon deep etching

Neutral species in inductively coupled SF 6 /SiCl 4 plasmas

In situ x-ray photoelectron spectroscopy analysis of SiO x F y passivation layer obtained in a SF 6 / O 2 cryoetching process

Effect of the addition of SF 6 and N 2 in inductively coupled SiCl 4 plasma for GaN etching

In situ x-ray photoelectron spectroscopy analysis of SiO{sub x}F{sub y} passivation layer obtained in a SF{sub 6}/O{sub 2} cryoetching process

Magnetic and electrical characterization of "ferromagnet/insulator/silicon" diodes

Folded fully depleted Bulk+ technology as a highly W-scaled planar solution

Functionalized superhydrophobic coatings with micro-/nanostructured ZnO particles in a sol–gel matrix

Comparative analysis of the anticorrosive properties of trivalent chromium conversion coatings formed on 2024-T3 and 2024-T351 aluminium alloys

Spin-orbit coupling effect by minority interface resonance states in single-crystal magnetic tunnel junctions

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