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40 Gbit/s optical communications: InP DHBT technology, circuits and system experiments
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), 1999, p.185-188
1999
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Beneficial Contribution of Compositionally In(x)Ga(1-x)As Graded Base on InP Double Heterojunction Bipolar Transistors (DHBT's) for Very High Speed Transmission Circuits
28th European Solid-State Device Research Conference, 1998, p.404-407
1998
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CBE growth of carbon doped InGaAs/InP HBTs for 25 Gbit/s circuits
Journal of crystal growth, 1998-06, Vol.188 (1), p.349-354
1998
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CBE growth of carbon doped InGaAs/InP HBTs for 25Gbit/s circuits
Journal of crystal growth, 1998-06, Vol.188 (1-4), p.349-354
1998
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Design and fabrication process of GaAsGaAlAs ECL inverters
Physica B + C, 1985-01, Vol.129 (1), p.361-365
1985
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Double heterojunction GaAs-GaAlAs bipolar transistors grown by MOCVD for emitter coupled logic circuits
1983 International Electron Devices Meeting, 1983, p.689-691
1983
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A double InGaAs/InP HBT technology for lightwave communication circuits design
Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 1996, p.701-703
1996
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Fully-planar AlGaAs/GaAs HBT's achieved by selective CBE regrowth
IEEE electron device letters, 1994-11, Vol.15 (11), p.480-481
1994
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Fully planar AlGaAs/GaAs heterojunction bipolar transistors using chemical beam epitaxy selective growth
Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.261-263
1994
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High Frequency InGaP/GaAs Planar Heterojunction Bipolar Transistors
ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference, 1995, p.583-586
1995
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A InP DHBT technology for high bit-rate optical communications circuits
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997, 1997, p.219-222
1997
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InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric model
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362), 1999, p.483-486
1999
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InP/InGaAs double-HBT technology for high bit-rate communication circuits
Electronics letters, 1997, Vol.33 (2), p.149
1997
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Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs
Journal of crystal growth, 2000-02, Vol.209 (2), p.476-480
2000
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Low-power operation of InP-based DHBT's for high bit rate circuit applications: reduction of saturation voltage (V/sub sat/)
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.651-654
1998
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p-Type AuMn ohmic contact on GaAs: integration in a HBT processing technology
ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.133-136
1990
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Passivation of InP-based HBTs for high bit rate circuit applications
Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.637-640
1997
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Reproducible low-resistivity AuMn ohmic contact for p-type GaAs
Electronics letters, 1985-07, Vol.21 (14), p.614-615
1985
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Self-Aligned AlGaAs/GaAs HBT Circuits Achieved by CBE Selective Base Contact Regrowth
ESSDERC '94: 24th European Solid State Device Research Conference, 1994, p.451-454
1994
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Self-aligned AlGaAs/GaAs HBT's with tungsten N and P type ohmic contacts
ESSDERC '91: 21st European Solid State Device Research Conference, 1991, Vol.15 (1), p.161-164
1991
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