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Dopant Loss Mechanism in n[sup +]∕p Germanium Junctions during Rapid Thermal Annealing

Journal of the Electrochemical Society, 2005, Vol.152 (12), p.G895

2005

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Growth of Bismuth Sulfide Nanowire Using Bismuth Trisxanthate Single Source Precursors

Chemistry of materials, 2003-12, Vol.15 (24), p.4544-4554

2003

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High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing

Chinese physics B, 2020-08, Vol.29 (8), p.87303

2020

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MOVPE growth of InAs quantum dots for mid-IR applications

Transactions of Nonferrous Metals Society of China, 2006-06, Vol.16 (B01), p.25-28

2006

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Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device

Applied physics letters, 2004-06, Vol.84 (26), p.5407-5409

2004

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Formation of dual-phase HfO2–HfxSi1−xO2 dielectric and its application in memory devices

Journal of applied physics, 2005-07, Vol.98 (1)

2005

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Nonvolatile Flash memory device using Ge nanocrystals embedded in HfAlO high-κ tunneling and control oxides: Device fabrication and electrical performance

IEEE transactions on electron devices, 2004-11, Vol.51 (11), p.1840-1848

2004

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High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processingProject supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4202078)and the National Key Project of Science and Technology of China (Grant No. 2017ZX02315001-002)

Chinese physics B, 2020-08, Vol.29 (8)

2020

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The Analysis of Dielectric Breakdown in Cu/Low-k Interconnect System

2006 European Solid-State Device Research Conference, 2006, p.399-402

2006

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Magnetic field control of ferroelectric polarization and magnetization of LiCu2O2 compound

中国物理B：英文版, 2014-08 (8), p.89-94

Qi Yan Du An

2014

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Schottky barrier tuning at NiSi/Si interface using pre-silicide aluminum and sulfur co-implant

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010, p.1021-1023

2010

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Carbon metal composite film deposited using novel Filtered Cathodic Vacuum Arc technique

2011 IEEE 61st Electronic Components and Technology Conference (ECTC), 2011, p.1234-1238

2011

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Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy

Applied physics letters, 2005-10, Vol.87 (18)

2005

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Effect of rapid thermal annealing on the ordering of AlInP grownby metal-organic vapor-phase epitaxy

Applied physics letters, 2005-10, Vol.87 (18), p.181906-181906-3

2005

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Formation of dual-phase Hf O 2 - Hf x Si 1 − x O 2 dielectric and its applicationin memory devices

Journal of applied physics, 2005-07, Vol.98 (1), p.013536-013536-5

2005

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Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-[kappa]tunneling and control oxides: Device fabrication and electrical performance

IEEE transactions on electron devices, 2004-11, Vol.51 (11), p.1840

2004

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Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance

IEEE transactions on electron devices, 2004-11, Vol.51 (11), p.1840-1848

2004

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Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes

Advanced materials research, 2008-01, Vol.31, p.17-19

2008

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Room-temperature continuous-wave operation of GaInNAs∕GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

Applied physics letters, 2004-08, Vol.85 (9), p.1469-1471

2004

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Sub-100 nm MOSFET fabrication with low temperature resist trimming process

Thin solid films, 2004-09, Vol.462 (Complete), p.63-66

2004

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Study of the Structural Transformation of Ge2Sb2Te5 Induced by Current Pulse in Phase Change Memory

MRS proceedings, 2003, Vol.803

2003

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Study of the Structural Transformation of Ge 2 Sb 2 Te 5 Induced by Current Pulse in Phase Change Memory

MRS proceedings, 2003, Vol.803, Article HH1.5

2003

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Deep Learning for Power System Applications: Case Studies Linking Artificial Intelligence and Power Systems

1, 2023

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EELS chemical bond characterization of process induced damages in low-k dielectric films

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2012, p.1-5

2012

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Damage distribution and annealing behaviour of high-energy 115In+ implanted into Si(100)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1990-03, Vol.48 (1-4), p.425-430

1990

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Dopant Loss Mechanism in n[sup +]∕p Germanium Junctions during Rapid Thermal Annealing

Growth of Bismuth Sulfide Nanowire Using Bismuth Trisxanthate Single Source Precursors

High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing

MOVPE growth of InAs quantum dots for mid-IR applications

Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device

Formation of dual-phase HfO2–HfxSi1−xO2 dielectric and its application in memory devices

Nonvolatile Flash memory device using Ge nanocrystals embedded in HfAlO high-κ tunneling and control oxides: Device fabrication and electrical performance

The Analysis of Dielectric Breakdown in Cu/Low-k Interconnect System

Magnetic field control of ferroelectric polarization and magnetization of LiCu2O2 compound

Schottky barrier tuning at NiSi/Si interface using pre-silicide aluminum and sulfur co-implant

Carbon metal composite film deposited using novel Filtered Cathodic Vacuum Arc technique

Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy

Effect of rapid thermal annealing on the ordering of AlInP grownby metal-organic vapor-phase epitaxy

Formation of dual-phase Hf O 2 - Hf x Si 1 − x O 2 dielectric and its applicationin memory devices

Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-[kappa]tunneling and control oxides: Device fabrication and electrical performance

Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance

Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes

Room-temperature continuous-wave operation of GaInNAs∕GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

Sub-100 nm MOSFET fabrication with low temperature resist trimming process

Study of the Structural Transformation of Ge2Sb2Te5 Induced by Current Pulse in Phase Change Memory

Study of the Structural Transformation of Ge 2 Sb 2 Te 5 Induced by Current Pulse in Phase Change Memory

Deep Learning for Power System Applications: Case Studies Linking Artificial Intelligence and Power Systems

EELS chemical bond characterization of process induced damages in low-k dielectric films

Damage distribution and annealing behaviour of high-energy 115In+ implanted into Si(100)

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