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Low-Temperature Plasma-Assisted Growth of Core–Shell GeSn Nanowires with 30% Sn

Journal of physical chemistry. C, 2020-01, Vol.124 (1), p.1220-1226

2020

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Atomic-Scale Characterization of N‑Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography

Journal of physical chemistry. C, 2019-03, Vol.123 (12), p.7381-7389

2019

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Rubidium distribution at atomic scale in high efficient Cu(In,Ga)Se2 thin-film solar cells

Applied physics letters, 2018-03, Vol.112 (10)

2018

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Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis

Applied physics letters, 2013-01, Vol.102 (1), p.013116_1-4

2013

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Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Nano letters, 2014-04, Vol.14 (4), p.1769-1775

2014

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Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting

Applied surface science, 2023-03, Vol.612, p.155817, Article 155817

2023

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Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors

Journal of applied physics, 2009-08, Vol.106 (4), p.044908-044908-6

2009

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A Meshless Algorithm to Model Field Evaporation in Atom Probe Tomography

Microscopy and microanalysis, 2015-12, Vol.21 (6), p.1649-1656

2015

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Influence of Na on grain boundary and properties of Cu(In,Ga)Se2 solar cells

Progress in photovoltaics, 2017-05, Vol.25 (5), p.367-375

2017

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Hydrogen Plasma-Assisted Growth of Gold Nanowires

Crystal growth & design, 2020-06, Vol.20 (6), p.4185-4192

2020

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New Atom Probe Tomography Reconstruction Algorithm for Multilayered Samples: Beyond the Hemispherical Constraint

Microscopy and microanalysis, 2017-04, Vol.23 (2), p.247-254

2017

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Quantitative analysis of Si/SiGeC superlattices using atom probe tomography

Ultramicroscopy, 2015-12, Vol.159, p.223-231

2015

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Evidence of Mg Segregation to Threading Dislocation in Normally-Off GaN-HEMT

IEEE transactions on nanotechnology, 2019-01, Vol.18, p.995-998

2019

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Ultrahigh Incorporation of Tin in SiSn Nanowires Grown via In-Plane Solid-Liquid-Solid Mechanism

Applied surface science, 2023-05, Vol.618, p.156637, Article 156637

2023

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Influence of Na on grain boundary and properties of Cu(In,Ga)Se 2 solar cells

Progress in photovoltaics, 2017-05, Vol.25 (5), p.367-375

2017

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Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography

Microscopy and microanalysis, 2022-08, Vol.28 (4), p.994-997

2022

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Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO2 nanoparticles

Nanotechnology, 2021-08, Vol.32 (34)

2021

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Investigation of Sn-containing precursors for in-plane GeSn nanowire growth

Journal of alloys and compounds, 2022-04, Vol.899, p.163273, Article 163273

2022

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Atom probe tomography in nanoelectronics

European physical journal. Applied physics, 2014-10, Vol.68 (1), p.10101

2014

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Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting

Materials science in semiconductor processing, 2023-09, Vol.164, p.107641, Article 107641

2023

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Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography

Journal of applied physics, 2016-05, Vol.119 (18)

2016

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Controlling solid-liquid-solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO2nanoparticles

Nanotechnology, 2021-08, Vol.32 (34)

2021

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Uphill phosphorus diffusion in carbon co-implanted silicon

Journal of applied physics, 2022-03, Vol.131 (11)

2022

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Influence of boron clustering on the emitter quality of implanted silicon solar cells: an atom probe tomography study

Progress in photovoltaics, 2015-12, Vol.23 (12), p.1724-1733

2015

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Low-Temperature Plasma-Assisted Growth of Core–Shell GeSn Nanowires with 30% Sn

Atomic-Scale Characterization of N‑Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography

Heavy Alkali Treatment of Cu(In,Ga)Se 2 Solar Cells: Surface versus Bulk Effects

Rubidium distribution at atomic scale in high efficient Cu(In,Ga)Se2 thin-film solar cells

Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting

Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors

A Meshless Algorithm to Model Field Evaporation in Atom Probe Tomography

Influence of Na on grain boundary and properties of Cu(In,Ga)Se2 solar cells

Hydrogen Plasma-Assisted Growth of Gold Nanowires

New Atom Probe Tomography Reconstruction Algorithm for Multilayered Samples: Beyond the Hemispherical Constraint

Quantitative analysis of Si/SiGeC superlattices using atom probe tomography

Evidence of Mg Segregation to Threading Dislocation in Normally-Off GaN-HEMT

Ultrahigh Incorporation of Tin in SiSn Nanowires Grown via In-Plane Solid-Liquid-Solid Mechanism

Influence of Na on grain boundary and properties of Cu(In,Ga)Se 2 solar cells

Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography

Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO2 nanoparticles

Investigation of Sn-containing precursors for in-plane GeSn nanowire growth

Atom probe tomography in nanoelectronics

Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting

Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography

Controlling solid-liquid-solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO2nanoparticles

Uphill phosphorus diffusion in carbon co-implanted silicon

Influence of boron clustering on the emitter quality of implanted silicon solar cells: an atom probe tomography study

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