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An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements

Review of scientific instruments, 2013-12, Vol.84 (12), p.123705-123705

2013

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First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

IEEE electron device letters, 2012-08, Vol.33 (8), p.1168-1170

2012

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High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

IEEE electron device letters, 2011-07, Vol.32 (7), p.874-876

2011

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Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

IEEE electron device letters, 2013-04, Vol.34 (4), p.490-492

2013

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Punch-through in short-channel AlGaN/GaN HFETs

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.395-398

2006

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Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

IEEE electron device letters, 2012-09, Vol.33 (9), p.1258-1260

2012

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A fully distributed non linear waveguide using (Pb,Sr)TiO3 thin film: Second and third harmonics generation

Journal of applied physics, 2013-11, Vol.114 (19)

2013

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Radiation Pattern Measurements of an Integrated Transverse Electromagnetic Horn Antenna Using a Terahertz Photomixing Setup

IEEE microwave and wireless components letters, 2011-01, Vol.21 (1), p.49-51

2011

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Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

IEEE electron device letters, 2006-01, Vol.27 (1), p.7-9

2006

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Large signal microwave performances of high-k metal gate 28 nm CMOS technology

Electronics letters, 2012-12, Vol.48 (25), p.1627-1629

2012

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Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Electronics letters, 2007, Vol.43 (5), p.309-311

2007

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AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

IEEE electron device letters, 2004-07, Vol.25 (7), p.453-455

2004

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Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors

IEEE transactions on microwave theory and techniques, 2008-07, Vol.56 (7), p.1505-1510

2008

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Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

Applied physics express, 2013-04, Vol.6 (4), p.44001

2013

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A high-power W-band pseudomorphic InGaAs channel PHEMT

IEEE electron device letters, 2005-08, Vol.26 (8), p.533-534

2005

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First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Microwave and optical technology letters, 2005-08, Vol.46 (4), p.311-315

2005

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Detecting response of microelectromechanical resonators by microwave reflectometry

Applied physics letters, 2013-07, Vol.103 (5), p.053124-1-5

2013

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LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices

Journal of crystal growth, 2004-12, Vol.272 (1), p.305-311

2004

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Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

Solid-state electronics, 2005-10, Vol.49 (10), p.1589-1594

2005

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High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band

IEEE electron device letters, 2012-02, Vol.33 (2), p.182-184

2012

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Large signal microwave performances of high-k metal gate 28 nm CMOS technology

Electronics letters, 2012-12, Vol.48 (25), p.1-1

2012

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High-Performance Low-Leakage-Current AIN/GaN HEMTs Grown on Silicon Substrate

IEEE electron device letters, 2011, Vol.32 (7), p.874-876

2011

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Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas

Applied physics express, 2012-06, Vol.5 (6), p.67201

2012

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CMOS Integration Using Low Thermal Budget Dopant-Segregated Metallic S/D Junctions on Thin-Body SOI

ECS transactions, 2011, Vol.41 (7), p.275-282

2011

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THz near-field nanoscopy of graphene layers

2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015, p.1-2

2015

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An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

Punch-through in short-channel AlGaN/GaN HFETs

Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

A fully distributed non linear waveguide using (Pb,Sr)TiO3 thin film: Second and third harmonics generation

Radiation Pattern Measurements of an Integrated Transverse Electromagnetic Horn Antenna Using a Terahertz Photomixing Setup

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors

Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

A high-power W-band pseudomorphic InGaAs channel PHEMT

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Detecting response of microelectromechanical resonators by microwave reflectometry

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices

Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

High-Performance Low-Leakage-Current AIN/GaN HEMTs Grown on Silicon Substrate

Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas

CMOS Integration Using Low Thermal Budget Dopant-Segregated Metallic S/D Junctions on Thin-Body SOI

THz near-field nanoscopy of graphene layers

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