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Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity

Applied physics letters, 2023-03, Vol.122 (11)

2023

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Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM

Applied physics letters, 2022-08, Vol.121 (7)

2022

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Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM

Applied physics letters, 2022-05, Vol.120 (20)

2022

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Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH3NH3PbBr3 Crystals

Energies (Basel), 2023-06, Vol.16 (12), p.4547

2023

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In-depth understanding of physical mechanism of the gradual switching in AlOxNy-based RRAM as memory and synapse device

Applied physics letters, 2022-06, Vol.120 (26)

2022

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The influence of device structure on resistance switching in PbS QDs film inserted RRAM

Applied physics letters, 2022-07, Vol.121 (3)

2022

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Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM

Applied physics letters, 2023-07, Vol.123 (3)

2023

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Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM

Applied physics letters, 2021-01, Vol.118 (1)

2021

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Effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing

Applied physics letters, 2021-05, Vol.118 (18)

2021

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Forest top canopy bacterial communities are influenced by elevation and host tree traits

Environmental microbiome, 2024-04, Vol.19 (1), p.21-21, Article 21

2024

Volltextzugriff (PDF)

Effect of Inevitable Heat Leap on the Conversion Efficiency of Thermoelectric Generators

Physical review letters, 2023-11, Vol.131 (20), p.207001-207001, Article 207001

2023

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Nonlinear thermo-acoustic response and fatigue prediction of three-dimensional braided composite panels in supersonic flow

Composite structures, 2023-07, Vol.315, p.117009, Article 117009

2023

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Snap-through response of three-dimensional braided composite panels in thermal-acoustic-aero coupled field

European journal of mechanics, A, Solids, 2023-11, Vol.102, p.105099, Article 105099

2023

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Subharmonically Pumped Millimeter-Wave Upconverters Based on Heterostructure Barrier Varactors

IEEE transactions on microwave theory and techniques, 2006-10, Vol.54 (10), p.3648-3653

2006

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Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH[sub.3]NH[sub.3]PbBr[sub.3] Crystals

Energies (Basel), 2023-06, Vol.16 (12)

2023

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SiN x ‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration

Physica status solidi. A, Applications and materials science, 2024-05, Vol.221 (10)

2024

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SiNx‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration

Physica status solidi. A, Applications and materials science, 2024-05, Vol.221 (10)

2024

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Temperate tree microbiomes: divergent soil and phyllosphere microbial communities share few but dominant taxa

Plant and soil, 2024-03, Vol.496 (1-2), p.319-340

2024

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Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN x ‐Based Resistive Random Access Memory

Physica status solidi. A, Applications and materials science, 2023-11, Vol.220 (21)

2023

Volltextzugriff (PDF)

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiNx‐Based Resistive Random Access Memory

Physica status solidi. A, Applications and materials science, 2023-11, Vol.220 (21), p.n/a

2023

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High-Resistance State Reduction During Initial Cycles of AlOxNy-Based RRAM

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5606-5611

2021

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Millimeter-Sized Two-Dimensional Molecular Crystalline Semiconductors with Precisely Defined Molecular Layers via Interfacial-Interaction-Modulated Self-Assembly

The journal of physical chemistry letters, 2018-12, Vol.9 (23), p.6755-6760

2018

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Understanding the Origin of Unreliable Low-Resistance State During Initialization Process

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6369-6375

2022

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Molecular Layer-Defined Transition of Carrier Distribution and Correlation with Transport in Organic Crystalline Semiconductors

ACS applied materials & interfaces, 2020-06, Vol.12 (23), p.26267-26275

2020

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Failure analysis and engineering mechanics modeling methods of a stitched ceramic sandwich structure

Engineering failure analysis, 2023-07, Vol.149, p.107275, Article 107275

2023

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Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity

Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM

Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM

Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH3NH3PbBr3 Crystals

In-depth understanding of physical mechanism of the gradual switching in AlOxNy-based RRAM as memory and synapse device

The influence of device structure on resistance switching in PbS QDs film inserted RRAM

Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM

Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM

Effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing

Forest top canopy bacterial communities are influenced by elevation and host tree traits

Effect of Inevitable Heat Leap on the Conversion Efficiency of Thermoelectric Generators

Nonlinear thermo-acoustic response and fatigue prediction of three-dimensional braided composite panels in supersonic flow

Snap-through response of three-dimensional braided composite panels in thermal-acoustic-aero coupled field

Subharmonically Pumped Millimeter-Wave Upconverters Based on Heterostructure Barrier Varactors

Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH[sub.3]NH[sub.3]PbBr[sub.3] Crystals

SiN x ‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration

SiNx‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration

Temperate tree microbiomes: divergent soil and phyllosphere microbial communities share few but dominant taxa

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN x ‐Based Resistive Random Access Memory

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiNx‐Based Resistive Random Access Memory

High-Resistance State Reduction During Initial Cycles of AlOxNy-Based RRAM

Millimeter-Sized Two-Dimensional Molecular Crystalline Semiconductors with Precisely Defined Molecular Layers via Interfacial-Interaction-Modulated Self-Assembly

Understanding the Origin of Unreliable Low-Resistance State During Initialization Process

Molecular Layer-Defined Transition of Carrier Distribution and Correlation with Transport in Organic Crystalline Semiconductors

Failure analysis and engineering mechanics modeling methods of a stitched ceramic sandwich structure

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