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Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

Nanoscale, 2016, Vol.8 (19), p.9997-10003

2016

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Silica coating enhances the stability of inorganic perovskite nanocrystals for efficient and stable down-conversion in white light-emitting devices

Nanoscale, 2018-11, Vol.10 (43), p.20131-20139

2018

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High-efficiency and air-stable photodetectors based on lead-free double perovskite Cs2AgBiBr6 thin films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (3), p.7982-7988

2018

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High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

Nanoscale, 2016-05, Vol.8 (19), p.135-142

2016

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A (4,6)-c copper–organic framework constructed from triazole-inserted dicarboxylate linker with CO2 selective adsorption

CrystEngComm, 2024-02, Vol.26 (9), p.1204-1208

2024

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Polynuclear Rare-Earth Cluster-Directed Self-Assembly of Highly Porous Zeolite-like Metal–Organic Frameworks with Methane Storage Property

Inorganic chemistry, 2023-11, Vol.62 (44), p.18014-18019

2023

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Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7), p.70307

2018

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ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD

Chinese physics letters, 2010-12, Vol.27 (12), p.128504

2010

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Near-infrared random lasing realized in a perovskite CH3NH3PbI3 thin film

Journal of materials chemistry. C, Materials for optical and electronic devices, 2016-01, Vol.4 (36), p.8373-8379

2016

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Electrically Pumped Ultraviolet Random Lasing from p-ZnO：As Based on p-ZnO/N-GaN Heterojunction

Chinese physics letters, 2014-05, Vol.31 (5), p.179-182

张源涛夏晓川伍斌史志锋杨帆杨小天张宝林杜国同

2014

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Properties of p-NiO/n-GaN Diodes Fabricated by Magnetron Sputtering

Chinese physics letters, 2012-10, Vol.29 (10), p.107304-1-107304-3

2012

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Photoluminescence performance enhancement of ZnO/MgO heterostructured nanowires and their applications in ultraviolet laser diodes

Physical chemistry chemical physics : PCCP, 2015-06, Vol.17 (21), p.13813-13820

2015

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Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications

CrystEngComm, 2015-01, Vol.17 (1), p.40-49

2015

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Study on high-temperature and high-pressure measurement by using metal-coated FBG

Microwave and optical technology letters, 2008-05, Vol.50 (5), p.1138-1140

2008

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Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method

Chinese physics letters, 2011-10, Vol.28 (10), p.108101-1-108101-4, Article 108101

2011

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Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

Chinese physics letters, 2017-08, Vol.34 (9), p.97301

2017

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Crystalline, Optical and Electrical Properties of NiZnO Thin Films Fabricated by MOCVD

Chinese physics letters, 2011-07, Vol.28 (7), p.77301-1-077301-4

2011

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The growth of ZnO on stainless steel foils by MOCVD and its application in light emitting devices

Physical chemistry chemical physics : PCCP, 2016-02, Vol.18 (7), p.5614-5621

2016

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Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes

Applied physics letters, 2012-07, Vol.101 (5), p.53503

2012

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Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

Chinese physics letters, 2014-02, Vol.31 (2), p.97-100, Article 27101

王东盛张克雄梁红伟宋世巍杨德超申人升柳阳夏晓川骆英民杜国同

2014

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Effect of Au/Ni/4H–SiC Schottky junction thermal stability on performance of alpha particle detection

Chinese physics B, 2018-08, Vol.27 (8), p.87304

2018

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Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

Journal of applied physics, 2017-06, Vol.121 (23)

2017

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Excellent optical quality versus strong grain boundary effect in a double-layer ZnO structure

Semiconductor science and technology, 2016-03, Vol.31 (3), p.35012

2016

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Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

Chinese physics B, 2018-02, Vol.27 (2), p.588-593

2018

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Enhanced p-Type ZnO Films through Nitrogen and Argentum Codoping Grown by Ultrasonic Spray Pyrolysis

Chinese physics letters, 2008-09, Vol.25 (9), p.3400-3402

2008

Volltextzugriff (PDF)

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Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

Silica coating enhances the stability of inorganic perovskite nanocrystals for efficient and stable down-conversion in white light-emitting devices

High-efficiency and air-stable photodetectors based on lead-free double perovskite Cs2AgBiBr6 thin films

High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

A (4,6)-c copper–organic framework constructed from triazole-inserted dicarboxylate linker with CO2 selective adsorption

Polynuclear Rare-Earth Cluster-Directed Self-Assembly of Highly Porous Zeolite-like Metal–Organic Frameworks with Methane Storage Property

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD

Near-infrared random lasing realized in a perovskite CH3NH3PbI3 thin film

Electrically Pumped Ultraviolet Random Lasing from p-ZnO：As Based on p-ZnO/N-GaN Heterojunction

Properties of p-NiO/n-GaN Diodes Fabricated by Magnetron Sputtering

Photoluminescence performance enhancement of ZnO/MgO heterostructured nanowires and their applications in ultraviolet laser diodes

Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications

Study on high-temperature and high-pressure measurement by using metal-coated FBG

Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

Crystalline, Optical and Electrical Properties of NiZnO Thin Films Fabricated by MOCVD

The growth of ZnO on stainless steel foils by MOCVD and its application in light emitting devices

Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes

Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

Effect of Au/Ni/4H–SiC Schottky junction thermal stability on performance of alpha particle detection

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

Excellent optical quality versus strong grain boundary effect in a double-layer ZnO structure

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

Enhanced p-Type ZnO Films through Nitrogen and Argentum Codoping Grown by Ultrasonic Spray Pyrolysis

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