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High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors

Applied physics letters, 2014-08, Vol.105 (8)

2014

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Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

Annual review of materials research, 2015-07, Vol.45 (1), p.1-27

2015

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Silicene field-effect transistors operating at room temperature

Nature nanotechnology, 2015-03, Vol.10 (3), p.227-231

2015

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Integrated Circuits Based on Bilayer MoS2 Transistors

Nano letters, 2012-09, Vol.12 (9), p.4674-4680

2012

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Near-unity photoluminescence quantum yield in MoS2

Science (American Association for the Advancement of Science), 2015-11, Vol.350 (6264), p.1065-1068

2015

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Strain-engineered growth of two-dimensional materials

Nature communications, 2017-09, Vol.8 (1), p.608-8, Article 608

2017

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Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers

Advanced materials (Weinheim), 2016-06, Vol.28 (21), p.4053-4058

2016

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Optoelectronic devices based on two-dimensional transition metal dichalcogenides

Nano research, 2016-06, Vol.9 (6), p.1543-1560

2016

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Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

Nano letters, 2014-06, Vol.14 (6), p.3055-3063

2014

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Reconfigurable Stochastic neurons based on tin oxide/MoS2 hetero-memristors for simulated annealing and the Boltzmann machine

Nature communications, 2021-09, Vol.12 (1), p.5710-5710, Article 5710

2021

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Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Dominant ZA phonons and thermal carriers in HfS2

Journal of applied physics, 2019-10, Vol.126 (16)

2019

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High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition

ACS nano, 2016-07, Vol.10 (7), p.6535-6541

2016

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Temperature-dependent phonon shifts in monolayer MoS2

Applied physics letters, 2013-08, Vol.103 (9)

2013

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Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Applied physics letters, 2013-05, Vol.102 (19)

2013

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A Dynamically Reconfigurable Ambipolar Black Phosphorus Memory Device

ACS nano, 2016-11, Vol.10 (11), p.10428-10435

2016

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Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2

Nano letters, 2015-12, Vol.15 (12), p.8377-8384

2015

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Asymmetric Growth of Bilayer Graphene on Copper Enclosures Using Low-Pressure Chemical Vapor Deposition

ACS nano, 2014-06, Vol.8 (6), p.6491-6499

2014

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Graphene-Based Thermopile for Thermal Imaging Applications

Nano letters, 2015-11, Vol.15 (11), p.7211-7216

2015

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Rapid Identification of Stacking Orientation in Isotopically Labeled Chemical-Vapor Grown Bilayer Graphene by Raman Spectroscopy

Nano letters, 2013-04, Vol.13 (4), p.1541-1548

2013

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Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Theoretical study on strain-induced variations in electronic properties of monolayer MoS2

Journal of materials science, 2014-10, Vol.49 (19), p.6762-6771

2014

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Erratum: “High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors” [Appl. Phys. Lett. 105, 083511 (2014)]

Applied physics letters, 2016-02, Vol.108 (6)

2016

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ODE integration schemes for plane-wave real-time time-dependent density functional theory

The Journal of chemical physics, 2019-01, Vol.150 (1), p.014101-014101

2019

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Direct Synthesis of Lithium-Intercalated Graphene for Electrochemical Energy Storage Application

ACS nano, 2011-06, Vol.5 (6), p.4345-4349

2011

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High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors

Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

Silicene field-effect transistors operating at room temperature

Integrated Circuits Based on Bilayer MoS2 Transistors

Near-unity photoluminescence quantum yield in MoS2

Strain-engineered growth of two-dimensional materials

Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers

Optoelectronic devices based on two-dimensional transition metal dichalcogenides

Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

Reconfigurable Stochastic neurons based on tin oxide/MoS2 hetero-memristors for simulated annealing and the Boltzmann machine

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors

Dominant ZA phonons and thermal carriers in HfS2

High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition

Temperature-dependent phonon shifts in monolayer MoS2

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

A Dynamically Reconfigurable Ambipolar Black Phosphorus Memory Device

Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2

Asymmetric Growth of Bilayer Graphene on Copper Enclosures Using Low-Pressure Chemical Vapor Deposition

Graphene-Based Thermopile for Thermal Imaging Applications

Rapid Identification of Stacking Orientation in Isotopically Labeled Chemical-Vapor Grown Bilayer Graphene by Raman Spectroscopy

Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain

Theoretical study on strain-induced variations in electronic properties of monolayer MoS2

Erratum: “High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors” [Appl. Phys. Lett. 105, 083511 (2014)]

ODE integration schemes for plane-wave real-time time-dependent density functional theory

Direct Synthesis of Lithium-Intercalated Graphene for Electrochemical Energy Storage Application

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