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Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes

ACS nano, 2018-02, Vol.12 (2), p.1462-1472

2018

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Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Localized Surface Plasmon Enhanced All‐Inorganic Perovskite Quantum Dot Light‐Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture

Advanced functional materials, 2018-05, Vol.28 (20), p.n/a

2018

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Synergetic Effect of the Surfactant and Silica Coating on the Enhanced Emission and Stability of Perovskite Quantum Dots for Anticounterfeiting

ACS applied materials & interfaces, 2019-08, Vol.11 (31), p.28013-28022

2019

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Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Applied physics letters, 2018-04, Vol.112 (15)

2018

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Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

Applied physics letters, 2014-03, Vol.104 (13)

2014

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Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

Applied physics letters, 2016-02, Vol.108 (6)

2016

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Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

Journal of luminescence, 2017-06, Vol.186, p.243-246

2017

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A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

Symmetry (Basel), 2022-08, Vol.14 (8), p.1721

2022

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Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Journal of materials science. Materials in electronics, 2017-10, Vol.28 (19), p.14341-14347

2017

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Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Journal of alloys and compounds, 2018-01, Vol.731, p.243-247

2018

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Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

Journal of physics. D, Applied physics, 2016-03, Vol.49 (14), p.145104-145108

2016

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Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

Applied physics letters, 2014-08, Vol.105 (6)

2014

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UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure

Journal of luminescence, 2017-07, Vol.187, p.428-432

2017

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Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

Optics communications, 2015-02, Vol.336, p.1-4

2015

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High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

Applied physics letters, 2013-07, Vol.103 (2), p.21109

2013

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A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Materials science in semiconductor processing, 2015-11, Vol.39, p.582-586

2015

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Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Applied surface science, 2016-01, Vol.360, p.772-776

2016

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Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

Applied physics letters, 2013-04, Vol.102 (16)

2013

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p-Type NiZnO thin films grown by photo-assist metal–organic chemical vapor deposition

Journal of alloys and compounds, 2013-12, Vol.579, p.160-164

2013

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High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1423-1429

2012

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Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

Applied surface science, 2014-03, Vol.295, p.26-30

2014

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High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure

Nano letters, 2017-01, Vol.17 (1), p.313-321

2017

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Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

Journal of luminescence, 2014-10, Vol.154, p.587-592

2014

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Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Applied physics. A, Materials science & processing, 2014-09, Vol.116 (4), p.1561-1566

2014

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Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes

Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

Localized Surface Plasmon Enhanced All‐Inorganic Perovskite Quantum Dot Light‐Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture

Synergetic Effect of the Surfactant and Silica Coating on the Enhanced Emission and Stability of Perovskite Quantum Dots for Anticounterfeiting

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure

Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

p-Type NiZnO thin films grown by photo-assist metal–organic chemical vapor deposition

High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure

Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

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