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High-brightness spectral beam combining of diode laser array stack in an external cavity

Optics express, 2015-08, Vol.23 (17), p.21819-21824

2015

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Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting

Japanese Journal of Applied Physics, 2019-08, Vol.58 (8), p.81001

2019

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Spectral Bandwidth Narrowing of High Brightness Spectral Beam Combining Diode Laser

IEEE photonics journal, 2017-04, Vol.9 (2), p.1-6

2017

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Poly(methyl methacrylate)/silica/titania ternary nanocomposites with greatly improved thermal and ultraviolet-shielding properties

Polymer degradation and stability, 2006-07, Vol.91 (7), p.1455-1461

2006

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Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers

Guangxué xuébào, 2019-06, Vol.39 (6), p.614002

2019

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Space charge distribution and crystalline structure in low density polyethylene (LDPE) blended with high density polyethylene (HDPE)

Polymer international, 2005-02, Vol.54 (2), p.465-470

2005

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Hundred-watt Level Spectral Beam Combining Diode Laser Source Based on Mini-Bar Stack

Guangxué xuébào, 2015-11, Vol.35 (11), p.1114002

2015

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Space charge distribution and crystalline structure in polyethylene blended with EVOH

European polymer journal, 2004-08, Vol.40 (8), p.1987-1995

2004

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Investigation of the gain match in high brightness 980 nm tapered diode laser

Journal of luminescence, 2023-05, Vol.257, p.119644, Article 119644

2023

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High Refractive Index Films Prepared from Titanium Chloride and Methyl Methacrylate via a Non-Aqueous Sol–Gel Route

Journal of sol-gel science and technology, 2005-06, Vol.34 (3), p.227-231

2005

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High-power direct diode laser output by spectral beam combining

Laser physics, 2018-03, Vol.28 (3), p.35802

2018

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Scaling the spectral beam combining channel by multiple diode laser stacks in an external cavity

Laser physics letters, 2017-04, Vol.14 (4), p.45811

2017

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基于二向色镜密集光谱合束的高亮度半导体激光研究

Zhōngguó jīguāng, 2022, Vol.49 (9), p.901001

2022

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高亮度半导体激光尾纤模块中光学补偿方法

Zhōngguó jīguāng, 2021, Vol.48 (11), p.1101003

2021

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The high vacuum cleaving facet coating passivation characteristic of laser diode

2015 International Conference on Optoelectronics and Microelectronics (ICOM), 2015, p.55-57

2015

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Large-telescope primary mirror coating technology

Qiang ji guang yu li zi shu, 2012, Vol.24 (2), p.365-369

2012

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Suppression of higher-order modes in a large-optical-cavity waveguide structure for high-power high-efficiency 976-nm diode lasers

Superlattices and microstructures, 2019-05, Vol.129, p.40-46

2019

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Simulation on the slab-coupled optical waveguide laser

2015 International Conference on Optoelectronics and Microelectronics (ICOM), 2015, p.493-495

2015

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Erratum: “Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. 121, 172102 (2022)]

Applied physics letters, 2024-01, Vol.124 (3)

2024

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Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure

Applied physics letters, 2022-10, Vol.121 (17)

2022

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Effects of opening design of gas distribution plate on fluidization of the synthesis process of organosilicon monomer

Korean Journal of Chemical Engineering, 2022, 39(8), 269, pp.2034-2043

2022

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Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Applied physics letters, 2023-04, Vol.122 (15)

2023

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Sulfonium‐Cations‐Assisted Intermediate Engineering for Quasi‐2D Perovskite Solar Cells

Advanced materials (Weinheim), 2023-02, Vol.35 (5), p.e2207345-n/a

2023

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High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications

IEEE electron device letters, 2023-06, Vol.44 (6), p.911-914

2023

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Development of in Planta Chemical Cross-Linking-Based Quantitative Interactomics in Arabidopsis

Journal of proteome research, 2018-09, Vol.17 (9), p.3195-3213

2018

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High-brightness spectral beam combining of diode laser array stack in an external cavity

Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting

Spectral Bandwidth Narrowing of High Brightness Spectral Beam Combining Diode Laser

Poly(methyl methacrylate)/silica/titania ternary nanocomposites with greatly improved thermal and ultraviolet-shielding properties

Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers

Space charge distribution and crystalline structure in low density polyethylene (LDPE) blended with high density polyethylene (HDPE)

Hundred-watt Level Spectral Beam Combining Diode Laser Source Based on Mini-Bar Stack

Space charge distribution and crystalline structure in polyethylene blended with EVOH

Investigation of the gain match in high brightness 980 nm tapered diode laser

High Refractive Index Films Prepared from Titanium Chloride and Methyl Methacrylate via a Non-Aqueous Sol–Gel Route

High-power direct diode laser output by spectral beam combining

Scaling the spectral beam combining channel by multiple diode laser stacks in an external cavity

基于二向色镜密集光谱合束的高亮度半导体激光研究

高亮度半导体激光尾纤模块中光学补偿方法

The high vacuum cleaving facet coating passivation characteristic of laser diode

Large-telescope primary mirror coating technology

Suppression of higher-order modes in a large-optical-cavity waveguide structure for high-power high-efficiency 976-nm diode lasers

Simulation on the slab-coupled optical waveguide laser

Erratum: “Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. 121, 172102 (2022)]

Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure

Effects of opening design of gas distribution plate on fluidization of the synthesis process of organosilicon monomer

Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Sulfonium‐Cations‐Assisted Intermediate Engineering for Quasi‐2D Perovskite Solar Cells

High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications

Development of in Planta Chemical Cross-Linking-Based Quantitative Interactomics in Arabidopsis

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